Terahertz Sensing Technology - Vol 2: Emerging Scientific Applications And Novel Device Concepts PDF Download
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Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814483990
Category : Technology & Engineering
Languages : en
Pages : 420
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Book Description
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the “THz gap”.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814483990
Category : Technology & Engineering
Languages : en
Pages : 420
Get Book Here
Book Description
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the “THz gap”.
Author: William R. Loerop
Publisher: World Scientific
ISBN: 9789812796660
Category : Technology & Engineering
Languages : en
Pages : 434
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Book Description
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas. Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the OC THz gapOCO. Contents: THz-Frequency Spectroscopic Sensing of DNA and Related Biological Materials (T Globus et al.); Spectroscopy with Electronic Terahertz Techniques for Chemical and Biological Sensing (M K Choi et al.); Terahertz Applications to Biomolecular Sensing (A G Markelz & S E Whitmire); Characteristics of Nano-Scale Composites at THz and IR Spectral Regions (J F Federici & H Grebel); Fundamentals of Terrestrial Millimeter-Wave and THz Remote Sensing (E R Brown); Terahertz Emission Using Quantum Dots and Microcavities (G S Solomon et al.); Terahertz Transport in Semiconductor Quantum Structures (S J Allen & J S Scott); Advanced Theory of Instability in Tunneling Nanostructures (D L Woolard et al.); Wigner Function Simulations of Quantum DeviceOCoCircuits Interactions (H L Grubin & R C Buggeln); Continuous-Wave Terahertz Spectroscopy of Plasmas and Biomolecules (D F Plusquellic et al.). Readership: Undergraduates, graduate students, academics and researchers in engineering and science."
Author: Dwight L. Woolard
Publisher: World Scientific
ISBN: 9812771808
Category : Technology & Engineering
Languages : en
Pages : 261
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Book Description
The inherent advantages and potential payoffs of the terahertz (THz) regime for military and security applications serve as an important driver for interest in new THz-related science and technology. In particular, the very rapid growth in more recent years is arguably most closely linked to the potential payoffs of THz sensing and imaging (THz-S&I). This book presents some of the leading fundamental research efforts towards the realization of practical THz-S&I capabilities for military and security applications. Relevant subjects include theoretical prediction and/or measurement of THz spectroscopic phenomenon in solid-state materials such as high explosives (e.g. HMX, PETN, RDX, TNT, etc.), carbon-fiber composites, biological agents (e.g. DNA, RNA, proteins, amino acids) and organic-semiconductor nanostructures. Individual papers also address the effective utilization of state-of-the-art THz-frequency technology in military and security relevant scenarios such as standoff S&I, screening of packages and personnel, and perimeter defense. Technical papers introduce novel devices and/or concepts that enhance THz source and detector performance, enabling completely new types of sensor functionality at THz frequency (e.g. detection at nanoscale/molecular levels), and defining new and innovative sensing modalities (e.g. remote personnel identification) for defense and security. Therefore, the collective research presented here represents a valuable source of information on the evolving field of THz-S&I for military and security applications. Sample Chapter(s). Foreword (106 KB). Chapter 1: Development of Computational Methodologies for the Prediction and Analysis of Solid-State Terahertz Spectra (1,347 KB). Contents: Fire Damage on Carbon Fiber Materials Characterized by THz Waves (N Karpowicz et al.); Fingerprinting Insulins in the Spectral Region from Mid-IR to THz (R Song et al.); Ambient Air Used as the Nonlinear Media for THz Wave Generation (X Xie et al.); Time Domain Terahertz Imaging of Threats in Luggage and Personnel (D Zimdars et al.); Designed Self-Organization for Molecular Optoelectronic Sensors (M Norton); An Optically-Triggered I-RTD Hybrid THz Oscillator Design (D Woolard et al.); New Technique to Suppress Sidelobe Clutter in Perimeter Security Systems (G W Webb et al.); Remote Identification of Foreign Subjects (A Sokolnikov); and other papers. Readership: University researchers in electrical engineering, physics, chemistry, biology; students and small business efforts in high-frequency electronics and sensors; as a supplement for graduate courses.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814476528
Category : Technology & Engineering
Languages : en
Pages : 143
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Book Description
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Author: Michael Shur
Publisher: World Scientific
ISBN: 9789812562364
Category : Technology & Engineering
Languages : en
Pages : 310
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Book Description
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author: Robert Leoni
Publisher: World Scientific
ISBN: 9814480800
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Author: Dan M. Fleetwood
Publisher: World Scientific
ISBN: 9789812794703
Category : Technology & Engineering
Languages : en
Pages : 354
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Book Description
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814725218
Category : Technology & Engineering
Languages : en
Pages : 102
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Book Description
This book brings together seven selected best papers presented at the 2014 Russia-Japan-USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2014), which was held at the University of Buffalo, New York, USA on 17-21 June 2014.As the third in the series of annual meetings, RJUS TeraTech-2014 continues to be an excellent platform for researchers to exchange their recent original results, and to deal with the technical challenges and barriers of transitioning the research results into the THz system-level applications. The symposium focuses on 2 main areas, namely, interaction of THz radiation with micro- and nano-structures, and advanced solid-state THz emitters and sensors. Leading experts from academia, industry, and government agencies from three countries, including USA, Japan, and Russia, contributed to the collection of research results and developments.This book, covering issues ranging from basic Thz-related phenomena to applications in sensing, imaging, and communications, contains some ground-breaking works in the industry, and will be a useful reference for device and electronics engineers and scientists.
Author: Michael Levinshtein
Publisher: World Scientific
ISBN: 9812703330
Category : Technology & Engineering
Languages : en
Pages : 226
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Book Description
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Author: Susan L. Dexheimer
Publisher: CRC Press
ISBN: 142000770X
Category : Technology & Engineering
Languages : en
Pages : 358
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Book Description
The development of new sources and methods in the terahertz spectral range has generated intense interest in terahertz spectroscopy and its application in an array of fields. Presenting state-of-the-art terahertz spectroscopic techniques, Terahertz Spectroscopy: Principles and Applications focuses on time-domain methods based on femtosecond laser sources and important recent applications in physics, materials science, chemistry, and biomedicine. The first section of the book examines instrumentation and methods for terahertz spectroscopy. It provides a comprehensive treatment of time-domain terahertz spectroscopic measurements, including methods for the generation and detection of terahertz radiation, methods for determining optical constants from time-domain measurements, and the use of femtosecond time-resolved techniques. The last two sections explore a variety of applications of terahertz spectroscopy in physics, materials science, chemistry, and biomedicine. With chapters contributed by leading experts in academia, industry, and research, this volume thoroughly discusses methods and applications, setting it apart from other recent books in this emerging terahertz field.
