Fundamentals of III-V Semiconductor MOSFETs PDF Download
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Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: Olof Engström
Publisher: Cambridge University Press
ISBN: 1107005930
Category : Science
Languages : en
Pages : 369
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Book Description
A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Author: Raivo Jaaniso
Publisher: Woodhead Publishing
ISBN: 0081025602
Category : Technology & Engineering
Languages : en
Pages : 512
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Book Description
Semiconductor Gas Sensors, Second Edition, summarizes recent research on basic principles, new materials and emerging technologies in this essential field. Chapters cover the foundation of the underlying principles and sensing mechanisms of gas sensors, include expanded content on gas sensing characteristics, such as response, sensitivity and cross-sensitivity, present an overview of the nanomaterials utilized for gas sensing, and review the latest applications for semiconductor gas sensors, including environmental monitoring, indoor monitoring, medical applications, CMOS integration and chemical warfare agents. This second edition has been completely updated, thus ensuring it reflects current literature and the latest materials systems and applications. - Includes an overview of key applications, with new chapters on indoor monitoring and medical applications - Reviews developments in gas sensors and sensing methods, including an expanded section on gas sensor theory - Discusses the use of nanomaterials in gas sensing, with new chapters on single-layer graphene sensors, graphene oxide sensors, printed sensors, and much more
Author: Satishchandra Balkrishna Ogale
Publisher: John Wiley & Sons
ISBN: 3527654887
Category : Technology & Engineering
Languages : en
Pages : 478
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Book Description
Functional oxides are used both as insulators and metallic conductors in key applications across all industrial sectors. This makes them attractive candidates in modern technology ? they make solar cells cheaper, computers more efficient and medical instrumentation more sensitive. Based on recent research, experts in the field describe novel materials, their properties and applications for energy systems, semiconductors, electronics, catalysts and thin films. This monograph is divided into 6 parts which allows the reader to find their topic of interest quickly and efficiently. * Magnetic Oxides * Dopants, Defects and Ferromagnetism in Metal Oxides * Ferroelectrics * Multiferroics * Interfaces and Magnetism * Devices and Applications This book is a valuable asset to materials scientists, solid state chemists, solid state physicists, as well as engineers in the electric and automotive industries.
Author:
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, offers scientific and technological information on ferroelectric thin films from an international mix of academia, industry and government organizations.
Author: Lynda Soderholm
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 304
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Book Description
Actinides are an important, if sometimes unwanted, part of highly technological societies. Actinides pose an extreme scientific challenge to the materials research community. Their complex electronic structure results in many abnormal properties that even today are not well understood. The focus of this book is fundamental actinide science and its role in resolving technical challenges posed by actinide materials. Both basic and applied experimental approaches, as well as theoretical modeling and computational simulations, are featured. Topics for the inaugural actinides symposium include: actinide phase stability, transformations and aging; phononic and electronic structure; actinides and the environment; actinide solution and interfacial chemistry; actinide science and technology; theory of actinides - elemental phases, alloys and compounds; and superconductivity, correlated behavior and quantum criticality.
Author: G. S. Nolas
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 498
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Book Description
The measure of a thermoelectric material is given by the material's figure of merit. For over three decades the best thermoelectric materials had a ZT = 1. Recently, however, there are reports of new methods of materials synthesis that result in improvements beyond this performance. In addition, rapid characterization, as well as faster theoretical modeling of thermoelectric materials, has resulted in a more rapid evaluation of new materials. This book offers a look at these results and provides a benchmark for the current state in the field of thermoelectric materials research and development. The focus is on new and innovative directions that will lead to the next generation thermoelectric materials for small-scale refrigeration and power generation applications. The book emphasizes the multidisciplinary nature of the research needed to advance the science and technology of the field. Both theoretical and experimental studies are featured. Topics include: low-dimensional systems and nanocomposites; devices; oxides; skutterudites; complex bulk materials and measurements; novel approaches; and thermoelectric materials and technology.
Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
ISBN: 146149320X
Category : Technology & Engineering
Languages : en
Pages : 284
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Book Description
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Author:
Publisher: Goyal Brothers Prakashan
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 234
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Book Description
Fundamentals of Information Technology for Class 9 Teacher Resource Book (Academic Year 2023-24)
Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
ISBN: 1402030789
Category : Science
Languages : en
Pages : 477
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Book Description
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
