The Effects of Temperature and Electron Radiation on the Electrical Properties of A1GaN/GaN Heterostructure Field Effect Transistors PDF Download
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Author: Jeffrey T. Moran
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 104
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Author: Jeffrey T. Moran
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 104
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Author: Yang-An Tan
Publisher:
ISBN:
Category : Microwave devices
Languages : en
Pages : 138
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Author: James M. Sattler
Publisher:
ISBN: 9781423516590
Category :
Languages : en
Pages : 143
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The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T
Author: Congyong Zhu
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 121
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AlGaN/GaN and InAlN/GaN-based heterojunction field effect transistors (HFETs) have demonstrated great high power and high frequency performance. Although AlGaN/GaN HFETs are commercially available, there still remain issues regarding long-term reliability, particularly degradation and ultimately device failure due to the gate-drain region where the electric field peaks. One of the proposed degradation mechanisms is the inverse-piezoelectric effect that results from the vertical electric field and increases the tensile strain. Other proposed mechanisms include hot-electron-induced trap generation, impurity diffusion, surface oxidation, and hot-electron/phonon effects. To investigate the degradation mechanism and its impact on DC, microwave, and noise performance, comprehensive stress experiments were conducted in both un-passivated and passivated AlGaN/GaN HFETs. It was found that degradation of AlGaN/GaN HFETs under reverse-gate-bias stress is dominated by inverse-piezoelectric effect and/or hot-electron injection due to gate leakage. Degradation under on-state-high-field stress is dominated by hot-electron/phonon effects, especially at high drain bias. Both effects are induced by the high electric field present during stress, where the inverse-piezoelectric effect only relates to the vertical electric field and the hot-electron effect relates to the total electric field. InAlN/GaN-based HFETs are expected to have even better performance as power amplifiers due to the large 2DEG density at the InAlN/GaN interface and better lattice-matching. Electrical stress experiments were therefore conducted on InAlN/GaN HFETs with indium compositions ranging from 15.7% to 20.0%. Devices with indium composition of 18.5% were found to give the best compromise between reliability and device performance. For indium compositions of 15.7% and 17.5%, the HFET devices degraded very fast (25 h) under on-state-high-field stress, while the HFET devices with 20.0% indium composition showed very small drain. It was also demonstrated that hot-electron/phonon effects are the major degradation mechanism for InAlN/GaN HFETs due to a large 2DEG density under on-state operations, whereas the inverse-piezoelectric effect is very small due to the small strain for the near lattice-matched InAlN barrier. Compared to lattice-matched InAlN/GaN HFETs, AlGaN/GaN HFETs have much larger strain in the barrier and about half of the drain current level; however, the hot electron/hot phonon effects are still important, especially at high drain bias.
Author: Ricardo S. Sussmann
Publisher: John Wiley & Sons
ISBN: 9780470740361
Category : Technology & Engineering
Languages : en
Pages : 596
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Synthetic diamond is diamond produced by using chemical or physical processes. Like naturally occurring diamond it is composed of a three-dimensional carbon crystal. Due to its extreme physical properties, synthetic diamond is used in many industrial applications, such as drill bits and scratch-proof coatings, and has the potential to be used in many new application areas A brand new title from the respected Wiley Materials for Electronic and Optoelectronic Applications series, this title is the most up-to-date resource for diamond specialists. Beginning with an introduction to the properties of diamond, defects, impurities and the growth of CVD diamond with its imminent commercial impact, the remainder of the book comprises six sections: introduction, radiation sensors, active electronic devices, biosensors, MEMs and electrochemistry. Subsequent chapters cover the diverse areas in which diamond applications are having an impact including electronics, sensors and actuators and medicine.
Author: Monta Raymond Holzworth (Jr)
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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AlGaN/GaN high electron mobility transistors are unique for their combination of high temperature, high power, and high frequency applications. Compared to Si, Ge, and compound semiconductors such as GaAS and InP, AlGaN/GaN transistors outclass the current technology due to their superior combination of high breakdown voltage and high frequency performance. These characteristics arise from structural and electrical properties inherent to the AlGaN/GaN heterojunction which have enabled AlGaN/GaN transistors usage in important military and civilian applications such as microwave and millimeter technology, RADAR systems, and as high current and voltage switches in utility grid systems. As the technology continues to improve due to increased materials quality and device advancements, future applications will require AlGaN/GaN transistor usage under even higher voltages and temperatures. Therefore, the effects of these stresses need to be investigated in order improve device performance and reliability.
