Fabrication and Characterization of Antimonide Based Near Infrared Photodetectors PDF Download
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Author: Vinay Bhagwat
Publisher:
ISBN: 9780542106477
Category :
Languages : en
Pages : 165
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Author: Vinay Bhagwat
Publisher:
ISBN: 9780542106477
Category :
Languages : en
Pages : 165
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Book Description
Author: Pham Huynh Tram
Publisher:
ISBN: 9781621009405
Category : Infrared spectra
Languages : en
Pages : 0
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Book Description
Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.
Author: Dan Mihai Buca
Publisher:
ISBN:
Category :
Languages : en
Pages : 100
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Author: Pham Huynh Tram
Publisher: Nova Science Publishers
ISBN: 9781621009726
Category : Electronic books
Languages : en
Pages : 150
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Book Description
Presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.
Author: Erick John Michel
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 764
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Book Description
Author: Daniel Y. Zuo
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.
Author: Janet L. Pan
Publisher:
ISBN:
Category :
Languages : en
Pages : 147
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Book Description
Author: Janet L. Pan
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Qi Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 82
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Book Description
