Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide PDF full book. Access full book title Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide by Mark R. Wilson. Download full books in PDF and EPUB format.
Author: Mark R. Wilson
Publisher:
ISBN:
Category :
Languages : en
Pages : 442
Get Book Here
Book Description
Author: Mark R. Wilson
Publisher:
ISBN:
Category :
Languages : en
Pages : 442
Get Book Here
Book Description
Author: Walter George Opyd
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
Get Book Here
Book Description
Author: Alison Schary
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 654
Get Book Here
Book Description
Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 1489918043
Category : Technology & Engineering
Languages : en
Pages : 374
Get Book Here
Book Description
Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Author: Michael S. Shur
Publisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677
Get Book Here
Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Author: John Stuart Kleine
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 122
Get Book Here
Book Description
Author: Arjun Mandal
Publisher: Springer
ISBN: 9811043345
Category : Technology & Engineering
Languages : en
Pages : 84
Get Book Here
Book Description
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
Author: Gary Lynn Harris
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 314
Get Book Here
Book Description
Author: S. Coffa
Publisher: Newnes
ISBN: 044459972X
Category : Science
Languages : en
Pages : 1031
Get Book Here
Book Description
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author: Richard Morton
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
Get Book Here
Book Description
