Author: Tejinder Singh
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 225
Book Description
Doping in bulk semiconductors (e.g., n- or p- type doping in silicon) allows for precise control of their properties and forms the basis for the development of electronic and photovoltaic devices. Recently, there have been reports on the successful synthesis of doped semiconductor nanocrystals (or quantum dots) for potential applications in solar cells and spintronics. For example, nanocrystals of ZnSe (with zinc-blende lattice structure) and CdSe and ZnO (with wurtzite lattice structure) have been doped successfully with transition-metal (TM) elements (Mn, Co, or Ni). Despite the recent progress, however, the underlying mechanisms of doping in colloidal nanocrystals are not well understood. This thesis reports a comprehensive theoretical analysis toward a fundamental kinetic and thermodynamic understanding of doping in ZnO, CdSe, and ZnSe quantum dots based on first-principles density-functional theory (DFT) calculations. The theoretical predictions of this thesis are consistent with experimental measurements and provide fundamental interpretations for the experimental observations. The mechanisms of doping of colloidal ZnO nanocrystals with the TM elements Mn, Co, and Ni is investigated. The dopant atoms are found to have high binding energies for adsorption onto the Zn-vacancy site of the (0001) basal surface and the O-vacancy site of the (0001) basal surface of ZnO nanocrystals; therefore, these surface vacancies provide viable sites for substitutional doping, which is consistent with experimental measurements. However, the doping efficiencies are affected by the strong tendencies of the TM dopants to segregate at the nanocrystal surface facets, as indicated by the corresponding computed dopant surface segregation energy profiles. Furthermore, using the Mn doping of CdSe as a case study, the effect of nanocrystal size on doping efficiency is explored. It is shown that Mn adsorption onto small clusters of CdSe is characterized by high binding energies, which, in conjunction with the Mn surface segregation characteristics on CdSe nanocrystals, explains experimental reports of high doping efficiency for small-size CdSe clusters. In addition, this thesis presents a systematic analysis of TM doping in ZnSe nanocrystals. The analysis focuses on the adsorption and surface segregation of Mn dopants on ZnSe nanocrystal surface facets, as well as dopant-induced nanocrystal morphological transitions, and leads to a fundamental understanding of the underlying mechanisms of dopant incorporation into growing nanocrystals. Both surface kinetics (dopant adsorption onto the nanocrystal surface facets) and thermodynamics (dopant surface segregation) are found to have a significant effect on the doping efficiencies in ZnSe nanocrystals. The analysis also elucidates the important role in determining the doping efficiency of ZnSe nanocrystals played by the chemical potentials of the growth precursor species, which determine the surface structure and morphology of the nanocrystals.
Atomic-scale Modeling of Transition-metal Doping of Semiconductor Nanocrystals
Author: Tejinder Singh
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 225
Book Description
Doping in bulk semiconductors (e.g., n- or p- type doping in silicon) allows for precise control of their properties and forms the basis for the development of electronic and photovoltaic devices. Recently, there have been reports on the successful synthesis of doped semiconductor nanocrystals (or quantum dots) for potential applications in solar cells and spintronics. For example, nanocrystals of ZnSe (with zinc-blende lattice structure) and CdSe and ZnO (with wurtzite lattice structure) have been doped successfully with transition-metal (TM) elements (Mn, Co, or Ni). Despite the recent progress, however, the underlying mechanisms of doping in colloidal nanocrystals are not well understood. This thesis reports a comprehensive theoretical analysis toward a fundamental kinetic and thermodynamic understanding of doping in ZnO, CdSe, and ZnSe quantum dots based on first-principles density-functional theory (DFT) calculations. The theoretical predictions of this thesis are consistent with experimental measurements and provide fundamental interpretations for the experimental observations. The mechanisms of doping of colloidal ZnO nanocrystals with the TM elements Mn, Co, and Ni is investigated. The dopant atoms are found to have high binding energies for adsorption onto the Zn-vacancy site of the (0001) basal surface and the O-vacancy site of the (0001) basal surface of ZnO nanocrystals; therefore, these surface vacancies provide viable sites for substitutional doping, which is consistent with experimental measurements. However, the doping efficiencies are affected by the strong tendencies of the TM dopants to segregate at the nanocrystal surface facets, as indicated by the corresponding computed dopant surface segregation energy profiles. Furthermore, using the Mn doping of CdSe as a case study, the effect of nanocrystal size on doping efficiency is explored. It is shown that Mn adsorption onto small clusters of CdSe is characterized by high binding energies, which, in conjunction with the Mn surface segregation characteristics on CdSe nanocrystals, explains experimental reports of high doping efficiency for small-size CdSe clusters. In addition, this thesis presents a systematic analysis of TM doping in ZnSe nanocrystals. The analysis focuses on the adsorption and surface segregation of Mn dopants on ZnSe nanocrystal surface facets, as well as dopant-induced nanocrystal morphological transitions, and leads to a fundamental understanding of the underlying mechanisms of dopant incorporation into growing nanocrystals. Both surface kinetics (dopant adsorption onto the nanocrystal surface facets) and thermodynamics (dopant surface segregation) are found to have a significant effect on the doping efficiencies in ZnSe nanocrystals. The analysis also elucidates the important role in determining the doping efficiency of ZnSe nanocrystals played by the chemical potentials of the growth precursor species, which determine the surface structure and morphology of the nanocrystals.
