Atmospheric Pressure Chemical Vapour Deposition of Titanium Nitride from Titanium Tetrachloride and Ammonia PDF Download
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Author: Saccha Ellen Johnson
Publisher:
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Category :
Languages : en
Pages :
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Author: Saccha Ellen Johnson
Publisher:
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Category :
Languages : en
Pages :
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Author: Joshua N. Musher
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 308
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Author: Sarah R. Kurtz
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 254
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Author: Sameer Narsinha Dharmadhikari
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 110
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Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.
Author: N. T. Wakelyn
Publisher:
ISBN:
Category : Graphite
Languages : en
Pages : 22
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Author: Dawn Lee Rymer
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Category : Analytical chemistry
Languages : en
Pages : 0
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Author:
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Category :
Languages : en
Pages : 416
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Author: Giovanni A Battison
Publisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 702
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Author: Gareth Steven Elwin
Publisher:
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Category :
Languages : en
Pages :
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Author: M. Meyyappan
Publisher: The Electrochemical Society
ISBN: 9781566770965
Category : Technology & Engineering
Languages : en
Pages : 644
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