Growth & Characterization of GaAs Quantum Dots on SrTiO3 Thin Films PDF Download
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Author: Rangaprasad Desikan
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 160
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Author: Rangaprasad Desikan
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 160
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Author: Scott Hill
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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This thesis describes the growth of GaSb quantum dots on silicon substrates. In this particular investigation, the main factors considered w.ere time and substrate temperature. Both were found to have a direct effect on the size and density of the dots grown. Also during this investigation, the growth of a Sb thin film as well as an annealing process prior to the deposition was found to improve the quality of the quantum dot growth. Other factors that are found to be critical to the GaSb dot growth is the pre processing of the wafer in 48% HF solution as well as the use of a hydrogen gas flow during the pre deposition, as well as the deposition itself.
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Category : Power resources
Languages : en
Pages : 980
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Category :
Languages : en
Pages : 12
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Author: Yuh-Haw Wu
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 314
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Author: Mitsuru Sugawara
Publisher: Academic Press
ISBN:
Category : Science
Languages : en
Pages : 392
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This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field. The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future. The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
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Category :
Languages : en
Pages : 19
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Quantum dot nanostructures were investigated experimentally and theoretically for potential applications for optoelectronic devices. We have developed the foundation to produce state-of-the-art compound semiconductor nanostructures in a variety of materials: In(AsSb) on GaAs, GaSb on GaAs, and In(AsSb) on GaSb. These materials cover a range of energies from 1.2 to 0.7 eV. We have observed a surfactant effect in InAsSb nanostructure growth. Our theoretical efforts have developed techniques to look at the optical effects induced by many-body Coulombic interactions of carriers in active regions composed of quantum dot nanostructures. Significant deviations of the optical properties from those predicted by the ''atom-like'' quantum dot picture were discovered. Some of these deviations, in particular, those relating to the real part of the optical susceptibility, have since been observed in experiments.
Author:
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Category : Chemistry
Languages : en
Pages : 2540
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Author: Ildar Mukhametzhanov
Publisher:
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Category :
Languages : en
Pages : 512
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Author:
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Category : Electrical engineering
Languages : en
Pages : 2240
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