Flat Panel Display Materials II: Volume 424 PDF Download
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Author: Miltiadis K. Hatalis
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
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Book Description
The proceedings of a symposium held April 1996, in San Francisco, California. The field is experiencing a rapid growth which currently is expanding from portable computer applications to include display applications for desktop computers and a wide array of consumer and industrial products. Seventy-six contributions are divided into six sections covering amorphous silicon thin-film transistor materials, polycrystalline silicon thin-film transistor materials, liquid crystal display materials, transparent conducting oxides, field emission display materials, and other emissive display materials. Annotation copyrighted by Book News, Inc., Portland, OR
Author: Miltiadis K. Hatalis
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
Get Book Here
Book Description
The proceedings of a symposium held April 1996, in San Francisco, California. The field is experiencing a rapid growth which currently is expanding from portable computer applications to include display applications for desktop computers and a wide array of consumer and industrial products. Seventy-six contributions are divided into six sections covering amorphous silicon thin-film transistor materials, polycrystalline silicon thin-film transistor materials, liquid crystal display materials, transparent conducting oxides, field emission display materials, and other emissive display materials. Annotation copyrighted by Book News, Inc., Portland, OR
Author:
Publisher:
ISBN:
Category : Information display devices
Languages : en
Pages : 372
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Book Description
Author: André Lagendijk
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 224
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Book Description
Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.
Author: Paul Siffert
Publisher: Springer Science & Business Media
ISBN: 3662098970
Category : Technology & Engineering
Languages : en
Pages : 552
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Book Description
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
Author: Jürgen Michel
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 744
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Book Description
The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.
Author:
Publisher:
ISBN:
Category : Rapid thermal processing
Languages : en
Pages : 914
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Book Description
Author: Takashi Buma
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
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Book Description
Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
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Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Author: Kevin L. Jensen
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 584
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Walter J. Gray
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 1398
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Book Description
This book features scientific research that supports the safe and effective disposal of radioactive waste in a geological repository. One highlight of the volume is the opening talk by Rustum Roy, who was instrumental in establishing the first symposium on this topic in 1978. Professor Roy summarizes his views of the past 19 years of progress in the field. A second highlight is the participation by several Russian and Ukrainian scientists who authored papers on nuclear waste disposal aspects of the Chernobyl Unit 4 reactor that exploded in April 1986. Additional topics include: glass formulations and properties; glass/water interactions; cements in radioactive waste management; ceramic and crystalline waste forms; spent nuclear fuel; waste processing and treatment; radiation effects in ceramics, glasses and nuclear waste materials; waste package materials; radionuclide solubility and speciation; radionuclide sorption; radionuclide transport; repository backfill; performance assessment; natural analogues and excess plutonium dispositioning.
