Ultrafast Spectroscopy of Wide Bandgap Semiconductor Nanostructures PDF Download
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 159
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Book Description
Mots-clés de l'auteur: III-nitrides ; ZnO ; external quantum efficiency ; excitons ; biexcitons ; electron-hole plasma ; Mott-transition ; polariton lasing ; exciton binding energy ; non-polar QWs.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 159
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Book Description
Mots-clés de l'auteur: III-nitrides ; ZnO ; external quantum efficiency ; excitons ; biexcitons ; electron-hole plasma ; Mott-transition ; polariton lasing ; exciton binding energy ; non-polar QWs.
Author: Jagdeep Shah
Publisher: Springer Science & Business Media
ISBN: 9783540642268
Category : Science
Languages : en
Pages : 552
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Book Description
Ultrafast spectroscopy of semiconductors and semiconductor nanostructures is currently one of the most exciting areas of research in condensed-matter physics. Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors. This second edition presents the most striking recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy; it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses.
Author: Kong-Thon Tsen
Publisher: Springer Science & Business Media
ISBN: 9783540402398
Category : Technology & Engineering
Languages : en
Pages : 424
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Book Description
An international team of experts describes the optical and electronic properties of semiconductors and semiconductor nanostructures at picosecond and femtosecond time scales. The contributions cover the latest research on a wide range of topics. In particular they include novel experimental techniques for studying and characterizing nanostructure materials. The contributions are written in a tutorial way so that not only researchers in the field but also researchers and graduate students outside the field can benefit.
Author: Xiaoming Wen
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 144
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Book Description
Author: Jagdeep Shah
Publisher: Springer Science & Business Media
ISBN: 366203770X
Category : Science
Languages : en
Pages : 536
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Book Description
Ultrafast spectroscopy of semiconductors and semiconductor nanostructures is currently one of the most exciting areas of research in condensed-matter physics. Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors. This second edition presents the most striking recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy; it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses.
Author: Daniel P. Collins
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Eougenious L. Ivchenko
Publisher: Alpha Science Int'l Ltd.
ISBN: 9781842651506
Category : Science
Languages : en
Pages : 444
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Book Description
This volume looks at optical spectroscopy of semiconductir nanostructures. Some of the topics it covers include: kingdom of nanostructures; quantum confinement in low-dimensional systems; resonant light reflection; and transmission and absorption.
Author:
Publisher: Elsevier
ISBN: 0080540953
Category : Technology & Engineering
Languages : en
Pages : 483
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author: Thomas F George
Publisher: World Scientific
ISBN: 9814466824
Category : Science
Languages : en
Pages : 540
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Book Description
Computational Studies of New Materials was published by World Scientific in 1999 and edited by Daniel Jelski and Thomas F George. Much has happened during the past decade. Advances have been made on the same materials discussed in the 1999 book, including fullerenes, polymers and nonlinear optical processes in materials, which are presented in this 2010 book. In addition, different materials and topics are comprehensively covered, including nanomedicine, hydrogen storage materials, ultrafast laser processes, magnetization and light-emitting diodes.
Author: Hongxing Jiang
Publisher: CRC Press
ISBN: 9781560329725
Category : Technology & Engineering
Languages : en
Pages : 430
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Book Description
The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.
