The Preparation of (Al2O3)x(SiO2)y Thin Films Using (Al(OSiEt3)3)2 as a Single Source Precursor PDF Download
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Languages : en
Pages : 34
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Book Description
Aluminum silicates, (Al2O3)x(SiO2)y, are attractive candidates as corrosion and wear-resistant coatings for metals and other substrates, due to their superior properties of creep resistance, thermal expansion, and chemical stability. Recently, it has been proposed that amorphous alumina-silica films would find application as insulators in multilevel interconnections, and as encapsulants for active devices and thin film components, because they do not suffer the temperature instability of alumina films while retaining the desirable insulating characteristics. Thin films of aluminum silicates have been previously prepared by either sol-gel techniques or the pyrolysis of aluminum-silicon containing polymers. However, there remain some difficulties in obtaining homogeneous and continuous films. Metal-organic chemical vapor deposition (MOCVD) offers and attractive alternative to these methods, since contiguous, homogeneous thin films can be deposited at low temperatures with high growth rates.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 34
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Book Description
Aluminum silicates, (Al2O3)x(SiO2)y, are attractive candidates as corrosion and wear-resistant coatings for metals and other substrates, due to their superior properties of creep resistance, thermal expansion, and chemical stability. Recently, it has been proposed that amorphous alumina-silica films would find application as insulators in multilevel interconnections, and as encapsulants for active devices and thin film components, because they do not suffer the temperature instability of alumina films while retaining the desirable insulating characteristics. Thin films of aluminum silicates have been previously prepared by either sol-gel techniques or the pyrolysis of aluminum-silicon containing polymers. However, there remain some difficulties in obtaining homogeneous and continuous films. Metal-organic chemical vapor deposition (MOCVD) offers and attractive alternative to these methods, since contiguous, homogeneous thin films can be deposited at low temperatures with high growth rates.
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ISBN:
Category :
Languages : en
Pages : 12
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Book Description
Amorphous (Al203)x(SiO2)y thin films have been grown by atmospheric pressure metal-organic chemical vapor deposition using the single source precursor Al(OSiEt3)32. Characterization by X-ray photoelectron spectroscopy indicated that the films consisted of a mixture of Al2O3, SiO2 and an aluminosilicate. The relative amount of each species was dependent on the deposition temperature and the carrier gas composition. Use of NH3 as the carrier gas resulted in the increased volatility of the precursor by the in situ formation of the low melting Lewis acid-base adduct A1(OSiEt3)3(NH3), however, no nitrogen incorporation was observed in these deposited films.