Author: Donghyun Jin
Publisher:
ISBN:
Category :
Languages : en
Pages : 103
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Recently, the development of energy efficient electrical power management systems has received considerable interest due to its potential to realize significant energy savings for the world. With current Si-based power electronics system being matured, GaN Field-Effect-Transistors have emerged as a disruptive technology with great potential that arises from the outstanding material properties of GaN. However, in spite of great progress in GaN device fabrication, electrical reliability and a number of unique anomalies of GaN remain key challenges that prevent the wide deployment of this technology. In particular, the dynamic ON-resistance (RON), in which the RON of the transistor remains high for a certain period of time after a high-voltage OFF-ON switching event, is a critical concern. This phenomenon greatly affects the efficiency of electrical power management circuits based on GaN power transistors. This thesis investigates in depth this important issue. Firstly, we have developed a new dynamic RON measurement methodology which can observe dynamic RON transients after OFF-to-ON switching events over many decades in time. We have experimentally demonstrated this technique on GaN-on-SiC high-voltage HEMTs (High-Electron- Mobility-Transistors). The possible origin of the mechanisms responsible for dynamic RON in these devices has been postulated. Through our new technique, the impact of high-power stress on dynamic RON has been investigated as well. The results emphasize the importance of studying dynamic RON characteristics over very short time scale when conducting reliability studies of GaN transistors. Secondly, high-voltage GaN-on-Si MIS (Metal-Insulator-Semiconductor) HEMTs designed for > 600 V switching operation have been investigated. Excessive electron trapping leading to total current collapse has been observed. We have carried out an extensive characterization of this phenomenon and we have proposed "Zener trapping" as the responsible mechanism. In this view, electron trapping takes place inside the AlGaN/GaN heterostructure through a tunneling process under high-electric-field. The understanding derived here suggests that this effect can be mitigated through attention to defect control during epitaxial growth and appropriate design of the field plate structure of the device. Our findings in this thesis provide a path to achieve high performance GaN power transistors with minimum dynamic RON effects.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Jean-Lou Gosselin
Publisher:
ISBN:
Category :
Languages : en
Pages : 137
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AlGaN/GaN heterostructure field-effect transistors (HFETs) are strong candidates for high-power and high-frequency applications. Even in the absence of doping, thanks to high polarization fields, often a two-dimensional electron gas (2DEG) of unprecedented concentrations forms at these heterojunctions. Control over this carrier induction process is crucial in achieving normally-off field-effect transistors (i.e., transistors of zero standby power consumption). One way to achieve this is through polarization engineering. Mesa-isolation geometry seemingly offers interesting avenues to reduce the piezoelectric polarization at the heterointerface, and as a result means for polarization engineering. Using a Poisson-Schrödinger self-consistent solver, the effect of strain on the sheet charge density is investigated in the context of one-, two- and three-dimensional simulations of AlGaN/GaN heterostructures. Properties of the two-dimensional electron gas are detailed and the influences of Aluminum mole fraction, AlGaN barrier thickness, GaN cap layer inclusion are investigated. The carrier confinement in the 2DEG is explored in the case of two-dimensional version of the simulations. Through these studies, the effect of shrinking the size of the mesa on lowering the 2DEG concentration is confirmed. Through performing three-dimensional simulations, the effects of cross-sectional geometry on the average sheet charge density and the threshold voltage are presented. It is shown that as the perimeter-to-area ratio is increased, the carrier concentration decreases, and the threshold voltage becomes less negative. Via these studies, the degree of effectiveness of geometry as means for polarization engineering is, for the first time, theoretically quantified.
Author: Eduardo Martin Chumbes
Publisher:
ISBN:
Category :
Languages : en
Pages : 790
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