In Situ Monitoring and Characterization of Superhard Thin-Film Growth Under Non-Equilibrium Conditions PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download In Situ Monitoring and Characterization of Superhard Thin-Film Growth Under Non-Equilibrium Conditions PDF full book. Access full book title In Situ Monitoring and Characterization of Superhard Thin-Film Growth Under Non-Equilibrium Conditions by . Download full books in PDF and EPUB format.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
We have developed new approaches to synthesize superhard/ultrastrong thin films and coatings by chemical vapor deposition (CVD) of unimolecular precursors, and to monitor and characterize the film-growth process in situ and in real time. To this end, we have designed and constructed an ultrahigh vacuum CVD chamber fitted with energy-dispersive x-ray reflectivity (XRR) and multiple- beam optical stress sensor (MOSS) for in situ monitoring of surface morphology and stress evolution of the films under growth. Both of these techniques were applied to the CVD growth of boron and GaN films. We have synthesized novel precursors of C3N3P, Si4CN4, LiBC4N4, BC3N3, BeC2N2, MgC2N2 for CVD growth of films with properties of superhardness. We have also deposited thin films by CVD with the composition of Zr-B-Si-N via reactions of Zr(BH4)4 with SiH4, and Zr(BH4)4 with N(SiH3)4. The elastic constants cli and c44 of these films measured by Brillouin scattering in collaboration with Prof. Sooryakumar of Ohio State University produced results suggesting that films and coatings based on the Zr-B-Si-N system exhibit promising superhard properties.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Get Book Here
Book Description
We have developed new approaches to synthesize superhard/ultrastrong thin films and coatings by chemical vapor deposition (CVD) of unimolecular precursors, and to monitor and characterize the film-growth process in situ and in real time. To this end, we have designed and constructed an ultrahigh vacuum CVD chamber fitted with energy-dispersive x-ray reflectivity (XRR) and multiple- beam optical stress sensor (MOSS) for in situ monitoring of surface morphology and stress evolution of the films under growth. Both of these techniques were applied to the CVD growth of boron and GaN films. We have synthesized novel precursors of C3N3P, Si4CN4, LiBC4N4, BC3N3, BeC2N2, MgC2N2 for CVD growth of films with properties of superhardness. We have also deposited thin films by CVD with the composition of Zr-B-Si-N via reactions of Zr(BH4)4 with SiH4, and Zr(BH4)4 with N(SiH3)4. The elastic constants cli and c44 of these films measured by Brillouin scattering in collaboration with Prof. Sooryakumar of Ohio State University produced results suggesting that films and coatings based on the Zr-B-Si-N system exhibit promising superhard properties.
Author: Orlando Auciello
Publisher: John Wiley & Sons
ISBN: 9780471241416
Category : Science
Languages : en
Pages : 282
Get Book Here
Book Description
An in-depth look at the state of the art of in situ real-time monitoring and analysis of thin films With thin film deposition becoming increasingly critical in the production of advanced electronic and optical devices, scientists and engineers working in this area are looking for in situ, real-time, structure-specific analytical tools for characterizing phenomena occurring at surfaces and interfaces during thin film growth. This volume brings together contributed chapters from experts in the field, covering proven methods for in situ real-time analysis of technologically important materials such as multicomponent oxides in different environments. Background information and extensive references to the current literature are also provided. Readers will gain a thorough understanding of the growth processes and become acquainted with both emerging and more established methods that can be adapted for in situ characterization. Methods and their most useful applications include: * Low-energy time-of-flight ion scattering and direct recoil spectroscopy (TOF-ISRAS) for studying multicomponent oxide film growth processes * Reflection high-energy electron diffraction (RHEED) for determining the nature of chemical reactions at film surfaces * Spectrometric ellipsometry (SE) for use in the analysis of semiconductors and other multicomponent materials * Reflectance spectroscopy and transmission electron microscopy for monitoring epitaxial growth processes * X-ray fluorescence spectroscopy for studying surface and interface structures * And other cost-effective techniques for industrial application
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
Get Book Here
Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
Author: Nuno Araujo
Publisher: LAP Lambert Academic Publishing
ISBN: 9783838369419
Category :
Languages : en
Pages : 224
Get Book Here
Book Description
When films growth under nonequilibrium conditions, phenomena not predicted from microscopic interactions emerge at the macroscopic level. Statistical Physics concepts and methods are then the meaningful methodology to study the problem. This book discusses the influence of the particle/particle and particle/substrate interaction rules on the morphology of the obtained film. Based on the work of the author s phD thesis, interesting structures are discussed, emerging from simple interacting rules as the ones from random sequential adsorption process either in the presence of patterned substrates or during competitive adsorption of particles with different sizes. For the growth regime where diffusion of particles on the substrate cannot be neglected, the influence of the flux of impinging particles on the nucleation and growth of islands is also covered.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1244
Get Book Here
Book Description
Author: Albano Cavaleiro
Publisher: Springer Science & Business Media
ISBN: 0387487565
Category : Technology & Engineering
Languages : en
Pages : 671
Get Book Here
Book Description
This book delivers practical insight into a broad range of fields related to hard coatings, from their deposition and characterization up to the hardening and deformation mechanisms allowing the interpretation of results. The text examines relationships between structure/microstructure and mechanical properties from fundamental concepts, through types of coatings, to characterization techniques. The authors explore the search for coatings that can satisfy the criteria for successful implementation in real mechanical applications.
Author: Gianangelo Bracco
Publisher: Springer Science & Business Media
ISBN: 3642342434
Category : Science
Languages : en
Pages : 668
Get Book Here
Book Description
The book describes the experimental techniques employed to study surfaces and interfaces. The emphasis is on the experimental method. Therefore all chapters start with an introduction of the scientific problem, the theory necessary to understand how the technique works and how to understand the results. Descriptions of real experimental setups, experimental results at different systems are given to show both the strength and the limits of the technique. In a final part the new developments and possible extensions of the techniques are presented. The included techniques provide microscopic as well as macroscopic information. They cover most of the techniques used in surface science.
Author: George Gibbs
Publisher:
ISBN: 9781681176437
Category :
Languages : en
Pages : 284
Get Book Here
Book Description
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Author: André Anders
Publisher: Springer Science & Business Media
ISBN: 0387791086
Category : Science
Languages : en
Pages : 555
Get Book Here
Book Description
Cathodic arcs are among the longest studied yet least understood objects in science. Plasma-generating, tiny spots appear on the cathode; they are highly dynamic and hard to control. With an approach emphasizing the fractal character of cathode spots, strongly fluctuating plasma properties are described such as the presence of multiply charged ions that move with supersonic velocity. Richly illustrated, the book also deals with practical issues, such as arc source construction, macroparticle removal, and the synthesis of dense, well adherent coatings. The book spans a bridge from plasma physics to coatings technology based on energetic condensation, appealing to scientists, practitioners and graduate students alike.
