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Author: Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 262
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Book Description
The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
Author: Ėrazm Mikhaĭlovich Omelʹi︠a︡novskiĭ
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 262
Get Book Here
Book Description
The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642975933
Category : Technology & Engineering
Languages : en
Pages : 228
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Book Description
A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.
Author: Cor Claeys
Publisher: Springer
ISBN: 3319939254
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Author: Karl W. Böer
Publisher: Springer Nature
ISBN: 3031182863
Category : Technology & Engineering
Languages : en
Pages : 1408
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Book Description
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382639
Category : Science
Languages : en
Pages : 624
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Book Description
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Author: Mukesh Jain
Publisher: World Scientific
ISBN: 9814536830
Category :
Languages : en
Pages : 603
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Book Description
Contents: X-Ray Characterisation of II-VI Semiconductor Materials (D Gao et al.)Electronic Structure of II-VI Semiconductors and Their Alloys (S-H Wei)Radiative Recombination Processes in Rare Earth Doped II-VI Materials (M Godlewski et al.)Nonlinear Optical Properties of Heavily Doped CdS (U Neukirch)Nanostructures of Broad Gap (II,Mn) VI Semiconductors (W Heimbrodt & O Goede)Co-Based II-VI Semimagnetic Semiconductors (A Twardowski et al.)Photoluminescence and Raman Scattering of ZnSe-ZnTe Strained Layer Superlattices (K Kumazaki)Novel Electronic Processes in Mercury-Based Superlattices (J R Meyer et al.)Strain, Pressure and Piezoelectric Effects in Strained II-VI Superlattices and Heterostructures (E Anastassakia)Electronic Structures of Strained II-VI Superlattices (T Nakayama)Devices and Applications of II-VI Compounds (S Colak)Solar Cells Based on II-VI Semiconductors (H Uda)ZnSe and Its Applications for Blue-Light Laser Diodes (M Pessa & D Ahn)Molecular Beam Epitaxy of HgCdTe for Electro-Optical Infrared Applications (J M A Cortés)and other papers Readership: Condensed matter physicists and electronic engineers. keywords:
Author: Stephen J. Pearton
Publisher: CRC Press
ISBN: 1000445690
Category : Science
Languages : en
Pages : 553
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Book Description
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Author: K. A. Kikoin
Publisher: World Scientific
ISBN: 9789810218836
Category : Technology & Engineering
Languages : en
Pages : 368
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Book Description
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities. It contains brief descriptions of the experimental data available for transition metal impurities belonging to iron, palladium and platinum groups and for rare-earth impurities in elemental semiconductors (III-IV, II-VI and IV-VI compounds) and in several oxide compounds (Ti2, BaTiO3, SrTiO3). Also included are applications of the theory to the optical, electrical and resonance properties of semiconductors doped by the transition metal impurities.The book presents a theory unifying previously proposed ligand-field and band descriptions of transition metal impurities. It describes the theory in the context of the general theory of neutral impurities in semiconductors and demonstrates the capabilities of this description to explain the basic experimental properties of semiconductors doped by transition metal impurities. A detailed discussion of various experimental results and their theoretical interpretation is carried out.This book comprises three parts. The first two parts consider several exactly solvable models and describe numerical techniques. All the models and simulations constitute a general pattern describing transition metal and rare-earth impurities in semiconductors. The final part uses this theory in order to address various experimentally observed properties of these systems.
Author: Tomasz Dietl
Publisher: Academic Press
ISBN: 0080914217
Category : Technology & Engineering
Languages : en
Pages : 549
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Book Description
This new volume focuses on a new, exciting field of research: Spintronics, the area also known as spin-based electronics. The ultimate aim of researchers in this area is to develop new devices that exploit the spin of an electron instead of, or in addition to, its electronic charge. In recent years many groups worldwide have devoted huge efforts to research of spintronic materials, from their technology through characterization to modeling. The resultant explosion of papers in this field and the solid scientific results achieved justify the publication of this volume. Its goal is to summarize the current level of understanding and to highlight some key results and milestones that have been achieved to date. Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high-speed memory, logic and photonic devices. In addition, development of novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high-temperature electronics is anticipated. - Spintronics has emerged as one of the fastest growing areas of research - This text presents an in-depth examination of the most recent technological spintronic developments - Includes contributions from leading scholars and industry experts
Author: Deren Yang
Publisher: Springer
ISBN: 9783662564714
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
