Characterization of Homoepitaxial Diamond Thin Films Grown by Hot Filament Assisted Chemical Vapor Deposition PDF Download
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Author: William Brock Alexander
Publisher:
ISBN:
Category :
Languages : en
Pages : 512
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Author: William Brock Alexander
Publisher:
ISBN:
Category :
Languages : en
Pages : 512
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Author: Suzette Renae Burckhard
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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Author: Quan You
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 336
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Book Description
Author: Koji Kobashi
Publisher: Elsevier
ISBN: 0080525571
Category : Science
Languages : en
Pages : 350
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Book Description
- Discusses the most advanced techniques for diamond growth - Assists diamond researchers in deciding on the most suitable process conditions - Inspires readers to devise new CVD (chemical vapor deposition Ever since the early 1980s, and the discovery of the vapour growth methods of diamond film, heteroexpitaxial growth has become one of the most important and heavily discussed topics amongst the diamond research community. Kobashi has documented such discussions with a strong focus on how diamond films can be best utilised as an industrial material, working from the premise that crystal diamond films can be made by chemical vapour disposition. Kobashi provides information on the process and characterization technologies of oriented and heteroepitaxial growth of diamond films.
Author: Sattar Mirzakuchaki
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 272
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Book Description
Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.
Author: Ashish Shrotriya
Publisher:
ISBN:
Category :
Languages : en
Pages : 166
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Author: Yijian Jin
Publisher:
ISBN:
Category :
Languages : en
Pages : 146
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Author: Zhiyong Xie
Publisher:
ISBN:
Category :
Languages : en
Pages : 172
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Book Description
Author: Ashok Kumar Dua
Publisher: Trans Tech Publications Ltd
ISBN: 3035706352
Category : Technology & Engineering
Languages : en
Pages : 110
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Book Description
Diamond, as well as being a precious gem, is a versatile material par excellence. No other material comes anywhere near to matching its properties, which are both extreme, and also expressed in rare combinations. However, natural diamonds, and those synthesised under high sandpressure temperatures, are too expensive or small for many technological applications. These limitations can be overcome by using large-area diamond coatings; chemically bonded to inexpensive non-diamond surfaces. The consequent economic advantages provide the driving force for much diamond-related research and technology.
Author: A.H. Lettington
Publisher: Springer Science & Business Media
ISBN: 9401107254
Category : Science
Languages : en
Pages : 160
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Book Description
This work, written by leading international authorities, deals with nucleation growth and processing, characterization and electrical, thermal, optical and mechanical properties of thin film diamond. The final chapters are devoted to the broad range of applications of this material.
