Semiconductor-on-Insulator and Thin Film Transistor Technology: Volume 53 PDF Download
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Author: A. Chiang
Publisher: Cambridge University Press
ISBN: 9780931837180
Category : Technology & Engineering
Languages : en
Pages : 494
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book was first published in 2006.
Author: A. Chiang
Publisher: Cambridge University Press
ISBN: 9780931837180
Category : Technology & Engineering
Languages : en
Pages : 494
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book was first published in 2006.
Author: A. Chiang
Publisher:
ISBN:
Category :
Languages : en
Pages : 493
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Book Description
The papers in this book have been arranged into five parts. The first three parts, 'Zone Melting and Recrystallization' 'Heteroepitaxy and Porous Silicon', and 'Buried Oxide and Nitride by Implantation' deal with specific approaches for fabricating Semiconductor on Insulator (SOL) material and structures. The last two parts, 'Characterization of SOL Thin Films' and 'Device and Circuit Applications', are more general in scope. Keywords: Symposia; Silicon; Oxides; Nitrides; Semiconductors; Insulators; Thin Film Transistors; Zone Melting; Recrystallization.
Author: A. Chiang
Publisher: Cambridge University Press
ISBN: 9781107405738
Category : Technology & Engineering
Languages : en
Pages : 494
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book was first published in 2006.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 1475726112
Category : Technology & Engineering
Languages : en
Pages : 277
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Book Description
Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI device processing, the physics of the SOI MOSFET as well as that of SOI other devices, and the performances of SOI circuits are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition is recommended for use as a textbook for classes on semiconductor device processing and physics. The level of the book is appropriate for teaching at both the undergraduate and graduate levels. Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition includes the new materials, devices, and circuit concepts which have been devised since the publication of the first edition. The circuit sections, in particular, have been updated to present the performances of SOI devices for low-voltage, low-power applications, as well as for high-temperature, smart-power, and DRAM applications. The other sections, such as those describing SOI materials, the physics of the SOI MOSFET and other devices have been updated to present the state of the art in SOI technology.
Author: Yue Kuo
Publisher: The Electrochemical Society
ISBN: 9781566774581
Category : Technology & Engineering
Languages : en
Pages : 340
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Book Description
Author: Yue Kuo
Publisher: The Electrochemical Society
ISBN: 1566775086
Category : Thin film transistors
Languages : en
Pages : 384
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Book Description
This issue includes funadmental and applied topics on materials, processes, devices, circuits, and new and novel applicaitons related to TFTs.
Author: Andrew C. Tickle
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 170
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Book Description
Author: S.D. Brotherton
Publisher: Springer Science & Business Media
ISBN: 3319000020
Category : Technology & Engineering
Languages : en
Pages : 467
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Book Description
Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Author: Yue Kuo
Publisher: The Electrochemical Society
ISBN: 9781566770941
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
Author: Yue Kuo
Publisher: The Electrochemical Society
ISBN: 9781566772167
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
