Author: Xiaohong JiangPublisher:
ISBN:
Category :
Languages : en
Pages : 212
Book Description
Synthesis and Characterization of Ferroelectric SrBi2Ta2O9 Thin Film Using Pulsed Laser Ablation
Author: Xiaohong JiangPublisher:
ISBN:
Category :
Languages : en
Pages : 212
Book Description
Formation and Characterization of Ferroelectric Thin-films Deposited by Pulsed-laser Ablation
Author: Christopher ScarfonePublisher:
ISBN:
Category :
Languages : en
Pages : 208
Book Description
Synthesis and Properties of Ferroelectric Oxide Thin Films Grown by Pulsed Laser Deposition for Nonlinear Optical Waveguide Application
Author: Jong-Souk YeoPublisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 190
Book Description
Ferroelectric Thin Films Prepared by Pulsed Laser Deposition Processing and Characterization
Author: L. P. CookPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Synthesis, Deposition and Characterization of Ferroelectric Films for Electrooptic Devices
Author: Bahadir TunaboyluPublisher:
ISBN:
Category :
Languages : en
Pages : 452
Book Description
Pulsed Excimer Laser Deposition of Ferroelectric Thin Films
Author: S. B. KrupanidhiPublisher:
ISBN:
Category :
Languages : en
Pages : 16
Book Description
Pulsed UV excimer laser ablation was employed to deposit multi-axial, bi-axial and uni-axial ferroelectric compositions of PZT, bismuth titanate and lead germanate respectively. In general, a fluence lower than 2 J/cm2 caused a preferential evaporation of volatile components, resulting in stoichiometric imbalance. However, the fluences beyond 2 J/cm2 enabled the deposition of stoichiometric thin films of multi-component oxide systems. The intrinsic bombardment due to the energetic ablated species during the thin film deposition seemed to influence the composition, structure, orientation and the electrical properties. The electrical characterization of ferroelectric films indicated a dielectric constant of 800-1000, a P, of 32 micron C/cm2 and E sub c of 130KV/cm for polycrystalline PZT films and the corresponding quantities were measured to be 150, 7 micron C/cm2 and 20 KV/cm for in-situ crystallized c-axis preferred oriented bismuth titanate films. Lead germanate thin films oriented along c-axis (OO3) showed a dielectric constant of 30, a P sub r of 2.5 micron C/cm2 and E sub c of 55 KV/cm.
Pulsed Laser Deposition Assisted Synthesis and Characterization of Titanium Dioxide Thin Films
Author: Jermaine Maurice BradleyPublisher:
ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 146
Book Description
Investigates the structural and mechanical properties of pulsed laser deposited (PLD) titania (TiO2) thin films. Uses nano-indentation to determine the mechanical properties of the films as a function of the growth parameters.
Synthesis and Characterization of Thin Films of NTHU-4, ZIF-8, Y2O3, TiSi2 and TiO2 Nanotubes Assisted by Pulsed Laser Deposition
Author: Jose Antonio Losilla YamasakiPublisher:
ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 220
Book Description
JJAP
Author: Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 410
Book Description
Microstructural and Electrical Characterization of Barium Strontium Titanate-Based Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition
Author: Costas G. FountzoulasPublisher:
ISBN:
Category :
Languages : en
Pages : 6
Book Description
Ferroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba(0.6)Sr(0.4)Ti(1-y)(A(3+), B(5+))(y)O3 thin films, of nominal thickness of 0.65 micrometer, were synthesized initially at substrate temperatures of 400 deg C, and subsequently annealed to 750 deg C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the post-annealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.
