Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004 PDF full book. Access full book title Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004 by R. J. Carter. Download full books in PDF and EPUB format.
Author: R. J. Carter
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Get Book Here
Book Description
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Author: R. J. Carter
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Get Book Here
Book Description
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Author:
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 440
Get Book Here
Book Description
Author: G. S. Oehrlein
Publisher: Cambridge University Press
ISBN: 9781107413153
Category : Technology & Engineering
Languages : en
Pages : 614
Get Book Here
Book Description
This book highlights important achievements and challenges in advanced interconnects and low-k dielectrics as employed in the microelectronics industry. The replacement of Al alloys with Cu along with the introduction of new barrier materials to protect Cu from chemical attack, and the utilization of new dielectric materials with a lower relative dielectric constant k than SiO2 in multilevel metallization structures of increasing complexity, are the major themes of evolution in this field. Invited reviews illustrate the significant progress that has been achieved as well as the challenges that remain. Contributed papers presented by researchers from different countries demonstrate progress on current topics using a truly multidisciplinary approach.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 544
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 624
Get Book Here
Book Description
Author:
Publisher:
ISBN: 9781558996502
Category : Dielectric films
Languages : en
Pages : 107
Get Book Here
Book Description
Author: Ting Y. Tsui
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 498
Get Book Here
Book Description
Author: Paul R. Besser
Publisher: Cambridge University Press
ISBN: 9781107408982
Category : Technology & Engineering
Languages : en
Pages : 430
Get Book Here
Book Description
This book, first published in 2005, brings together leading modelers and experimentalists to discuss the plethora of process and reliability issues associated with depositing, characterizing and integrating novel and existing barriers, metals and ultralow-k dielectrics into reliable high-performance interconnects that can be robustly packaged. Section I focuses on low-k dielectric integration. Manuscripts highlight the importance of interface integrity and adhesion, the issue of process-induced dielectric damage and the need for pore sealing methods for low-k films. Channel cracking is addressed by several contributions. Cu metallization and barrier challenges are discussed in a section on metallization. Mechanical stress is highlighted in a reliability section. Contributions here provide a fundamental understanding of the issues of stress and stress relaxation in Cu films and lines encapsulated in low-k dielectrics. Presentations on electromigration, leakage and time-dependent dielectric breakdown, as well as thermal and mechanical fatigue, are also featured.
Author: Tapan Gupta
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433
Get Book Here
Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
Get Book Here
Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
