Synthesis of High Purity Gallium Nitride Powders and Growth and Characterization of Aluminum Nitride and Gallium Nitride Bulk Single Crystals PDF Download
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Author: Cengiz Mustafa Balkas
Publisher:
ISBN:
Category :
Languages : en
Pages : 262
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Author: Cengiz Mustafa Balkas
Publisher:
ISBN:
Category :
Languages : en
Pages : 262
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Author: Huaqiang Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 872
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
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This project has been primarily concerned with investigating a new approach to the synthesis of epitaxial layers of high purity gallium nitride. The new approach involves the use of hydrazoic acid, HN3, a previously untried precursor as the source of active nitrogen. A new, all-stainless steel apparatus which is UHV compatible, has been constructed. It has been designed to allow growth studies to be made by the chemical beam epitaxy (CBE) technique or by low pressure metal organic vapour phase deposition (LPMOCVD) at pressures up to ca. 1mbar. During the grant period the apparatus has been constructed, tested and modified. Experiments have been carried out which show that gallium nitride and aluminium nitride can be made from the reaction of hydrazoic acid with trimethyl gallium and trimethyl aluminium respectively, at a hot substrate surface. In- situ RHEED patterns and ex-situ Auger spectra and X-ray diffraction data have been obtained. Systematic studies aimed at producing high quality single crystal films have been made. The results are promising and uniform, golden yellow films of gallium nitride can now be produced. RHEED data show that the films are composed of highly orientated crystals. The X-ray results support this, with crystal sizes being at least 1000A with the crystals strongly orientated along the c-axis.
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2002
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Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572
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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 656
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Author: P. Phanikumar Konkapaka
Publisher:
ISBN: 9780542350719
Category :
Languages : en
Pages : 131
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It was found that kinetics of decomposition of pure GaN powder without oxygen resulted in incongruent evaporation leading to the formation of the liquid gallium in the powder. A flow through configuration was also used because of its high collection efficiency of growth species. A mixture of Ga 2O3 and carbon powder as well as commercial GaN powder was used as precursors of gallium suboxide in this configuration. This configuration also demonstrated growth rates that are comparable to flow over configuration.
Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000
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Author:
Publisher:
ISBN:
Category :
Languages : pt-BR
Pages :
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O nitreto de gálio (GaN) é um dos mais interessantes e promissores materiais para aplicação em dispositivos óptico-eletrônicos. GaN pode ser usado para a fabricação de diodos e lasers azuis. O desenvolvimento deste tipo de material está relacionado com três campos principais: 1) deposição de camadas de GaN cristalino; 2) produção de nano-filamentos a partir de reações confinadas no interiorde nanotubos de carbono; 3) síntese de GaN em pó por diferentes métodos químicos. Recentemente, novas técnicas de deposição adotaram a sublimação de pós de GaN como fonte de gálio para a produção de nanofilamentos de GaN, filmesfinos ou cristais. Estes métodos de sublimação mostram a necessidade do emprego de pós de GaN. No presente trabalho, é apresentada uma nova rota para a produção de pós de GaN a partir da reação gás-sólido entre Ga2O3 e NH3(g)utilizando o carbono como agente redutor no interior de um novo tipo de reator, disposto verticalmente. A partir desta rota obteve-se pós de GaN com conversões aproximadamente de 100% e com estrutura cristalina hexagonal. A quantidade deGaN obtida variou de acordo com os parâmetros experimentais adotados. Através de uma análise estatística foi possível determinar a influência da temperatura, razão molar de carbono/Ga2O3 e do tempo experimental sobre a taxa de produção de GaN.
