Review of Radio Science

Review of Radio Science PDF Author: W. Ross Stone
Publisher: John Wiley & Sons
ISBN: 9780471268666
Category : Science
Languages : en
Pages : 1028

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Book Description
A triennial summation of the state of the art in radio science This book is the fourth in the modern series of triennial reviews prepared by the International Union of Radio Science to further communication and understanding of the status and future of radio science, both for those working in the field, and for those who want to know what is of current importance in this area. The International Union of Radio Science, URSI (Union Radio-Scientifique Internationale), has divided the subject of "Radio Science" according to the ten topics of the Scientific Commissions that make up URSI. This volume consists of thirty-eight original, peer-reviewed papers. Each paper provides a critical, in-depth review of–and, in many cases, tutorial on–advances and research that have been of significant importance within the area of interest of the Commissions during the past three to four years. Among the topics covered are: Electromagnetic metrology Fields and waves Signals and systems Electronics and photonics Electromagnetic noise and interference Wave propagation and remote sensing Ionospheric radio and propagation Waves in plasmas Radio astronomy Electromagnetics in biology and medicine With an included CD-ROM of the full book text, allowing the user to do full-text searching of all the papers, the Review of Radio Science: 1999—2002 is a resource of vital importance to anyone working in, or with an interest in, radio science.

Review of Radio Science

Review of Radio Science PDF Author: W. Ross Stone
Publisher: John Wiley & Sons
ISBN: 9780471268666
Category : Science
Languages : en
Pages : 1028

Get Book Here

Book Description
A triennial summation of the state of the art in radio science This book is the fourth in the modern series of triennial reviews prepared by the International Union of Radio Science to further communication and understanding of the status and future of radio science, both for those working in the field, and for those who want to know what is of current importance in this area. The International Union of Radio Science, URSI (Union Radio-Scientifique Internationale), has divided the subject of "Radio Science" according to the ten topics of the Scientific Commissions that make up URSI. This volume consists of thirty-eight original, peer-reviewed papers. Each paper provides a critical, in-depth review of–and, in many cases, tutorial on–advances and research that have been of significant importance within the area of interest of the Commissions during the past three to four years. Among the topics covered are: Electromagnetic metrology Fields and waves Signals and systems Electronics and photonics Electromagnetic noise and interference Wave propagation and remote sensing Ionospheric radio and propagation Waves in plasmas Radio astronomy Electromagnetics in biology and medicine With an included CD-ROM of the full book text, allowing the user to do full-text searching of all the papers, the Review of Radio Science: 1999—2002 is a resource of vital importance to anyone working in, or with an interest in, radio science.

Conference Proceedings

Conference Proceedings PDF Author:
Publisher:
ISBN: 9780862131524
Category : Microwave devices
Languages : en
Pages : 310

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Book Description


Physics of High-Speed Transistors

Physics of High-Speed Transistors PDF Author: Juras Pozela
Publisher: Springer Science & Business Media
ISBN: 1489912428
Category : Science
Languages : en
Pages : 351

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Book Description
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

29th European Microwave Conference Incorporating MIOP '99

29th European Microwave Conference Incorporating MIOP '99 PDF Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 462

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Book Description


III-V Microelectronics

III-V Microelectronics PDF Author: J.P. Nougier
Publisher: Elsevier
ISBN: 1483295230
Category : Technology & Engineering
Languages : en
Pages : 523

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Book Description
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 846

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Book Description


Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits PDF Author: G.A. Armstrong
Publisher: IET
ISBN: 0863417434
Category : Technology & Engineering
Languages : en
Pages : 457

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Book Description
The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Nanometer CMOS ICs

Nanometer CMOS ICs PDF Author: Harry Veendrick
Publisher: Springer Nature
ISBN: 303164249X
Category :
Languages : en
Pages : 697

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Book Description


Physics of Semiconductor Devices-99

Physics of Semiconductor Devices-99 PDF Author: Vikram Kumar
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Science
Languages : en
Pages : 780

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Book Description


SiGe Heterojunction Bipolar Transistors

SiGe Heterojunction Bipolar Transistors PDF Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286

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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.