Wide Bandgap Semiconductor Components Integration in a PCB Substrate for the Development of a High Density Power Electronics Converter PDF Download
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Author: Shuangfeng Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
The emerging wide bandgap (WBG) semiconductor devices have been developed for power conversion applications instead of silicon devices due to higher switching frequencies (from few 100 kHz to several MHz) and lower on-state losses resulting in a better efficiency. In order to take full advantage of the WBG components, PCB technology is attractive for high power density integration thanks to its flexibility and low cost. However, due to poor thermal conductivity of the commonly used material Flame Retardant-4 (FR4), efficient thermal solutions are becoming a challenging issue in integrated power boards based on PCB substrates. So it is of the first importance to seek technological means in order to improve the thermal performances. In this thesis, three main thermal management solutions for PCB structures have been investigated including thermal vias, thick copper thickness on the PCB substrate as well as thermoelectric cooling (TEC) devices. Our studies are based on the electro-thermal modeling and 3D finite element (FE) methods. Firstly, optimization of the thermal via parameters (via diameter, via plating thickness, via-cluster surface, via pattern, pitch distance between vias etc.) has been realized to improve their cooing performances. We presented and evaluated thermal performances of the PCB structures by analyzing the thermal resistance of the PCB substrate with different thermal vias. Secondly, it is found that thermal performances of the PCB structures can be enhanced by using thick copper thickness on top of the PCB substrate, which increases the lateral heat flux along the copper layer. Influences of the copper thickness (35 μm to 500 μm) has been discussed. This solution is easy to realize and can be combined with other cooling solutions. Thirdly, thermoelectric cooler like Peltier device is a solid-state cooling technology that can meet the local cooling requirements. Influences of Peltier parameters (Thermoelectric material properties, number of Peltier elements, distance between the heating source and the Peltier devices etc.) have been identified. All these analyses demonstrate the potential application of Peltier devices placed beside the heating source for PCB structures, which is a benefit for developing the embedding technology in such structures.
Author: Shuangfeng Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
The emerging wide bandgap (WBG) semiconductor devices have been developed for power conversion applications instead of silicon devices due to higher switching frequencies (from few 100 kHz to several MHz) and lower on-state losses resulting in a better efficiency. In order to take full advantage of the WBG components, PCB technology is attractive for high power density integration thanks to its flexibility and low cost. However, due to poor thermal conductivity of the commonly used material Flame Retardant-4 (FR4), efficient thermal solutions are becoming a challenging issue in integrated power boards based on PCB substrates. So it is of the first importance to seek technological means in order to improve the thermal performances. In this thesis, three main thermal management solutions for PCB structures have been investigated including thermal vias, thick copper thickness on the PCB substrate as well as thermoelectric cooling (TEC) devices. Our studies are based on the electro-thermal modeling and 3D finite element (FE) methods. Firstly, optimization of the thermal via parameters (via diameter, via plating thickness, via-cluster surface, via pattern, pitch distance between vias etc.) has been realized to improve their cooing performances. We presented and evaluated thermal performances of the PCB structures by analyzing the thermal resistance of the PCB substrate with different thermal vias. Secondly, it is found that thermal performances of the PCB structures can be enhanced by using thick copper thickness on top of the PCB substrate, which increases the lateral heat flux along the copper layer. Influences of the copper thickness (35 μm to 500 μm) has been discussed. This solution is easy to realize and can be combined with other cooling solutions. Thirdly, thermoelectric cooler like Peltier device is a solid-state cooling technology that can meet the local cooling requirements. Influences of Peltier parameters (Thermoelectric material properties, number of Peltier elements, distance between the heating source and the Peltier devices etc.) have been identified. All these analyses demonstrate the potential application of Peltier devices placed beside the heating source for PCB structures, which is a benefit for developing the embedding technology in such structures.
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Yue Hao
Publisher: CRC Press
ISBN: 1315351838
Category : Computers
Languages : en
Pages : 325
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Book Description
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Author: Douglas Pappis
Publisher: BoD – Books on Demand
ISBN: 3737609772
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.
Author: Fan Ren
Publisher: World Scientific
ISBN: 9814486892
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.
