The Effect of Cl2 Adsorption Mechanism Upon SiCl Adsorbate Structure and the SiCl2 Desorption Process on Si(111)-7x7 Surfaces

The Effect of Cl2 Adsorption Mechanism Upon SiCl Adsorbate Structure and the SiCl2 Desorption Process on Si(111)-7x7 Surfaces PDF Author: Chun Yan
Publisher:
ISBN:
Category :
Languages : en
Pages : 312

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Desorption Product Yields Following Cl2 Adsorption on Si(111)7x7: Coverage and Temperature Dependence

Desorption Product Yields Following Cl2 Adsorption on Si(111)7x7: Coverage and Temperature Dependence PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 35

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Chlorine plays an essential role during the plasma etching of silicon surfaces. The interaction between chlorine and silicon is also important in the epitaxial growth of silicon during chemical vapor deposition with SiCl4 + H2 or SiCl2H2(4-6). An understanding of the structure and stability of chlorine on silicon surfaces is essential for a complete description of the surface reaction steps that define plasma etching and epitaxial growth processes. Previous work on chlorine adsorption on silicon surfaces has focused on the nature of the chloride species obtained after various stages of chlorine adsorption. X-ray photoemission spectroscopy (XPS) studies have monitored the silicon oxidation state after a saturation chlorine exposure Si(111)7x7 at 300k. These xps investigations measure oxidation states that were consistent with the bonding one, two and three chlorine atoms to individual silicon surface atoms. The photoemission studies also demonstrated that monochloride species were present at low chlorine coverages and di- and trichloride species were formed at higher chlorine coverages. Only monochloride species were observed to remain on the Si(111) 7x7 surface after annealing to 673 K (7).

Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 984

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American Doctoral Dissertations

American Doctoral Dissertations PDF Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 800

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Adsorption and Desorption Kinetics for Chlorosilanes on Si(111)7x7

Adsorption and Desorption Kinetics for Chlorosilanes on Si(111)7x7 PDF Author: P. Gupta
Publisher:
ISBN:
Category :
Languages : en
Pages : 9

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The adsorption of chlorosilane molecules on silicon surfaces plays an essential role in silicon epitaxial growth. The kinetics of SiCl4 adsorption are critical to understanding the SiCl4 + 2H2 = Si + 4HCl4 growth reaction. Dichlorosilanes are also gaining widespread acceptance for silicon and Si1-xGe alloy growth. Unfortunately, the adsorption and desorption kinetics for simple chlorosilane molecules such as SiCl4 and SiCl2H2 on silicon surfaces have not been explored. In this study, laser-induced thermal deposition (LITD) and temperature programmed desorption (TPD) techniques were used to probe the Si(111) 7x7 surface following the adsorption of SiCl41 and SiCl2H2.

Characterization of Materials

Characterization of Materials PDF Author: John Wiley & Sons Inc
Publisher: John Wiley & Sons
ISBN: 9780471266969
Category : Materials
Languages : en
Pages : 1390

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Book Description
"A thoroughly updated and expanded new edition, this work features a logical, detailed, and self-contained coverage of the latest materials characterization techniques. Reflecting the enormous progress in the field since the last edition, this book details a variety of new powerful and accessible tools, improvements in methods arising from new instrumentation and approaches to sample preparation, and characterization techniques for new types of materials, such as nanomaterials. Researchers in materials science and related fields will be able to identify and apply the most appropriate method in their work"--

Integrated Chemical Microsensor Systems in CMOS Technology

Integrated Chemical Microsensor Systems in CMOS Technology PDF Author: Andreas Hierlemann
Publisher: Springer Science & Business Media
ISBN: 3540273727
Category : Technology & Engineering
Languages : en
Pages : 236

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Book Description
Beginning with a comprehensive survey of existing semiconductor-based chemical microsensors and microsystems, this book proceeds to describe in detail CMOS technology-based chemical microsensor systems. The benefits of using CMOS technology for developing chemical microsensor systems and, in particular, monolithically integrated sensor systems comprising transducers and associated circuitry are laid out. Several successful realizations of such microsensor systems are presented. First, the fundamentals of the chemical sensing process itself will be elucidated, followed by a short description of microfabrication techniques and the CMOS substrate. Thereafter, a comprehensive overview of semiconductor-based and CMOS-based transducer structures and their applications is given. It is shown that CMOS-technology can be successfully used as platform technology to integrate microtransducers with the necessary driving and signal conditioning circuitry, and, in a next step, to develop monolithic multisensor arrays and fully developed microsystems with on-chip sensor control and standard interfaces. The book concludes with a brief outlook to future developments, such as interfacing cells with CMOS microelectronics.

Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics

Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics PDF Author: Vsevolod Fedorovich Kiselev
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 294

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High Temperature Electronics

High Temperature Electronics PDF Author: Magnus Willander
Publisher: Springer
ISBN: 9781461285083
Category : Technology & Engineering
Languages : en
Pages : 0

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Book Description
There is a growing demand for electronic signal processing at elevated temperatures. A number of approaches have been used to develop this capability. Silicon circuits could be developed and fabricated with an appropriate technology to cover increased temperature ranges. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates. Efforts to use GaN are also useful, although difficult due to the lack of a suitable substrate material for lattice-matched epitaxial growth. Other work concerns electronic compo nent and circuit developments with SiC. Preliminary results have proved interesting. This book attempts to present the possibilities of such circuitry. Some of the solutions obtained so far are directly usable for the many applications where high environmental temperatures exist. Other concepts, particularly the more demanding ones, such as operation above 500 °C, still need much more researching. This also concerns estimates of device lifetimes for con tinuous high temperature operation. This book may help the potential user of such circuitry to find a suitable solution. It should also stimulate more research groups to enter this demanding effort. And finally, it should stimulate a broad awareness of the need and the solutions for this type of electronics. That is why Part One is devoted to high temperature applications.

Interfacial Engineering for Optimized Properties: Volume 458

Interfacial Engineering for Optimized Properties: Volume 458 PDF Author: Clyde L. Briant
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 546

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Book Description
The study of interfaces is one of the oldest areas of research in materials science. The presence of grain boundaries in materials has long been recognized, as has its crucial role in determining mechanical properties. Another long-recognized concept is that the properties of a surface are quite different from those of the bulk. In recent years, researchers have been able to study these interfaces, both internal and external, with a detail not before possible. These advances have stemmed from the ability to obtain atomic resolution images of interfaces, to measure accurate chemical compositions of interfaces, and to model these interfaces and their properties. This volume goes a step further, beyond structural and chemical studies, to explore how all of this information can be used to engineer interfaces for improved properties and overall improved material performance. Significant attention is given to the crystallographic nature of grain boundaries and interfaces, and the relationship between this nature and the performance of a material. The versatility of electron back-scattering pattern analysis (EBSP) in solving a number of interface-related problems is also featured.