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Author: Frank L. Pedrotti
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs:Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured. (Author).
Author: Frank L. Pedrotti
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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Book Description
The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs:Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured. (Author).
Author: Siu Sing Chan
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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The data presented show that Ge-implanted GaAs has a complex amphoteric behavior which is controlled by the implantation dose, implantation temperature and anneal temperature. Annealing was performed with r.f. plasma deposited Si3N4 as the encapsulant. Implantations at -100 C resulted in p-layers while those performed at 100 C and above resulted in n-layers regardless of the dose and anneal temperature. Room temperature implants resulted in p- or n-layers depending on the combination of dose and anneal temperature. Electrical activation and carrier mobilities in the implanted layers were low. Low temperature (6 K) photoluminescence indicated that a significant amount of residual damage remained after annealing. Carrier concentration profiles in implanted layers and junction characteristics of Ge-implanted GaAs planar diodes are also presented. (Author).
Author: Quazi T. Islam
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 72
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Author: Bryan L. Kelchner
Publisher:
ISBN:
Category :
Languages : en
Pages : 75
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The amphoteric electrical properties of single implants of Ge and dual implants of Ge and As into semi-insulating Cr-doped GaAs have been studied using the Hall-effect/sheet-resistivity measurement method. Room temperature implantation was performed at an ion energy of 120 keV with a dose ranging from 5 x 10 to the 12th power to 3 x 10 to the 15th power per sq cm. The implanted samples were annealed at 900 C for 15 minutes. The results of carrier profile measurements show the amphoteric behavior of Ge, and the Ga-site occupancy by the Ge ions are signficantly enhanced by the addition of As ions. In general, the carrier depth profiles show relatively flat but considerably fluctuating distributions. Capacitance-voltage (C-V) measurements were also made on some samples with low enough carrier concentrations, and the Hall profiles corrected for surface depletion widths were compared with the C-V profiles. SIMS atomic distributions of Ge have also been measured, the the results show that the Ge atomic profiles of the as-implanted samples do not follow the LSS Guassian distribution. The SIMS profile for annealed samples show very little redistribution of the Ge ions. A comparison of the Hall and SIMS data shows that carrier concentrations are much less than the number of Ge ions in most of the implanted region. This is probably due to the unannealed implantation damage and/or electrical self-compensation. (Author).
Author: Gerard John Sullivan
Publisher:
ISBN:
Category :
Languages : en
Pages : 141
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Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
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Author: Gerard John Sullivan
Publisher:
ISBN:
Category :
Languages : en
Pages : 282
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Author: Richard Dana Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
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Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Author:
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Category : Aeronautics
Languages : en
Pages : 456
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Jiagang Shen
Publisher:
ISBN:
Category :
Languages : en
Pages : 74
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