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Languages : en
Pages : 53
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Author:
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Category :
Languages : en
Pages : 53
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Languages : en
Pages : 0
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Category : Electroluminescent devices
Languages : en
Pages : 872
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Author: Hock Min Ng
Publisher:
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Category : Technology & Engineering
Languages : en
Pages : 872
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Fall Meeting Symposium C.
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Category : Compound semiconductors
Languages : en
Pages : 0
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Languages : en
Pages : 0
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This proceedings volume is the permanent record of the Materials Research Society symposium entitled "GaN and Related Alloys," held November 30-December 4, 1998, at the MRS Fall Meeting in Boston, Massachusetts. The symposium covered the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high- density information storage, white lighting for indoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and for covert undersea communications. The symposium contained a plenary session with talks on laser diodes, electronic devices, substrates, etching, contacts, and piezoelectric and pyroelectric properties. This was followed by sessions on laser diodes and spectroscopy; conventional growth and characterization; epitaxial lateral overgrowth and selective growth; theory, defects, transport, and bandstructure; surfaces, theory, and processing; LEDs, UV detectors, and optical properties; electronic devices and processing; quantum dots; novel growth, doping, and processing; and finally, rare-earth doping and optical emission.
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Languages : en
Pages : 53
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In Symposium L on GaN and Related Alloys, recent results on growth and characterization of III-nitride semiconductors and their application in optoelectronic and electronic devices were reported. Several advances were reported in nitride-based technology for visible and UV-light emitters. Researchers at the University of South Carolina presented results on LEDs operating at 250 nm, while NTT researchers presented 350-nm UV LEDs with maximum external efficiency of 1.4%; phosphor-coated red and white LEDs incorporating their UV LEDs were also described by NTT. Lumileds researchers discussed the performance of their latest Luxeon LEDs, which achieve external quantum efficiency of 25% and 10% at 450 nm and 530 nm, respectively. In addition, Lumileds presented a demonstration of backlighting using 34 Luxeon chips to create a full-color light source with color temperature up to 15,000 K.A number of notable results in the nitride materials characterization arena were presented, particularly with regard to defect structure and the behavior of Mg in p-doped GaN. Continued advances were also reported in the development of nitride-based electronic devices. New materials and device designs for nitride-based heterostructure FETs, targeted for rf power applications, were presented by several research groups. Included among these was a discussion of advances in the growth and fabrication of nitride electronic devices on Si substrates. Also reported were initial results on an AlGaAs-GaAs-GaN heternstructure biopolar transistor realized using a wafer fusion process for device fabrication.
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Category :
Languages : en
Pages : 0
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Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 900
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Book Description
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Author: Kiyoshi Takahashi
Publisher: Springer Science & Business Media
ISBN: 3540472355
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
