Second SEMATECH Workshop on Stress Management for 3D ICs Using Through Silicon Vias 2010 PDF Download
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Author:
Publisher:
ISBN: 9781617822414
Category : Strains and stresses
Languages : en
Pages : 176
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Book Description
Author:
Publisher:
ISBN: 9781617822414
Category : Strains and stresses
Languages : en
Pages : 176
Get Book Here
Book Description
Author:
Publisher:
ISBN: 9781617822407
Category : Strains and stresses
Languages : en
Pages : 203
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Book Description
Author: Ehrenfried Zschech
Publisher:
ISBN:
Category :
Languages : en
Pages : 175
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Book Description
Author: Ehrenfried Zschech
Publisher: American Institute of Physics
ISBN: 9780735409385
Category : Science
Languages : en
Pages : 0
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Book Description
Scientist and engineers as well as graduate students in the fields of This conference will be of interest to anyone involved in Physics, Electrical Engineering, Materials Science and Engineering, Reliability and Quality Management, both in industry and academia. One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in 3D IC integration. Stresses arising in 3D TSV interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration can lead to performance reduction, reliability-limiting degradation and failure of microelectronic products. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. Management of mechanical stress is one of the key enablers for the successful implementation of 3D-integrated circuits using through silicon vias (TSVs). The potential stress-related impact of the 3D integration process on the device characteristics must be understood and shared, and designers need a solution for managing stress. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in 3D IC integration. Modelling and simulation capabilities as well as materials characterization are demonstrated to evaluate the effect of stress on product performance.
Author: Banqiu Wu
Publisher: McGraw Hill Professional
ISBN: 007174195X
Category : Technology & Engineering
Languages : en
Pages : 544
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Book Description
The latest advances in three-dimensional integrated circuit stacking technology With a focus on industrial applications, 3D IC Stacking Technology offers comprehensive coverage of design, test, and fabrication processing methods for three-dimensional device integration. Each chapter in this authoritative guide is written by industry experts and details a separate fabrication step. Future industry applications and cutting-edge design potential are also discussed. This is an essential resource for semiconductor engineers and portable device designers. 3D IC Stacking Technology covers: High density through silicon stacking (TSS) technology Practical design ecosystem for heterogeneous 3D IC products Design automation and TCAD tool solutions for through silicon via (TSV)-based 3D IC stack Process integration for TSV manufacturing High-aspect-ratio silicon etch for TSV Dielectric deposition for TSV Barrier and seed deposition Copper electrodeposition for TSV Chemical mechanical polishing for TSV applications Temporary and permanent bonding Assembly and test aspects of TSV technology
Author: Aida Todri-Sanial
Publisher: CRC Press
ISBN: 1498710379
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.
Author: Tengfei Jiang
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
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Book Description
Copper (Cu) Through-silicon via (TSV) is a key enabling element that provides the vertical connection between stacked dies in three-dimensional (3D) integration. The thermal expansion mismatch between Cu and Si induces complex stresses in and around the TSV structures, which can degrade the performance and reliability of 3DICs and are key concerns for technology development. In this dissertation, the effects of Cu microstructure and processing conditions on the stress characteristics and reliability of the TSV structure are studied. First, the stress characteristics of Cu TSV structures are investigated using the substrate curvature method. The substrate curvature measurement was supplemented by microstructure and finite element analyses (FEA) to investigate the mechanisms for the linear and nonlinear stress-temperature behaviors observed for the TSV structure. Implications of the near surface stress on carrier mobility change and device keep-out zone (KOZ) are discussed. Second, via extrusion, an important yield and reliability issue for 3D integration, is analyzed. Synchrotron x-ray microdiffraction technique was introduced for direct measurements of local stress and material behaviors in and around the TSV. Local plasticity near the top of the via was observed which provided direct experimental evidence to support the plasticity mechanism of via extrusion. An analytical model and FEA were used to analyze via extrusion based on local plasticity. Next, the effect of Cu microstructure effect on the thermomechanical behaviors of TSVs is investigated. The contribution from grain boundary and interfacial diffusion on via extrusion and the relaxation mechanisms are discussed. Potential approaches to minimize via extrusion are proposed. Finally, the stress characteristics of 3D die stack structures are studied using synchrotron x-ray microdiffraction. High resolution stress mappings were performed and verified by finite element analysis (FEA). FEA was further developed to estimate the stress effect on device mobility changes and the warpage of the integrated structure.
Author: Vasilis F. Pavlidis
Publisher: Newnes
ISBN: 0124104843
Category : Technology & Engineering
Languages : en
Pages : 770
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Book Description
Three-Dimensional Integrated Circuit Design, Second Eition, expands the original with more than twice as much new content, adding the latest developments in circuit models, temperature considerations, power management, memory issues, and heterogeneous integration. 3-D IC experts Pavlidis, Savidis, and Friedman cover the full product development cycle throughout the book, emphasizing not only physical design, but also algorithms and system-level considerations to increase speed while conserving energy. A handy, comprehensive reference or a practical design guide, this book provides effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. Expanded with new chapters and updates throughout based on the latest research in 3-D integration: Manufacturing techniques for 3-D ICs with TSVs Electrical modeling and closed-form expressions of through silicon vias Substrate noise coupling in heterogeneous 3-D ICs Design of 3-D ICs with inductive links Synchronization in 3-D ICs Variation effects on 3-D ICs Correlation of WID variations for intra-tier buffers and wires Offers practical guidance on designing 3-D heterogeneous systems Provides power delivery of 3-D ICs Demonstrates the use of 3-D ICs within heterogeneous systems that include a variety of materials, devices, processors, GPU-CPU integration, and more Provides experimental case studies in power delivery, synchronization, and thermal characterization
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Author: Daniel Lu
Publisher: Springer
ISBN: 3319450980
Category : Technology & Engineering
Languages : en
Pages : 974
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Book Description
Significant progress has been made in advanced packaging in recent years. Several new packaging techniques have been developed and new packaging materials have been introduced. This book provides a comprehensive overview of the recent developments in this industry, particularly in the areas of microelectronics, optoelectronics, digital health, and bio-medical applications. The book discusses established techniques, as well as emerging technologies, in order to provide readers with the most up-to-date developments in advanced packaging.
