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Author:
Publisher: Academic Press
ISBN: 0080525253
Category : Science
Languages : en
Pages : 541
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Author:
Publisher: Academic Press
ISBN: 0080525253
Category : Science
Languages : en
Pages : 541
Get Book Here
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Author: Robert K. Willardson
Publisher:
ISBN: 9780127521701
Category : Metals
Languages : en
Pages : 526
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Book Description
Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655
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Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author: Norbert H. Nickel
Publisher:
ISBN:
Category : Metals
Languages : en
Pages : 480
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Book Description
Author: Norbert H. Nickel
Publisher: Materials Research Society
ISBN: 9781558994195
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The study of hydrogen in condensed matter is of significant importance in modern technology. Hydrogen affects the mechanical, electrical and optical properties of many materials and causes embrittlement of metals; changes the optical properties of rare-earth metals and affects the defect structure of most semiconductors. Because hydrogen often moves easily through most materials, its motion leads to changes in these material properties. Because hydrogen is viewed as a potentially clean fuel source of the future, storage, transport and diffusion are of significant societal importance. The study of hydrogen in condensed matter consists of two major subfields -hydrogen in semiconductors and hydrogen in metals and despite their connection, research has often proceeded independently and advances in one are not fully utilized in the other. This book brings these two subfields together. Topics include: hydrogen on surfaces; theory and thermodynamics; hydrogen transport phenomena; nuclear characterization techniques; compound semiconductors; bulk metal; devices and applications; bulk silicon; and carbon and carbon-like materials.
Author: M. Stutzmann
Publisher: Elsevier
ISBN: 0444598839
Category : Science
Languages : en
Pages : 598
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Book Description
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Author: Stephen J. Pearton
Publisher: Springer Science & Business Media
ISBN: 3642847781
Category : Science
Languages : en
Pages : 374
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Book Description
vgl. Hardcoverausgabe.
Author: G. Alefeld
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 420
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Book Description
Author: Jacques I. Pankove
Publisher:
ISBN:
Category :
Languages : en
Pages : 629
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Book Description
Author: S.J. Pearton
Publisher: Trans Tech Publications Ltd
ISBN: 3035704821
Category : Technology & Engineering
Languages : en
Pages : 546
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Book Description
State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