Author: Tianyu Chen
Publisher:
ISBN:
Category : Electric current converters
Languages : en
Pages :
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Book Description
Power electronics converters have been widely applied to motor drive systems to decrease the energy consumption by allowing for variable frequency operation. With the requirement of carbon emission reduction, variable frequency drive system will become a trend in the future. Conventional power converters employ Silicon IGBT and are physically separated from the electric machines. With the development of wide bandgap power semiconductors, such as SiC MOSFET and GaN HEMT, it becomes possible to build high temperature, high power density converter and integrate the power converter directly into housing of the motors. However, because of the limited space, high temperature, and high magnetic flux density inside electric machines, integration of power converter into a motor becomes a challenging work. This study presents the research on high power density converter and the integration of power converter into an induction motor. In this study, two prototypes of GaN HEMT-based power converter are built and integrated into a 3-hp induction motor. The PCB layout of power stage is investigated and optimized. The leakage magnetic flux on the surface of the power converter is simulated and experimentally measured. To facilitate the thermal dissipation of the power converter, the motor endcap is redesigned and the thermal analysis is performed for the integrated motor drive system as a whole. The topologies of power converter with an active front-end rectifier are investigated and compared, and the totem-pole rectifier with power pulsation buffer is selected as the front-end stage. With the GaN converter integrated into the induction motor, the variable frequency operation of the integrated motor drive system is validated through experimental test..
Author:
Publisher:
ISBN:
Category : Electric current converters
Languages : en
Pages : 0
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Book Description
Wide bandgap (WBG) semiconductor materials allow higher power and voltage, faster and more reliable power electronic devices. These characteristics lead to a massive improvement in power converters, especially for electric vehicles (EV) applications. As a result, new opportunities for high efficiency and power density is coming with the development of WBG power semiconductor. This paper introduces the application of WBG devices in power converters of EV. The EV development trend and the related circuit diagram of an EV system have been introduced. Serval typical power converters' topologies have been discussed. Meanwhile, WBG devices also bring challenges to a high voltage and frequency design. High current and voltage levels need a more powerful heating system. A higher switching speed requires lower loop parasitic inductance. This paper discusses how to apply WBG devices in the power converter design and address these challenges. Finally, The reliability test method of power converters has been discussed. The lifetime of all components in a power converter has been tested under different voltage and temperature levels. The failure reasons and influences parameters are analyzed.
Author: Michael Robert Hontz
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 120
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Book Description
This dissertation investigates the modeling of next generation wide bandgap semiconductors in several domains. The first model developed is of a GaN Schottky diode with a unique AlGaN cap layer. This model is developed using fundamental physical laws and analysis and allows for the characteristics of the diode to be designed by adjusting aspects of the diode's fabrication and structure. The second model is of a lateral GaN HEMT and is developed using TCAD simulation software in order to fit experimental data based on static characteristics. This procedure endeavors to simultaneously fit several output characteristics of the HEMT device to facilitate the applicability and evaluation of the device for power electronics applications. This model is then used to analyze the effects of various substrate material choices on the performance of the GaN HEMT in a switching application. Finally, a link between TCAD models of devices and a circuit simulation platform is demonstrated. This system allows for simulation and testing of devices in complex power electronic systems while maintaining a direct dependence between the system-level performance and the physical parameters of the device. This link between TCAD and circuit simulation is then used to develop an iterative optimization procedure to design a semiconductor device for a particular power electronic application. The work demonstrated here develops procedures to create high-fidelity models of wide bandgap semiconductor devices and enables the purposeful design of devices for their intended application with a high degree of confidence in meeting system requirements. It is through this focusing of device modeling and design, that the rate of technological transfer of next-generation semiconductor devices to power electronics systems can be improved.
Author: R. J. Shul
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 578
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Book Description
Interest in wide-bandgap semiconductors for high-power/high-temperature electronics remains prominent. For such applications, SiC is by far the most mature semiconductor material. GaN and diamond, however, have also become prime candidates. While diamond has several advantages over the other two materials, producing large single crystals, as well as the inability to achieve n-type doping, have limited device fabrication. For GaN, recent advances in crystal growth and processing capabilities, as well as excellent transport properties, have yielded a great deal of device development, yet thermal conduction remains an issue. SiC has excellent thermal conductivity, high-breakdown voltages, and well-developed substrates and processing techniques. This book deals with a wide range of technical activity in the area of wide-bandgap high-power/high-temperature electronic devices and covers topics including the fabrication and performance of GaN-based and SiC-based devices, as well as issues related to growth, characterization, and processing of wide-bandgap materials. Several summaries of the current status of the field are provided.
Author: S. Jang
Publisher: The Electrochemical Society
ISBN: 1607688700
Category : Science
Languages : en
Pages : 53
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Book Description
This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
