Atomic Layer Deposition for Semiconductors PDF Download
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Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Bradley D. Fahlman
Publisher: Springer
ISBN: 9402412557
Category : Technology & Engineering
Languages : en
Pages : 817
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Book Description
The 3rd edition of this successful textbook continues to build on the strengths that were recognized by a 2008 Textbook Excellence Award from the Text and Academic Authors Association (TAA). Materials Chemistry addresses inorganic-, organic-, and nano-based materials from a structure vs. property treatment, providing a suitable breadth and depth coverage of the rapidly evolving materials field — in a concise format. The 3rd edition offers significant updates throughout, with expanded sections on sustainability, energy storage, metal-organic frameworks, solid electrolytes, solvothermal/microwave syntheses, integrated circuits, and nanotoxicity. Most appropriate for Junior/Senior undergraduate students, as well as first-year graduate students in chemistry, physics, or engineering fields, Materials Chemistry may also serve as a valuable reference to industrial researchers. Each chapter concludes with a section that describes important materials applications, and an updated list of thought-provoking questions.
Author: Ragnar Hellborg
Publisher: Springer Science & Business Media
ISBN: 364200623X
Category : Technology & Engineering
Languages : en
Pages : 450
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Book Description
Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. Materials with tailored optical, magnetic and electrical properties can be fabricated by synthesis of nanocrystals by ion implantation, focused ion beams can be used to machine away and deposit material on a scale of nanometres and the scattering of energetic ions is a unique and quantitative tool for process development in high speed electronics and 3-D nanostructures with extreme aspect radios for tissue engineering and nano-fluidics lab-on-a-chip may be machined using proton beams. This book will benefit practitioners, researchers and graduate students working in the field of ion beams and application and more generally everyone concerned with the broad field of nanoscience and technology.
Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Tapan Gupta
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433
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Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Author: Niladri Pratap Maity
Publisher: CRC Press
ISBN: 1000527441
Category : Science
Languages : en
Pages : 248
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Book Description
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Author: Hugh O. Pierson
Publisher: William Andrew
ISBN: 0815517432
Category : Technology & Engineering
Languages : en
Pages : 507
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Book Description
Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.
Author: Robert Bosch
Publisher:
ISBN: 9780837603339
Category : Automobiles
Languages : en
Pages : 0
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Book Description
A pocket-sized technical reference designed to provide reliable data, at a practical level, for automotive engineers and mechanics.
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 146
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Book Description
Author: Ram Ekwal Sah
Publisher: The Electrochemical Society
ISBN: 1566775523
Category : Dielectric films
Languages : en
Pages : 863
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Book Description
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
