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Author: Kamil A. Valiev
Publisher: Springer Science & Business Media
ISBN: 146153318X
Category : Science
Languages : en
Pages : 502
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Book Description
This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.
Author: Kamil A. Valiev
Publisher: Springer Science & Business Media
ISBN: 146153318X
Category : Science
Languages : en
Pages : 502
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Book Description
This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.
Author: K.A. Valiev
Publisher:
ISBN:
Category :
Languages : it
Pages : 0
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Book Description
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923829
Category : Technology & Engineering
Languages : en
Pages : 729
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Book Description
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Author:
Publisher:
ISBN:
Category : Photolithography
Languages : en
Pages : 0
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Book Description
Author:
Publisher:
ISBN:
Category : Photolithography
Languages : en
Pages : 179
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Book Description
Author: Ivor Brodie
Publisher: Springer Science & Business Media
ISBN: 1489921605
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
The Physical Electronics Department of SRI International (formerly Stanford Research Institute) has been pioneering the development of devices fabricated to submicron tolerances for well over 20 years. In 1961, a landmark paper on electron-beam lithography and its associated technologies was published by K. R. Shoulderst (then at SRI), which set the stage for our subsequent efforts in this field. He had the foresight to believe that the building of such small devices was actually within the range of human capabilities. As a result of this initial momentum, our experience in the technologies associated with microfabrication has become remarkably comprehensive, despite the relatively small size of our research activity. We have frequently been asked to deliver seminars or provide reviews on various aspects of micro fabrication. These activities made us aware of the need for a comprehensive overview of the physics of microfabrication. We hope that this book will fill that need.
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1461532841
Category : Science
Languages : en
Pages : 409
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Book Description
The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.
Author: Ivor Brodie
Publisher: Springer Science & Business Media
ISBN: 1475767757
Category : Science
Languages : en
Pages : 661
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Book Description
In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.
Author: Bruce W. Smith
Publisher: CRC Press
ISBN: 1420051539
Category : Technology & Engineering
Languages : en
Pages : 864
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Book Description
This new edition of the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from elementary concepts to advanced aspects of modern submicron microlithography. Each chapter reflects the current research and practices from the world's leading academic and industrial laboratories detailed by a stellar panel of international experts. New in the Second Edition In addition to updated information on existing material, this new edition features coverage of technologies developed over the last decade since the first edition appeared, including: Immersion Lithography 157nm Lithography Electron Projection Lithography (EPL) Extreme Ultraviolet (EUV) Lithography Imprint Lithography Photoresists for 193nm and Immersion Lithography Scatterometry Microlithography: Science and Technology, Second Edition authoritatively covers the physics, chemistry, optics, metrology tools and techniques, resist processing and materials, and fabrication methods involved in the latest generations of microlithography such as immersion lithography and extreme ultraviolet (EUV) lithography. It also looks ahead to the possible future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current literature, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to achieve robust, accurate, and cost-effective microlithography processes and systems.
Author: Phillip D. Blais
Publisher:
ISBN:
Category : Art
Languages : en
Pages : 200
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Book Description
