Author: S. R. Stock
Publisher:
ISBN:
Category :
Languages : en
Pages : 37
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Book Description
X-ray diffraction topography offers unique advantages for imaging dislocations and accumulated plastic deformation in single crystals. X-ray diffraction is much more sensitive to strains and samples larger volumes of material than does electron microscopy. Also, topography can be used non-destructively to examine a single specimen many times during the course of an experiment. With the advent of synchrotron radiation sources and of rapid imaging systems for laboratory sources, the emphasis in applying x-ray topography is shifting from characterization studies to dynamic, in-situ observation of experiments. One such application is observation of plastic deformation during tensile or bending tests. An x-ray topographic method is described for measuring the magnitude of the components of the strain tensor as a function of position in single crystal specimens. Several variants of the technique are described for use with monochromatic or white x-radiation. Results are reported for some components of the deformation field surrounding a precipitate of beta-NbH. Possible applications of contour mapping are discussed.
Author: S. R. Stock
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
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Book Description
This report describes a new technique which allows the determination of strain components in solids with a spatial resolution of about 10 micrometers. The method uses x-ray topography and may be applied to specimens which have relatively high dislocation contents. The technique may be used for thin specimens as well as relatively thick ones. (Author).
Author: Sigmund Weissmann
Publisher: Springer
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 560
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 692
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Book Description
Author: D.K. Bowen
Publisher: CRC Press
ISBN: 0203979192
Category : Technology & Engineering
Languages : en
Pages : 263
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Book Description
The rapid growth in the applications of electronic materials has created an increasing demand for reliable techniques for examining and characterizing these materials. This book explores the area of x-ray diffraction and the techniques available for deployment in research, development, and production. It maps the theoretical and practical background necessary to study single crystal materials using high resolution x-ray diffraction and topography. It combines mathematical formalism with graphical explanations and hands-on advice for interpreting data, thus providing the theoretical and practical background for applying these techniques in scientific and industrial materials characterization
Author: V.L. Indenbom
Publisher: Elsevier
ISBN: 0444600426
Category : Science
Languages : en
Pages : 793
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Book Description
This volume aims to provide a thorough treatment of the phenomena of elastic anisostropy and a discussion on dislocation mobilities. The book presents a wide treatment of these topics, and includes descriptions of detailed theoretical models to describe dislocations and cracks, and moving dislocations. An overview is given of the physical behaviour resulting from dislocation mobility in materials, such as glide and climb, interactions with point defects and the behaviour of dislocations under radiation such as creep and swelling.
Author: Kazuhiko Itagaki
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 24
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Book Description
Author:
Publisher: Elsevier
ISBN: 0080472540
Category : Technology & Engineering
Languages : en
Pages : 603
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Book Description
This is the first volume to appear under the joint editorship of J.P. Hirth and F.R.N. Nabarro. While Volume 11 concentrated on the single topic of dislocations and work hardening, the present volume spreads over the whole range of the study of dislocations from the application by Kléman and his colleagues of homotopy theory to classifying the line and point defects of mesomorphic phases to Chaudhri's account of the experimental observations of dislocations formed around indentations.Chapter 64, by Cai, Bulatove, Chang, Li and Yip, discusses the influence of the structure of the core of a dislocation on its mobility. The power of modern computation allows this topic to be treated from the first principles of electron theory, and with empirical potentials for more complicated problems. Advances in electron microscopy allow these theoretical predictions to be tested.In Chapter 65, Xu analyzes the emission of dislocations from the tip of a crack and its influence on the brittle to ductile transition. Again, the treatment is predominantly theoretical, but it is consistently related to the very practical example of alpha iron.In a dazzling interplay of experiment and abstract mathematics, Kléman, Lavrentovich and Nastishin analyze the line and point structural defects of the many mesomorphic phases which have become known in recent years.Chapter 67, by Coupeau, Girard and Rabier, is essentially experimental. It shows how the various modern techniques of scanning probe microscopy can be used to study dislocations and their interaction with the free surface.Chapter 68, by Mitchell and Heuer, considers the complex dislocations that can form in ceramic crystals on the basis of observations by transmission electron microscopy and presents mechanistic models for the motion of the dislocations in various temperature regimes.While the underlying aim of the study of dislocations in energetic crystals by Armstrong and Elban in Chapter 69 is to understand the role of dislocations in the process of detonation, it has the wider interest of studying dislocations in molecular crystals which are ``elastically soft, plastically hard, and brittle''.Chaudhri in Chapter 70 discusses the role of dislocations in indentation processes, largely on the basis of the elastic analysis by E.H. Yoffe. The special case of nanoindentations is treated only briefly.
Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217779
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Author: C.K Maiti
Publisher: CRC Press
ISBN: 1420012347
Category : Science
Languages : en
Pages : 438
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Book Description
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