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 225
Book Description
Doping in bulk semiconductors (e.g., n- or p- type doping in silicon) allows for precise control of their properties and forms the basis for the development of electronic and photovoltaic devices. Recently, there have been reports on the successful synthesis of doped semiconductor nanocrystals (or quantum dots) for potential applications in solar cells and spintronics. For example, nanocrystals of ZnSe (with zinc-blende lattice structure) and CdSe and ZnO (with wurtzite lattice structure) have been doped successfully with transition-metal (TM) elements (Mn, Co, or Ni). Despite the recent progress, however, the underlying mechanisms of doping in colloidal nanocrystals are not well understood. This thesis reports a comprehensive theoretical analysis toward a fundamental kinetic and thermodynamic understanding of doping in ZnO, CdSe, and ZnSe quantum dots based on first-principles density-functional theory (DFT) calculations. The theoretical predictions of this thesis are consistent with experimental measurements and provide fundamental interpretations for the experimental observations. The mechanisms of doping of colloidal ZnO nanocrystals with the TM elements Mn, Co, and Ni is investigated. The dopant atoms are found to have high binding energies for adsorption onto the Zn-vacancy site of the (0001) basal surface and the O-vacancy site of the (0001) basal surface of ZnO nanocrystals; therefore, these surface vacancies provide viable sites for substitutional doping, which is consistent with experimental measurements. However, the doping efficiencies are affected by the strong tendencies of the TM dopants to segregate at the nanocrystal surface facets, as indicated by the corresponding computed dopant surface segregation energy profiles. Furthermore, using the Mn doping of CdSe as a case study, the effect of nanocrystal size on doping efficiency is explored. It is shown that Mn adsorption onto small clusters of CdSe is characterized by high binding energies, which, in conjunction with the Mn surface segregation characteristics on CdSe nanocrystals, explains experimental reports of high doping efficiency for small-size CdSe clusters. In addition, this thesis presents a systematic analysis of TM doping in ZnSe nanocrystals. The analysis focuses on the adsorption and surface segregation of Mn dopants on ZnSe nanocrystal surface facets, as well as dopant-induced nanocrystal morphological transitions, and leads to a fundamental understanding of the underlying mechanisms of dopant incorporation into growing nanocrystals. Both surface kinetics (dopant adsorption onto the nanocrystal surface facets) and thermodynamics (dopant surface segregation) are found to have a significant effect on the doping efficiencies in ZnSe nanocrystals. The analysis also elucidates the important role in determining the doping efficiency of ZnSe nanocrystals played by the chemical potentials of the growth precursor species, which determine the surface structure and morphology of the nanocrystals.
Rare Earth and Transition Metal Doping of Semiconductor Materials
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Determination of Dopant Ion Mobility in Transition Metal Doped Semiconductor Nanocrystals
Author: Michael Robert Rutherford
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 178
Book Description
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 178
Book Description
Transition Metal Doped Colloidal Semiconductor Nanocrystals
Author: Franziska Muckel
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Doping And Photophysical Properties Of II-VI Semiconductor Nanocrystals
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Semiconductor nanocrystals with sizes comparable to the corresponding bulk excitonic diameter exhibit unique size-dependent electronic and optical properties resulting from quantum confinement effect. Such nanocrystals not only allow the study of evolution of bulk properties from the molecular limit providing important fundamental understandings, but also have great technological implications, leading to intense research over the past several years. Besides tuning the crystal size in the nm regime to obtain novel properties, an additional route to derive new functionalities has been to dope transition metal ions into a semiconductor host. Thus, transition metal doped nanocrystals are of great interest since it allows two independent ways to functionalize semiconductor materials, one via the tunability of properties by size variation and other due to properties of such dopants. Chapter 1 of the thesis provide a general introduction to the subject matters dealt in with this thesis, while the necessary methodologies have been discussed in chapter 2. Chapters 3 and 4 of this thesis deal with nanocrystal doping. Following suggestions in previous literatures that the doping of nanocrystal depends strongly upon the crystal structure of the synthesized host nanocrystal, we have studied the phase-transformation between the somewhat zinc-blende and the usual wurtzite structures for CdS and CdSe nanocrystals in chapter 5. In chapter 6 we have pointed out that a gradient structure is essential to achieve nearly ideal photoluminescence efficiency using heterostructured nanocrystals and also achieved strong two-photon absorptions, adding optical bifunctionality to these nanocrystals. Finally, in chapter 7, we establish different approaches to generate white-light using nanocrystals and their unique advantages, as a first step to realizing white light emitting devices. Chapter 1 provides a brief introduction to various interesting properties and concepts relevant for the studies c.