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Author: Xun Li
Publisher: Cambridge University Press
ISBN: 0521875102
Category : Technology & Engineering
Languages : en
Pages : 375
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Book Description
Get hands-on experience of optoelectronic device design and simulation using numerical methods.
Author: Xun Li
Publisher: Cambridge University Press
ISBN: 0521875102
Category : Technology & Engineering
Languages : en
Pages : 375
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Book Description
Get hands-on experience of optoelectronic device design and simulation using numerical methods.
Author: José Carlos Pedro
Publisher: Cambridge University Press
ISBN: 1107140595
Category : Technology & Engineering
Languages : en
Pages : 361
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Book Description
A practical, tutorial guide to the nonlinear methods and techniques needed to design real-world microwave circuits.
Author: Andreas Schenk
Publisher: Springer Science & Business Media
ISBN: 9783211830529
Category : Technology & Engineering
Languages : en
Pages : 384
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Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Author: Mark Lundstrom
Publisher: Springer Science & Business Media
ISBN: 0387280030
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Author: Shubham Sahay
Publisher: John Wiley & Sons
ISBN: 1119523532
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309
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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Bartlomiej F. Romanowicz
Publisher: Springer Science & Business Media
ISBN: 9780792383062
Category : Technology & Engineering
Languages : en
Pages : 178
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Book Description
Over the past two decades, technologies for microsystems fabrication have made considerable progress. This has made possible a large variety of new commercial devices ranging, for example, from integrated pressure and acceleration microsensors to active micromirror arrays for image projection. In the near future, there will be a number of new devices, which will be commercialized in many application areas. The field of microsystems is characterized by its wide diversity, which requires a multidisciplinary approach for design and processes as well as in application areas. Although there is a common technological background derived from integrated circuits, it is clear that microsystems will require additional application-specific technologies. Since most microsystem technologies are based on batch processing and dedicated to mass production, prototyping is likely to be an expensive and time-consuming step. It is recognized that standardization of the processes as well as of the design tools will definitely help reduce the entry cost of microsystems. This creates a very challenging situation for the design, modeling and simulation of microsystems. Methodology for the Modeling and Simulation of Microsystems is the first book to give an overview of the problems associated with modeling and simulation of microsystems. It introduces a new methodology, which is supported by several examples. It should provide a useful starting point for both scientists and engineers seeking background information for efficient design of microsystems.
Author: Joachim Piprek
Publisher: John Wiley & Sons
ISBN: 3527406670
Category : Technology & Engineering
Languages : en
Pages : 521
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Book Description
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670212
Category : Science
Languages : en
Pages : 414
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
