International Conference on Simulation of Semiconductor Processes and Devices PDF Download
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Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 368
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 368
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Book Description
Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709166578
Category : Computers
Languages : en
Pages : 525
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Book Description
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Author: Gerhard Wachutka
Publisher: Springer Science & Business Media
ISBN: 3709106249
Category : Technology & Engineering
Languages : en
Pages : 387
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Book Description
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Author: Kristin De Meyer
Publisher: Springer Science & Business Media
ISBN: 3709168279
Category : Technology & Engineering
Languages : en
Pages : 423
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Book Description
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Author: IEEE Staff
Publisher:
ISBN: 9781509008193
Category :
Languages : en
Pages :
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Book Description
Following the 20 years tradition of the SISPAD conference series as the leading forum for Technology Computer Aided Design (TCAD), the conference provides an opportunity for the presentation and discussion of recent advances in modeling and simulation of semiconductor devices, processes and equipment The scientific program consists of invited and contributed presentations and a poster session Companion workshops are planned for September 5, 2016
Author: Lado Filipovic
Publisher: MDPI
ISBN: 3039210106
Category : Technology & Engineering
Languages : en
Pages : 202
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Book Description
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author:
Publisher:
ISBN: 9784863487635
Category :
Languages : en
Pages :
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Book Description
Author: Chinmay K. Maiti
Publisher: CRC Press
ISBN: 1000638111
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Author: Z. X. Guo
Publisher: Elsevier
ISBN: 184569337X
Category : Technology & Engineering
Languages : en
Pages : 307
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Book Description
Multiscale materials modelling offers an integrated approach to modelling material behaviour across a range of scales from the electronic, atomic and microstructural up to the component level. As a result, it provides valuable new insights into complex structures and their properties, opening the way to develop new, multi-functional materials together with improved process and product designs. Multiscale materials modelling summarises some of the key techniques and their applications.The various chapters cover the spectrum of scales in modelling methodologies, including electronic structure calculations, mesoscale and continuum modelling. The book covers such themes as dislocation behaviour and plasticity as well as the modelling of structural materials such as metals, polymers and ceramics. With its distinguished editor and international team of contributors, Multiscale materials modelling is a valuable reference for both the modelling community and those in industry wanting to know more about how multiscale materials modelling can help optimise product and process design. - Reviews the principles and applications of mult-scale materials modelling - Covers themes such as dislocation behaviour and plasticity and the modelling of structural materials - Examines the spectrum of scales in modelling methodologies, including electronic structure calculations, mesoscale and continuum modelling
Author: Swarup Bhunia
Publisher: Springer Science & Business Media
ISBN: 1441974180
Category : Technology & Engineering
Languages : en
Pages : 444
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Book Description
Design considerations for low-power operations and robustness with respect to variations typically impose contradictory requirements. Low-power design techniques such as voltage scaling, dual-threshold assignment and gate sizing can have large negative impact on parametric yield under process variations. This book focuses on circuit/architectural design techniques for achieving low power operation under parameter variations. We consider both logic and memory design aspects and cover modeling and analysis, as well as design methodology to achieve simultaneously low power and variation tolerance, while minimizing design overhead. This book will discuss current industrial practices and emerging challenges at future technology nodes.