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Semiconductor nanocrystals with sizes comparable to the corresponding bulk excitonic diameter exhibit unique size-dependent electronic and optical properties resulting from quantum confinement effect. Such nanocrystals not only allow the study of evolution of bulk properties from the molecular limit providing important fundamental understandings, but also have great technological implications, leading to intense research over the past several years. Besides tuning the crystal size in the nm regime to obtain novel properties, an additional route to derive new functionalities has been to dope transition metal ions into a semiconductor host. Thus, transition metal doped nanocrystals are of great interest since it allows two independent ways to functionalize semiconductor materials, one via the tunability of properties by size variation and other due to properties of such dopants. Chapter 1 of the thesis provide a general introduction to the subject matters dealt in with this thesis, while the necessary methodologies have been discussed in chapter 2. Chapters 3 and 4 of this thesis deal with nanocrystal doping. Following suggestions in previous literatures that the doping of nanocrystal depends strongly upon the crystal structure of the synthesized host nanocrystal, we have studied the phase-transformation between the somewhat zinc-blende and the usual wurtzite structures for CdS and CdSe nanocrystals in chapter 5. In chapter 6 we have pointed out that a gradient structure is essential to achieve nearly ideal photoluminescence efficiency using heterostructured nanocrystals and also achieved strong two-photon absorptions, adding optical bifunctionality to these nanocrystals. Finally, in chapter 7, we establish different approaches to generate white-light using nanocrystals and their unique advantages, as a first step to realizing white light emitting devices. Chapter 1 provides a brief introduction to various interesting properties and concepts relevant for the studies c.
Atomic Scale Modeling of Stress and Pairing Effects on Dopant Behavior in Silicon
Author: Chihak Ahn
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 130
Book Description
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 130
Book Description
Atomic-scale Modeling of Nanostructured Metals and Alloys
Author: Alexander Stukowski
Publisher:
ISBN:
Category :
Languages : en
Pages : 155
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 155
Book Description
Editors’ Showcase: Nanotechnology
Author: Jan M. Macak
Publisher: Frontiers Media SA
ISBN: 283255038X
Category : Science
Languages : en
Pages : 154
Book Description
We are pleased to present the latest Editors’ Showcase: Nanotechnology Research Topic. This exclusive article collection is led by Specialty Chief Editors, Professors Jan Macák, Giancarlo Franzese, Nicolae Coriolan Panoiu, John Fourkas, and Wee-Jun Ong, and submissions are open to Editorial Board members only. The work presented here celebrates the quality and diversity of research performed by our Associate and Review Editors across the entire breadth of the Nanotechnology field, and may include the latest discoveries, current challenges, and future-forward reviews and perspectives.
Publisher: Frontiers Media SA
ISBN: 283255038X
Category : Science
Languages : en
Pages : 154
Book Description
We are pleased to present the latest Editors’ Showcase: Nanotechnology Research Topic. This exclusive article collection is led by Specialty Chief Editors, Professors Jan Macák, Giancarlo Franzese, Nicolae Coriolan Panoiu, John Fourkas, and Wee-Jun Ong, and submissions are open to Editorial Board members only. The work presented here celebrates the quality and diversity of research performed by our Associate and Review Editors across the entire breadth of the Nanotechnology field, and may include the latest discoveries, current challenges, and future-forward reviews and perspectives.
Transition Metal Compounds
Author: Sajjad Haider
Publisher: BoD – Books on Demand
ISBN: 1839680482
Category : Technology & Engineering
Languages : en
Pages : 121
Book Description
This book explores synthesis, structural changes, properties, and potential applications of transition metal (TM) compounds. Over three sections, chapters cover such topics as the synthesis of pentoxide vanadium (V2O5), the effect of TM compounds on structural, dielectric properties and high-temperature superconductors, and TM-doped nanocrystals (NCs).
Publisher: BoD – Books on Demand
ISBN: 1839680482
Category : Technology & Engineering
Languages : en
Pages : 121
Book Description
This book explores synthesis, structural changes, properties, and potential applications of transition metal (TM) compounds. Over three sections, chapters cover such topics as the synthesis of pentoxide vanadium (V2O5), the effect of TM compounds on structural, dielectric properties and high-temperature superconductors, and TM-doped nanocrystals (NCs).
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 836
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 836
Book Description