Structural and Electrical Properties of Biaxially Textured YBa[sub 2]Cu[sub 3]O[sub 7-x] Thin Films on Buffered Ni-based Alloy Substrates PDF Download
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Languages : en
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Oxide high-T[sub c] superconducting wires and tapes with high critical current density (J[sub c]) are essential in future electrical power applications. Recently, YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] (YBCO) thin films grown on Ni-based alloy tapes have attracted intense interest because of their promise for these applications. In order to achieve high J[sub c], buffer layers are necessary for fabricating biaxially aligned YBCO thin films. In our studies, yttria-stabilized zirconia (YSZ) layers were deposited on Ni-based alloy substrate by ion-beam assisted deposition, and CeO[sub 2] buffer layers were subsequently deposited on the YSZ layer by pulsed laser deposition (PLD) or electron beam evaporation. In addition, MgO layers were deposited on Ni-based alloy substrates by inclined substrate deposition. Finally, biaxially textured YBCO thin films were deposited on these buffered metallic substrates by PLD under optimized conditions. The orientation and in-plane textures of YBCO and the buffer layers were characterized by X-ray diffraction[Theta]/2[Theta] scan, [phi]-scan, and pole figure analysis. The superconductive transition features were examined by measuring inductive T[sub c] and transport J[sub c].
![Structural and Electrical Properties of Biaxially Textured YBa[sub 2]Cu[sub 3]O[sub 7-x] Thin Films on Buffered Ni-based Alloy Substrates PDF](https://books.google.com/books/content/images/frontcover/CpGcDAEACAAJ?fife=w80-h100)
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Languages : en
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Oxide high-T[sub c] superconducting wires and tapes with high critical current density (J[sub c]) are essential in future electrical power applications. Recently, YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] (YBCO) thin films grown on Ni-based alloy tapes have attracted intense interest because of their promise for these applications. In order to achieve high J[sub c], buffer layers are necessary for fabricating biaxially aligned YBCO thin films. In our studies, yttria-stabilized zirconia (YSZ) layers were deposited on Ni-based alloy substrate by ion-beam assisted deposition, and CeO[sub 2] buffer layers were subsequently deposited on the YSZ layer by pulsed laser deposition (PLD) or electron beam evaporation. In addition, MgO layers were deposited on Ni-based alloy substrates by inclined substrate deposition. Finally, biaxially textured YBCO thin films were deposited on these buffered metallic substrates by PLD under optimized conditions. The orientation and in-plane textures of YBCO and the buffer layers were characterized by X-ray diffraction[Theta]/2[Theta] scan, [phi]-scan, and pole figure analysis. The superconductive transition features were examined by measuring inductive T[sub c] and transport J[sub c].
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Languages : en
Pages : 15
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Oxide high-T{sub c} superconducting wires and tapes with high critical current density (J{sub c}) are essential in future electrical power applications. Recently, YBa2Cu3O{sub 7-x} (YBCO) thin films grown on Ni-based alloy tapes have attracted intense interest because of their promise for these applications. In order to achieve high J{sub c}, buffer layers are necessary for fabricating biaxially aligned YBCO thin films. In our studies, yttria-stabilized zirconia (YSZ) layers were deposited on Ni-based alloy substrate by ion-beam assisted deposition, and CeO2 buffer layers were subsequently deposited on the YSZ layer by pulsed laser deposition (PLD) or electron beam evaporation. In addition, MgO layers were deposited on Ni-based alloy substrates by inclined substrate deposition. Finally, biaxially textured YBCO thin films were deposited on these buffered metallic substrates by PLD under optimized conditions. The orientation and in-plane textures of YBCO and the buffer layers were characterized by X-ray diffraction [Theta]/2[Theta] scan, [phi]-scan, and pole figure analysis. The superconductive transition features were examined by measuring inductive T{sub c} and transport J{sub c}.
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Languages : en
Pages : 9
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Thin films of the shape memory alloy NiTi have been sputter-deposited onto p-type silicon substrates. Films that are initially amorphous may be crystallized by vacuum annealing. The crystalline films exhibit the B2->B19' phase change associated with the shape memory effect while remaining in contact with the silicon substrate. Transition temperatures were determined by resistance measurements and x-ray diffraction. The NiTi-Si contacts are diodes, as evidenced by their current-voltage characteristics; however, the effect of the phase change on the barrier height could not be determined.
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Languages : en
Pages : 7
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High current YBa2Cu3O{sub 7-{delta}} (YBCO) thick films on flexible nickel substrates with textured buffer layers were deposited by using ion beam assisted deposition (IBAD). Pulsed laser deposited YBCO films were not only c-axis oriented with respect to the film surface but also strongly in-plane textured. The in-plane mosaic spread of YBCO films was (approximately) 10°. A critical current density of 8x105 A/cm2 was obtained at 75 K and zero field for thin YBCO films. It was also demonstrated that thick YBCO films with a high critical current and excellent magnetic field dependence at liquid nitrogen temperature can be obtained on flexible nickel substrates by using the textured buffer layers. Issues encountered in producing the films were discussed.
Author: Andrew Edward Manzi
Publisher:
ISBN:
Category :
Languages : en
Pages : 356
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Author: Polin Patty Tung Dubois
Publisher: 1974 [c1975]
ISBN:
Category :
Languages : en
Pages : 114
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![Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers PDF](https://books.google.com/books/content/images/frontcover/D4BcAQAACAAJ?fife=w80-h100)
Author: Engang Fu
Publisher: Open Dissertation Press
ISBN: 9781374667174
Category :
Languages : en
Pages :
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This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
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Category :
Languages : en
Pages :
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Author: Nagarajan Valanoor
Publisher:
ISBN:
Category : Ferroelectric thin films
Languages : en
Pages : 246
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Author: Milton Anthony Meininger
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 141
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