The Growth and Characterization of II-VI Semiconductor Thin Films PDF Download
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Author: A. M. Patterson
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: A. M. Patterson
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Zuoming Zhu
Publisher:
ISBN:
Category :
Languages : en
Pages : 290
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Author: Anthony Michael Patterson
Publisher:
ISBN:
Category :
Languages : en
Pages : 1681
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Author: Ghenadii Korotcenkov
Publisher: Springer Nature
ISBN: 3031195310
Category : Technology & Engineering
Languages : en
Pages : 585
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Book Description
Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The first volume "Materials and Technologies" of a three-volume set describes the physical, chemical and electronic properties of II-VI compounds, which give rise to an increased interest in these semiconductors. Technologies that are used in the development of various devices based on II-VI connections, such as material synthesis, deposition, characterization, processing, and device fabrication, are also discussed in detail in this volume. It covers also topics related to synthesis and application of II-VI-based nanoparticles and quantum dots, as well their toxicity, biocompatibility and biofunctionalization.
Author: J. Mirecki Millunchick
Publisher: Cambridge University Press
ISBN: 9781107413092
Category : Technology & Engineering
Languages : en
Pages : 350
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Strain has a tremendous effect on the morphology and composition of heteroepitaxial semiconductor thin films. Recent progress in strained island formation, and in the morphological and compositional instabilities induced by heteroepitaxial stress, has led to new theoretical and experimental advances, as well as to promising materials for various optoelectronic applications. This book brings together research groups looking at important advances and breaking news in the field. The book centers around mechanisms rather than materials, thus papers in different semiconductor systems, including SiGe, III-V, nitrides, or II-VI semiconductors, are presented. Issues on growth, characterization, and modeling of morphological and compositional nonuniformities are also addressed, as are devices based on these spontaneous structures. Topics include: surface dynamics - atomistic processes; growth on patterned, high-index and vicinal substrates; quantum dots and wires; interdiffusion and segregation; band structure, electronic properties and devices; morphology and microstructure; and nitrides
Author: Randall lee Harper
Publisher:
ISBN:
Category :
Languages : en
Pages : 324
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Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
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The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Author: Christopher Nebel
Publisher: Elsevier
ISBN: 0080541046
Category : Science
Languages : en
Pages : 411
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Book Description
Part II reviews the state of the art of thin film diamond a very promising new semiconductor that may one day rival silicon as the material of choice for electronics. Diamond has the following important characteristics; it is resistant to radiation damage, chemically inert and biocompatible and it will become "the material" for bio-electronics, in-vivo applications, radiation detectors and high-frequency devices. Thin-Film Diamond II is the first book to summarize state of the art of CVD diamond in depth. It covers the most recent results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, applications of diamond in electrochemistry, as detectors, and in surface acoustic wave devices * Accessible by both experts and non-experts in the field of semi-conductors research and technology, each chapter is written in a tutorial format· * Assisting engineers to manufacture devices with optimized electronic properties· * Truly international, this volume contains chapters written by recognized experts representing academic and industrial institutions from Europe, Japan and the US
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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