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Author: Navinder Singh
Publisher: CRC Press
ISBN: 131535196X
Category : Science
Languages : en
Pages : 110
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Book Description
Maintaining a practical perspective, Electronic Transport Theories: From Weakly to Strongly Correlated Materials provides an integrative overview and comprehensive coverage of electronic transport with pedagogy in view. It covers traditional theories, such as the Boltzmann transport equation and the Kubo formula, along with recent theories of transport in strongly correlated materials. The understood case of electronic transport in metals is treated first, and then transport issues in strange metals are reviewed. Topics discussed are: the Drude-Lorentz theory; the traditional Bloch-Boltzmann theory and the Grüneisen formula; the Nyquist theorem and its formulation by Callen and Welton; the Kubo formalism; the Langevin equation approach; the Wölfle-Götze memory function formalism; the Kohn-Luttinger theory of transport; and some recent theories dealing with strange metals. This book is an invaluable resource for undergraduate students, post-graduate students, and researchers with a background in quantum mechanics, statistical mechanics, and mathematical methods.
Author: Navinder Singh
Publisher: CRC Press
ISBN: 131535196X
Category : Science
Languages : en
Pages : 110
Get Book Here
Book Description
Maintaining a practical perspective, Electronic Transport Theories: From Weakly to Strongly Correlated Materials provides an integrative overview and comprehensive coverage of electronic transport with pedagogy in view. It covers traditional theories, such as the Boltzmann transport equation and the Kubo formula, along with recent theories of transport in strongly correlated materials. The understood case of electronic transport in metals is treated first, and then transport issues in strange metals are reviewed. Topics discussed are: the Drude-Lorentz theory; the traditional Bloch-Boltzmann theory and the Grüneisen formula; the Nyquist theorem and its formulation by Callen and Welton; the Kubo formalism; the Langevin equation approach; the Wölfle-Götze memory function formalism; the Kohn-Luttinger theory of transport; and some recent theories dealing with strange metals. This book is an invaluable resource for undergraduate students, post-graduate students, and researchers with a background in quantum mechanics, statistical mechanics, and mathematical methods.
Author: Zhigang Shuai
Publisher: Springer Science & Business Media
ISBN: 3642250769
Category : Science
Languages : en
Pages : 96
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Book Description
Mechanism of charge transport in organic solids has been an issue of intensive interests and debates for over 50 years, not only because of the applications in printing electronics, but also because of the great challenges in understanding the electronic processes in complex systems. With the fast developments of both electronic structure theory and the computational technology, the dream of predicting the charge mobility is now gradually becoming a reality. This volume describes recent progresses in Prof. Shuai’s group in developing computational tools to assess the intrinsic carrier mobility for organic and carbon materials at the first-principles level. According to the electron-phonon coupling strength, the charge transport mechanism is classified into three different categories, namely, the localized hopping model, the extended band model, and the polaron model. For each of them, a corresponding theoretical approach is developed and implemented into typical examples.
Author: Carlo Jacoboni
Publisher: Springer
ISBN: 9783642105876
Category : Science
Languages : en
Pages : 590
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Book Description
This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.
Author: Supriyo Datta
Publisher: Cambridge University Press
ISBN: 1139643010
Category : Science
Languages : en
Pages : 398
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Book Description
Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.
Author: Eckehard Schöll
Publisher: Springer Science & Business Media
ISBN: 1461558077
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author: Dmitry Ryndyk
Publisher: Springer
ISBN: 3319240889
Category : Science
Languages : en
Pages : 251
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Book Description
This book is an introduction to a rapidly developing field of modern theoretical physics – the theory of quantum transport at nanoscale. The theoretical methods considered in the book are in the basis of our understanding of charge, spin and heat transport in nanostructures and nanostructured materials and are widely used in nanoelectronics, molecular electronics, spin-dependent electronics (spintronics) and bio-electronics. The book is based on lectures for graduate and post-graduate students at the University of Regensburg and the Technische Universität Dresden (TU Dresden). The first part is devoted to the basic concepts of quantum transport: Landauer-Büttiker method and matrix Green function formalism for coherent transport, Tunneling (Transfer) Hamiltonian and master equation methods for tunneling, Coulomb blockade, vibrons and polarons. The results in this part are obtained as possible without sophisticated techniques, such as nonequilibrium Green functions, which are considered in detail in the second part. A general introduction into the nonequilibrium Green function theory is given. The approach based on the equation-of-motion technique, as well as more sophisticated one based on the Dyson-Keldysh diagrammatic technique are presented. The main attention is paid to the theoretical methods able to describe the nonequilibrium (at finite voltage) electron transport through interacting nanosystems, specifically the correlation effects due to electron-electron and electron-vibron interactions.
Author: Massimiliano Di Ventra
Publisher: Cambridge University Press
ISBN: 1139475029
Category : Science
Languages : en
Pages : 477
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Book Description
In recent years there has been a huge increase in the research and development of nanoscale science and technology. Central to the understanding of the properties of nanoscale structures is the modeling of electronic conduction through these systems. This graduate textbook provides an in-depth description of the transport phenomena relevant to systems of nanoscale dimensions. In this textbook the different theoretical approaches are critically discussed, with emphasis on their basic assumptions and approximations. The book also covers information content in the measurement of currents, the role of initial conditions in establishing a steady state, and the modern use of density-functional theory. Topics are introduced by simple physical arguments, with particular attention to the non-equilibrium statistical nature of electrical conduction, and followed by a detailed formal derivation. This textbook is ideal for graduate students in physics, chemistry, and electrical engineering.
Author: J.M. Ziman
Publisher: Oxford University Press
ISBN: 9780198507796
Category : Science
Languages : en
Pages : 572
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Book Description
This is a classic text of its time in condensed matter physics.
Author: Uichiro Mizutani
Publisher: Cambridge University Press
ISBN: 9780521587099
Category : Science
Languages : en
Pages : 610
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Book Description
Electron theory of metals textbook for advanced undergraduate students of condensed-matter physics and related disciplines.
Author: Massimo V. Fischetti
Publisher: Springer
ISBN: 3319011014
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
