Silicon Quantum Dots in a Metal-oxide-semiconductor Structure PDF Download
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Author: Maroun G. Khoury
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 418
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Book Description
Author: Maroun G. Khoury
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 418
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Book Description
Author: Allen David Gunther
Publisher:
ISBN:
Category : Quantum dots
Languages : en
Pages : 398
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Book Description
Herein, a program of research is detailed related to transport through the Si metal oxide semiconductor (MOS) quantum dots fabricated in a process flow compatible with modern ULSI (ultra large scale integrated circuit). Silicon quantum dots were fabricated by placing split gates within a MOSFET structure. Quantum dots of several sizes and geometries were fabricated by this process for the purpose of investigating the effects of size and shape on quantized transport through the dots. The transport properties of the different quantum dot sizes and shapes were investigated at low temperatures, and compared to normal MOSFETs fabricated by the same technology. Equilibrium measurements with the device biased in the regime from the onset of weak inversion to just past the onset of strong inversion revealed strongly oscillatory behavior in the tunneling conductance. The conductance peaks appear to map an energy level spectrum in the dot as the inversion and depletion gates are separately swept. Symmetric devices, biased both symmetrically and asymmetrically, show two groups of "branches" which evolve with different slopes in the V[subscript Inv]-V[subscript Depl] plane. An asymmetric device studied shows three groups of branches. In addition, a fine structure is observed in the conductance peak behavior of two devices. This apparent energy level structure is compared to the body of literature on the so-called artificial atoms, as well as self-consistent three dimensional quantum mechanical solutions for the energy levels in the same dot structure, which qualitatively agree with the overall slope of the observed data. However, the calculations reveal only the multiple sets of slopes when asymmetrically biased. These multiple slopes are postulated to arise due to the splitting of the degenerate states of the symmetric structure as the bias makes the structure increasingly asymmetric. Finally, a simplified model is presented which shows how slight asymmetry in the dot confining potential can give rise to both a fine structure and multiple slopes in the branches, and several alternative mechanisms are presented to explain the origin of the fine structure observed.
Author: Hong Pan
Publisher:
ISBN:
Category :
Languages : en
Pages : 152
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Book Description
With the rapid progress in nanofabrication, scientists and researchers are now able to make lateral quantum dots in semiconductor materials. The few electrons confined in these quantum dots provide the possibility of realizing a qubit, the building block of a quantum computer. Tremendous effort has been put in the solid state quantum information field in the last ten years of making single electron spin qubit or singlet triplet qubit based on two electron spin. However, the operation of these types of qubit requires additional engineering by either integrating a microwave loop or an external magnet to creat field difference. This thesis project was inspired by DiVincenzo's proposal of developing qubit based on three electrons controlled by Heisenberg exchange interactions only, which is called "exchange-only" qubit. All the qubit operation can be done in principle via electrical pulses only. We proposed to make the triple quantum device in silicon system. This type of device will have small qubit decoherence, easy integration to industry infrustructure and great chance of scaling up to a real quantum computer. We developed and fabricated the electrostatically defined triple quantum dot (TQD) device in a silicon metal-oxide-oxide structure. We characterized its electrostatic properties using a quantum point contact charge sensing channel nearby. We are be able to obtain the charge stability diagram in the last few elelctron regime that provides the experimental basis of forming a exchange only qubit. We demonstrated the tunability of the TQD by acheiving the quadruple points where all three dots are on resonance. This is the first experimental demonstration of well controlled triple quantum dot device in silicon system. The constant interaction model and the hubbard model for triple quantum dot system are developed to help understand the electrostatic dynamics. Tunnel couplings between quantum dots, which determines the exchange interactions, are extracted using various fitting methods. We implemented the qubit manipulation with three quantum dots in both a linearly and a triangularly arranged geometry. For the first time, we observed coherent oscillation in the Si MOS based triple quantum dot device with oscillation frequency of 2MHz and 7MHz. We suspect the these oscillations are related with spin dynamics in our system. These experimental investigations demonstrate that we have the ability to develop triple quantum dot device for exchange ony qubit and the potential to perform qubit operation in the future.
Author: V.Alexander Stefan (Editor-in-Chief)
Publisher: Stefan University Press
ISBN: 9781889545400
Category :
Languages : en
Pages : 100
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Book Description
Author: Shunri Oda
Publisher: CRC Press
ISBN: 1420028642
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology. Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon. Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them. In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in
Author: Frank Boehm
Publisher: CRC Press
ISBN: 1439863237
Category : Medical
Languages : en
Pages : 746
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Book Description
Nanomedical Device and Systems Design: Challenges, Possibilities, Visions serves as a preliminary guide toward the inspiration of specific investigative pathways that may lead to meaningful discourse and significant advances in nanomedicine/nanotechnology. This volume considers the potential of future innovations that will involve nanomedical devic
Author: Ameenah Al-Ahmadi
Publisher: BoD – Books on Demand
ISBN: 9535104837
Category : Science
Languages : en
Pages : 294
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Book Description
The book “Quantum dots: A variety of a new applications” provides some collections of practical applications of quantum dots. This book is divided into four sections. In section 1 a review of the thermo-optical characterization of CdSe/ZnS core-shell nanocrystal solutions was performed. The Thermal Lens (TL) technique was used, and the thermal self-phase Modulation (TSPM) technique was adopted as the simplest alternative method. Section 2 includes five chapters where novel optical and lasing application are discussed. In section 3 four examples of quantum dot system for different applications in electronics are given. Section 4 provides three examples of using quantum dot system for biological applications. This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Biology, Material Science, Medicine with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems.
Author: Shunri Oda
Publisher: CRC Press
ISBN: 1482228688
Category : Technology & Engineering
Languages : en
Pages : 288
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Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Author: S. Hall
Publisher: Springer Science & Business Media
ISBN: 1402063784
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: Thomas Ihn
Publisher: Springer
ISBN: 0387218289
Category : Science
Languages : en
Pages : 270
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Book Description
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
