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Author: E. Kondoh
Publisher:
ISBN: 9781632661418
Category : Microelectronics
Languages : en
Pages : 133
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Book Description
Author: E. Kondoh
Publisher:
ISBN: 9781632661418
Category : Microelectronics
Languages : en
Pages : 133
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Book Description
Author: Martin Gall
Publisher: Cambridge University Press
ISBN: 9781107408319
Category : Technology & Engineering
Languages : en
Pages : 204
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Book Description
Enabled by the development and introduction of new materials, the semiconductor industry continues to follow Moore's law into 32nm and 22nm technologies. Advanced interconnect structures require the use of porous dielectrics with further reduced k-values and even weaker mechanical properties, as well as much thinner metallization liners. In addition, the increasing resistivity of Cu at decreasing dimensions must be addressed in order to maintain the performance of continuously shrinking devices. To deal with these issues, and to maintain the reliability of the interconnects, innovations in materials, processes and architectures are needed. This book brings together researchers from around the world to exchange the latest advances in materials, processes, integration and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies. Papers from a joint session with Symposium F, Packaging, Chip-Package Interactions and Solder Materials Challenges, are also included and focus on 3D chip stacking and molecular electronics.
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 127
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Book Description
Author: Mikhail R. Baklanov
Publisher: Materials Research Society
ISBN: 9781605113128
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This volume includes selected papers based on the presentations given at Symposium O, "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics," held at the April 25−29, 2011 MRS Spring Meeting in San Francisco, California. The symposium included topics relating to low-k dielectrics, integration, reliability, metallization, packaging and emerging technologies.
Author: J. W. Bartha
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 366
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Qinghuang Lin
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 366
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Martin Gall
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 216
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: J. W. Bartha
Publisher: Materials Research Society
ISBN: 9781605112268
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Yosi Shacham-Diamand
Publisher: Springer Science & Business Media
ISBN: 0387958681
Category : Science
Languages : en
Pages : 545
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Book Description
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Author: Sandip Bhattacharya
Publisher: CRC Press
ISBN: 1003817068
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
Focusses on materials and nanomaterials utilization in next generation interconnects based on carbon nanotubes (CNT) and graphene nanoribbons (GNR) Helps readers realize interconnects, interconnect models, and crosstalk noise analysis Describes hybrid CNT and GNR based interconnects Presents the details of power supply voltage drop analysis in CNT and GNR interconnects Overviews pertinent RF performance and stability analysis
