Physics of Semiconductor Devices PDF Download
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Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 1119429137
Category : Technology & Engineering
Languages : en
Pages : 944
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Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 1119429137
Category : Technology & Engineering
Languages : en
Pages : 944
Get Book Here
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 164490067X
Category : Technology & Engineering
Languages : en
Pages : 293
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Book Description
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
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Author: Dimitrios Kolymbas
Publisher:
ISBN: 9783549251966
Category : Rock mechanics
Languages : en
Pages : 0
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Book Description
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
ISBN: 9783211837085
Category : Computers
Languages : en
Pages : 478
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Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author: Kevin L. Jensen
Publisher: John Wiley & Sons
ISBN: 1119051894
Category : Science
Languages : en
Pages : 714
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Book Description
A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.
Author: Library of Congress
Publisher:
ISBN:
Category : Subject catalogs
Languages : en
Pages : 808
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Book Description
Author: Aritra Acharyya
Publisher: CRC Press
ISBN: 1315657910
Category : Computers
Languages : en
Pages : 568
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Book Description
The 3rd International Conference on Foundations and Frontiers in Computer, Communication and Electrical Engineering is a notable event which brings together academia, researchers, engineers and students in the fields of Electronics and Communication, Computer and Electrical Engineering making the conference a perfect platform to share experience, f
Author: Vinod Kumar Khanna
Publisher: Taylor & Francis
ISBN: 1439827133
Category : Science
Languages : en
Pages : 632
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Book Description
Bringing together widely scattered information, Nanosensors: Physical, Chemical, and Biological explores sensor development in the nanotechnology age. This easy-to-read book presents a critical appraisal of the new opportunities in the area of sensors provided by nanotechnologies and nanotechnology-enabled advancements. After introducing nanosensor classification and fundamental terms, the book outlines the properties of important nanomaterials and nanotechnologies used in nanosensor fabrication. Subsequent chapters are organized according to nanosensor type: physical (mechanical and acoustical, thermal and radiation, optical, and magnetic); chemical (atomic and molecular energies); and biological. The final chapter summarizes the current state of the field and discusses future trends. A complete and authoritative guide to nanosensors, this book offers up-to-date information on the fabrication, properties, and operating mechanisms of these fast and reliable sensors. It addresses progress in the field, fundamental issues and challenges facing researchers, and prospects for future development.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
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Book Description
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 274
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Book Description
