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Author: James B. Kuo
Publisher: John Wiley & Sons
ISBN: 0471464171
Category : Technology & Engineering
Languages : en
Pages : 424
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Book Description
A practical, comprehensive survey of SOI CMOS devices and circuitsfor microelectronics engineers The microelectronics industry is becoming increasingly dependent onSOI CMOS VLSI devices and circuits. This book is the first toaddress this important topic with a practical focus on devices andcircuits. It provides an up-to-date survey of the current knowledgeregarding SOI device behaviors and describes state-of-the-artlow-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entirefield, from basic concepts to the most advanced ideas. Topicsinclude: * SOI device behavior: fundamental and floating body effects, hotcarrier effects, sensitivity, reliability, self-heating, breakdown,ESD, dual-gate devices, accumulation-mode devices, short channeleffects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM,SRAM, static logic, dynamic logic, gate array, CPU, frequencydivider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC,sigma-delta modulators, RF circuits, VCO, mixers, low-noiseamplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300important figures on low-voltage SOI CMOS devices and circuits,this volume serves as an authoritative, reliable resource forengineers designing these circuits in high-tech industries.
Author: James B. Kuo
Publisher: John Wiley & Sons
ISBN: 0471464171
Category : Technology & Engineering
Languages : en
Pages : 424
Get Book Here
Book Description
A practical, comprehensive survey of SOI CMOS devices and circuitsfor microelectronics engineers The microelectronics industry is becoming increasingly dependent onSOI CMOS VLSI devices and circuits. This book is the first toaddress this important topic with a practical focus on devices andcircuits. It provides an up-to-date survey of the current knowledgeregarding SOI device behaviors and describes state-of-the-artlow-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entirefield, from basic concepts to the most advanced ideas. Topicsinclude: * SOI device behavior: fundamental and floating body effects, hotcarrier effects, sensitivity, reliability, self-heating, breakdown,ESD, dual-gate devices, accumulation-mode devices, short channeleffects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM,SRAM, static logic, dynamic logic, gate array, CPU, frequencydivider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC,sigma-delta modulators, RF circuits, VCO, mixers, low-noiseamplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300important figures on low-voltage SOI CMOS devices and circuits,this volume serves as an authoritative, reliable resource forengineers designing these circuits in high-tech industries.
Author: Suman Lata Tripathi
Publisher: CRC Press
ISBN: 1000344967
Category : Technology & Engineering
Languages : en
Pages : 319
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Book Description
This new volume offers a broad view of the challenges of electronic devices and circuits for IoT applications. The book presents the basic concepts and fundamentals behind new low power, high-speed efficient devices, circuits, and systems in addition to CMOS. It provides an understanding of new materials to improve device performance with smaller dimensions and lower costs. It also looks at the new methodologies to enhance system performance and provides key parameters for exploring the devices and circuit performance based on smart applications. The chapters delve into myriad aspects of circuit design, including MOSFET structures depending on their low power applications for IoT-enabled systems, advanced sensor design and fabrication using MEMS, indirect bootstrap techniques, efficient CMOS comparators, various encryption-decryption algorithms, IoT video forensics applications, microstrip patch antennas in embedded IoT applications, real-time object detection using sound, IOT and nanotechnologies based wireless sensors, and much more.
Author: Ajit Pal
Publisher: Springer
ISBN: 8132219376
Category : Technology & Engineering
Languages : en
Pages : 417
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Book Description
The book provides a comprehensive coverage of different aspects of low power circuit synthesis at various levels of design hierarchy; starting from the layout level to the system level. For a seamless understanding of the subject, basics of MOS circuits has been introduced at transistor, gate and circuit level; followed by various low-power design methodologies, such as supply voltage scaling, switched capacitance minimization techniques and leakage power minimization approaches. The content of this book will prove useful to students, researchers, as well as practicing engineers.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 9781402077739
Category : Science
Languages : en
Pages : 392
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Book Description
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
Author: James B. Kuo
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
Geared to the needs of engineers and designers in the field, this unique volume presents a remarkably detailed analysis of one of the hottest and most compelling research topics in microelectronics today - namely, low-voltage CMOS VLSI circuit techniques for VLSI systems. It features complete guidelines to diversified low-voltage and low-power circuit techniques, emphasizing the role of submicron and CMOS processing technology and device modeling in the circuit designs of low-voltage CMOS VLSI.
Author: Shilpi Birla
Publisher: CRC Press
ISBN: 1000995178
Category : Technology & Engineering
Languages : en
Pages : 339
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Book Description
This reference textbook discusses low power designs for emerging applications. This book focuses on the research challenges associated with theory, design, and applications towards emerging Microelectronics and VLSI device design and developments, about low power consumptions. The advancements in large-scale integration technologies are principally responsible for the growth of the electronics industry. This book is focused on senior undergraduates, graduate students, and professionals in the field of electrical and electronics engineering, nanotechnology. This book: Discusses various low power techniques and applications for designing efficient circuits Covers advance nanodevices such as FinFETs, TFETs, CNTFETs Covers various emerging areas like Quantum-Dot Cellular Automata Circuits and FPGAs and sensors Discusses applications like memory design for low power applications using nanodevices The number of options for ICs in control applications, telecommunications, high-performance computing, and consumer electronics continues to grow with the emergence of VLSI designs. Nanodevices have revolutionized the electronics market and human life; it has impacted individual life to make it more convenient. They are ruling every sector such as electronics, energy, biomedicine, food, environment, and communication. This book discusses various emerging low power applications using CMOS and other emerging nanodevices.
Author: Takayasu Sakurai
Publisher: Springer
ISBN: 9781441939777
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.
Author: Jun Ohta
Publisher: CRC Press
ISBN: 1498797342
Category : Technology & Engineering
Languages : en
Pages : 310
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Book Description
Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications, Second Edition is the only book available devoted to smart CMOS image sensors and applications. The book describes the fundamentals of CMOS image sensors and optoelectronic device physics, and introduces typical CMOS image sensor structures, such as the active pixel sensor (APS). Also included are the functions and materials of smart CMOS image sensors and present examples of smart imaging. Various applications of smart CMOS image sensors are also discussed. Several appendices supply a range of information on constants, illuminance, MOSFET characteristics, and optical resolution. Expansion of smart materials, smart imaging and applications, including biotechnology and optical wireless communication, are included. Features • Covers the fundamentals and applications including smart materials, smart imaging, and various applications • Includes comprehensive references • Discusses a wide variety of applications of smart CMOS image sensors including biotechnology and optical wireless communication • Revised and expanded to include the state of the art of smart image sensors
Author: Morin Dehan
Publisher: Presses univ. de Louvain
ISBN: 9782930344393
Category : Science
Languages : en
Pages : 238
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Book Description
The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.
Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 3030045137
Category : Technology & Engineering
Languages : en
Pages : 125
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Book Description
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
