A Study of Carbon and Iron Charged Point Defects in Gallium Nitride PDF Download

Author: Mofareh Ahmed Ghazwani
Publisher:
ISBN:
Category : Breakdown voltage
Languages : en
Pages : 154

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Book Description
There is growing demand for high-performance electronics in high volt- age, high current, and high frequency efficiency requirements that current materials (e.g., Si) are not fulfilling. Within the last few years, the rate of development of Si power electronics has slowed as the MOSFET silicon power asymptotically approached its theoretical limits. Gallium natride (GaN) grown on top of a silicon substrate could displace silicon across a significant portion of the power management market. Doping elements in bulk GaN may influence and enhance its prop- erties. Carbon doping of GaN is potentially efficient and useful material for photo-conductive solid-state switches (PCSSs), also called photo-conductive semiconductor switches. However, to make effective use of the rich capabilities of device-scale engineering design tools (e.g., Technology Computer- Aided Design (TCAD)) it is necessary to know a variety of material de- pendent parameters for which experimental results have not been obtained. Therefore, the ability to determine those parameters via ab initio calcula- tions is essential, especially when the material contains some type of defect or dopant. To overcomes this dilemma, we proposed a simulation methodology to extract the needed parameters form atomistic ab initio calculation of bulk (undoped) GaN, carbon-doped GaN, and iron-doped GaN. The proposed method chain was successfully produced the required parameters including electronic structure, polarization properties, phonon calculation, and mechanical and spectroscopic properties for GaN, C-doped GaN, and Fe-GaN crystals. The parameter values were subsequently used in a TCAD tool to compute trans- port properties and breakdown voltage of GaN, C-doped GaN, and Fe-GaN. Result shows that all material properties such as mechanical, optical, polar- ization, transport properties, and the breakdown transport properties and breakdown voltage changed due to the presence of dopants. The comparison of breakdown voltage models for C-doped and Fe-doped GaN channel layers revealed that Fe-doped GaN has a greater breakdown voltage. To produce a more accurate simulation of GaN HEMT, it is necessary to take into account the parameters of a genuine model with their actual values rather than relying on a generic dopant. Key Words: PCSS, GaN, C-doped GaN, Fe-doped GaN, point defect, electronic structure, polarization properties, Piezoelectric constant, phonon calculation, mechanical and optical properties, transport properties, XANES/ELNES spectrscopy, device Simulation (TCAD), Multiscal Methods, OLCAO, breakdown voltage, electron velocity, mobility, scattering rate.