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Languages : en
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Author: J. Leon Shohet
Publisher: CRC Press
ISBN: 1351204939
Category : Technology & Engineering
Languages : en
Pages : 2883

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Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]

Author: Sun-Yi Chang
Publisher:
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Category :
Languages : en
Pages :

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Author: Jasbir S. Juneja
Publisher:
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Category :
Languages : en
Pages : 31

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Languages : en
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Aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films. Two types of pulsed DC (unipolar and asymmetric bipolar) were studied with respect to characteristics and properties of resultant films. The unipolar power supply generates a series of 75 kHz DC pulses modulated with 2.5 kHz frequency. The frequency of asymmetric power supply can be varied from 50 kHz to 250 kHz. The duty cycle, which is a ratio of negative pulse time to total time, can be varied from 60% to 98%. Very fast oscillation and overshoot were observed when the polarity of the target voltage was changed. The control of crystal orientation of deposited film is important since the properties of AlN film is related with the orientation. For example, the acoustic velocity is high along the c-axis. The electromechanical coupling coefficient is large in a-axis direction. The crystal orientation and microstructure of the AlN films were strongly affected by the deposition conditions such as sputtering power, growth temperature, sputtering gas pressure and frequency/duty cycle. The crystal orientation of AlN films was closely related with the energy of sputtered atoms and mobility of adatoms on substrate. The c-axis oriented films were obtained when the target power and growth temperature were high. This provided higher energy of sputtered atoms and mobility of adatoms. The deposited AlN films have a columnar structure. The crystal orientation of the AlN films was changed from (101) to (002) by applying an RF bias was applied to the substrate in unipolar pulsed DC sputtering. The columnar structure disappeared when the RF bias was applied to the substrate. Applying bias was thought to increase mobility of adatoms by ion bombardment. MIM (aluminum-AlN-aluminum or molybdenum) structure was fabricated to measure electric properties of AlN films. Dielectric constants of 8.5 to 11.5 were obtained at 100 kHz. Th.

Author: O.S Serebryannikova
Publisher:
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Category :
Languages : en
Pages : 5

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Languages : en
Pages : 0

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Author: Yong Wang
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Languages : en
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Author: Ashish Garg
Publisher:
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Languages : en
Pages :

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Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.

Author: Anil Kumar Gadipelly
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659539350
Category :
Languages : en
Pages : 176

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In this book we have discussed the preparation and characterization of CdO thin films using RF reactive magnetron sputtering technique. The deposition parameters such as oxygen partial pressure, substrate temperature and film thickness are optimized for producing good quality films. Systematic characterization of as deposited and annealed films has been discussed from the crystal structure, surface morphology, film composition, optical and electrical properties. The films prepared under optimized conditions are tested for gas sensing characteristics towards ammonia gas.