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Author: E. Herbert Li
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Photography
Languages : en
Pages : 634
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Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Author: E. Herbert Li
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Photography
Languages : en
Pages : 634
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Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Author: Paul Harrison
Publisher: John Wiley & Sons
ISBN: 111996475X
Category : Science
Languages : en
Pages : 564
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Book Description
Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their own.
Author: Erik John Skogen
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Book Description
Author: J. T. Lie
Publisher: CRC Press
ISBN: 1482283344
Category : Science
Languages : en
Pages : 695
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Book Description
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566773362
Category : Technology & Engineering
Languages : en
Pages : 344
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Book Description
Author: S. Iraj Najafi
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Science
Languages : en
Pages : 548
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Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Author:
Publisher:
ISBN:
Category : Photonics
Languages : en
Pages : 676
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Book Description
Author: Terry Yuan-Fang Chen
Publisher:
ISBN:
Category : Photoelasticity
Languages : en
Pages : 620
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Book Description
Author: Francis T. S. Yu
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Computers
Languages : en
Pages : 668
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Book Description
SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.
Author: Xiaolan Sun
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Book Description
In this thesis, several aspects of GaAsSb/AlSb multiple quantum well (MQW) heterostructures have been studied. First, it was shown that the GaAsSb MQWs with a direct band gap near 1.5μm at room temperature could be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors, which can be applied to Vertical Cavity Surface Emitting Lasers (VCSELs). Secondly, an enhanced photoluminescence from GaAsSb MQWs was reported. The photoluminescence strength increased dramatically with arsenic fraction as conjectured. The peak photoluminescence from GaAs0.31Sb0.69 was 208 times larger than that from GaSb. Thirdly, the strong photoluminescence from GaAsSb MQWs and the direct nature of the band gap near 1.5μm at room temperature make the material favorable for intermixing studies. The samples were treated with ion implantation followed by rapid thermal annealing (RTA). A band gap blueshift as large as 198 nm was achieved with a modest ion dose and moderate annealing temperature. Photoluminescence strength for implanted samples generally increased with the annealing temperature. The energy blueshift was attributed to the interdiffusion of both the group III and group V sublattices. Finally, based on the interesting properties of GaAsSb MQWs, including the direct band gap near 1.5μm, strong photoluminescence, a wide range of wavelength (1300 - 1500 nm) due to ion implantation-induced quantum well intermixing (QWI), and subpicosecond spin relaxation reported by Hall et al, we proposed to explore the possibilities for ultra-fast optical switching by investigating spin dynamics in semiconductor optical amplifiers (SOAs) containing InGaAs and GaSb MQWs. For circularly polarized pump and probe waves, the numerical simulation on the modal indices showed that the difference between the effective refractive index of the TE and TM modes was quite large, on the order of 0.03, resulting in a significant phase mismatch in a traveling length larger than 28μm. Thus the FWM conversion efficiency was exceedingly small and the FWM mechanism in SOAs used for investigation of all-optical polarization switching was strongly limited.
