High Linearity Modulation in Quantum Wells for Analog Fiber Optic Links PDF Download
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Author: Paul K. L. Yu
Publisher:
ISBN:
Category : Fiber optics
Languages : en
Pages : 33
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Book Description
For many RF photonic applications, low RF insertion loss, large spurious free dynamic range (SH)R) links are needed. This development program demonstrated a high saturation power (46 mW), high RF efficiency ( -17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation. This was achieved with 43 mW optical power incident to the modulator. The modulator was operated with a multi-octave SFDR of 106 dB-Hz (2/3), and a single octave SH)R of 124 dB-Hz (4/5). Also introduced is a novel, dual function operation concept for the semiconductor electroabsorption modulator for operating also as an effective photodetector. The photodetector can handle more than 20 mA of photocurrent. The behavior of a waveguide modulator based upon FKE and Quantum Confined Stark Effect to achieve high linearity modulation was also modeled and documented. A first time demonstration of high quality, strain compensated multiple quantum well InGaP/InAsP materials was accomplished. Up to one micrometer thick strained multiple quantum well regions can be grown without degradation in the optical properties of the materials.
Author: Paul K. L. Yu
Publisher:
ISBN:
Category : Fiber optics
Languages : en
Pages : 33
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Book Description
For many RF photonic applications, low RF insertion loss, large spurious free dynamic range (SH)R) links are needed. This development program demonstrated a high saturation power (46 mW), high RF efficiency ( -17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation. This was achieved with 43 mW optical power incident to the modulator. The modulator was operated with a multi-octave SFDR of 106 dB-Hz (2/3), and a single octave SH)R of 124 dB-Hz (4/5). Also introduced is a novel, dual function operation concept for the semiconductor electroabsorption modulator for operating also as an effective photodetector. The photodetector can handle more than 20 mA of photocurrent. The behavior of a waveguide modulator based upon FKE and Quantum Confined Stark Effect to achieve high linearity modulation was also modeled and documented. A first time demonstration of high quality, strain compensated multiple quantum well InGaP/InAsP materials was accomplished. Up to one micrometer thick strained multiple quantum well regions can be grown without degradation in the optical properties of the materials.
Author: Paul K. L. Yu
Publisher:
ISBN:
Category : Fiber optics
Languages : en
Pages : 0
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Book Description
For many RF photonic applications, low RF insertion loss, large spurious free dynamic range (SH)R) links are needed. This development program demonstrated a high saturation power (46 mW), high RF efficiency ( -17.8 dB) analog semiconductor waveguide modulator based upon Franz-Keldysh Effect (FKE) modulation. This was achieved with 43 mW optical power incident to the modulator. The modulator was operated with a multi-octave SFDR of 106 dB-Hz (2/3), and a single octave SH)R of 124 dB-Hz (4/5). Also introduced is a novel, dual function operation concept for the semiconductor electroabsorption modulator for operating also as an effective photodetector. The photodetector can handle more than 20 mA of photocurrent. The behavior of a waveguide modulator based upon FKE and Quantum Confined Stark Effect to achieve high linearity modulation was also modeled and documented. A first time demonstration of high quality, strain compensated multiple quantum well InGaP/InAsP materials was accomplished. Up to one micrometer thick strained multiple quantum well regions can be grown without degradation in the optical properties of the materials.
Author: William S. C. Chang
Publisher: Cambridge University Press
ISBN: 1139439685
Category : Science
Languages : en
Pages : 423
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Book Description
In many applications, radio frequency (RF) signals need to be transmitted and processed without being digitalized. Optical fiber provides a transmission medium in which RF modulated optical carriers can be transmitted and distributed with very low loss, making it more efficient and less costly than conventional electronic systems. This volume presents a review of RF photonic components, transmission systems, and signal processing examples in optical fibers from leading academic, government, and industry scientists working in this field. It also introduces the reader to various related technologies such as direct modulation of laser sources, external modulation techniques, and detectors. The text is aimed at engineers and scientists engaged in the research and development of optical fibers and analog RF applications. With an emphasis on design, performance and practical application, this book will be of particular interest to those developing systems based on this technology.
Author: Kwok-Kwong Loi
Publisher:
ISBN:
Category :
Languages : en
Pages : 376
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Author: E. L. Althouse
Publisher:
ISBN:
Category :
Languages : en
Pages : 62
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Book Description
This report discusses the use of AlGaAs lasers and LEDs as optical sources for a multimode fiber optic link that uses analog modulation. It is well known that the limited linearity of these sources makes digital modulation a preferable method to send information. However, many factors determine how a portion of aninformation transfer system is constructed or retrofitted including previous investments in associated electrical and electro optical hardware, the cost of redesigning the system architecture, and, in some instances, the difficulty in digitizing certain modulation waveforms. This report is written primarily for the fiber optic design engineer that uses analog modulation, for whatever justification, but many aspects will also be of use for those who design with the traditional digital approach.
Author: Robert B. Welstand
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
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Author: GuoLiang Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 410
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Author:
Publisher:
ISBN:
Category : Microwave devices
Languages : en
Pages : 314
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Author: Dong Kwon Kim
Publisher:
ISBN:
Category : Electrooptic devices
Languages : en
Pages :
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Book Description
Optical electroabsorption modulators (EAMs) that utilize quantum wells (QWs) are known to exhibit high modulation sensitivity, which is required for the analog optical fiber link application, compared to other types of optical modulators. QW-EAMs utilize the change of absorption coefficients that depends on the change of electric field across the QW for the optical intensity modulation. This dissertation focuses on the theoretical analysis of the optical properties of asymmetric double QWs (ADQWs) and the systematic optimization of modulation sensitivity in low-voltage EAMs that incorporate ADQWs. In this structure, the accurate calculation of excitons is especially important because the excitonic as well as the band-to-band optical transitions dominate the optical properties at the operating wavelength. The complex linear optical susceptibility was calculated within the density matrix approach in the quasi-equilibrium regime for the low excitation power and through a thorough treatment of line broadening. Transition strengths were calculated in the wavevector space, which effectively includes valence subband mixing with the warping of the subbands, excitonic mixing effects, and possible optical selection rules (e.g., light polarization, spin of excitons). The calculated transmission properties of the waveguide EAMs were almost identical to the experimental data at the device operating bias range. The mixing of excitons in ADQWs was analyzed in detail in momentum space, which was demonstrated to be very important in the process of structural optimization of ADQWs. The optimization of the structural parameters revealed that at an adequate barrier position and well width, the barrier thickness affects the modulation efficiency the most. Subsequently, in InGaAsP-based waveguide type QW-EAMs that operate at 1550 nm, the optimization of only one variable the thickness of the coupling barrier of the ADQWs shows 380 % enhancement in the modulation sensitivity at a much lower bias field (70->35 kV/cm) compared with that of single-QW structures. This enhancement is found to be caused by the strong mixing of the two exciton states originating in different subband pairs.
Author: Joachim Piprek
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
