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Author: Saul T. Redd
Publisher:
ISBN: 9781536186819
Category :
Languages : en
Pages :
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Book Description
A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers.Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO.Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models.In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics.
Author: Saul T. Redd
Publisher:
ISBN: 9781536186819
Category :
Languages : en
Pages :
Get Book
Book Description
A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers.Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO.Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models.In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics.
Author: B.L. Sharma
Publisher: Springer Science & Business Media
ISBN: 146844655X
Category : Science
Languages : en
Pages : 379
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Book Description
The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Author: Elias Burstein
Publisher: Springer Science & Business Media
ISBN: 1468417525
Category : Science
Languages : en
Pages : 574
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Book Description
The aim of this volume is to provide advanced predoctoral students and young postdoctoral physicists with an opportunity to study the concepts of tunneling phenomena in solids and the theoretical and experimental techniques for their investigation. The contributions are primarily tutorial in nature, covering theoretical and experimental aspects of electron tunnel ing in semiconductors, metals, and superconductors, and atomic tunneling in solids. The work is based upon the lectures delivered at the Advanced Study Institute on "Tunneling Phenomena in Solids," held at the Danish A. E. C. Research Establishment, Riso, Denmark, June 19-30, 1967. Sponsored by the Danish Atomic Energy Commission, the Nordic Institute for Theoretical Physics (NORDITA), and the Science Affairs Division of NATO, with the cooperation of the University of Copenhagen, the Technical University of Denmark, Chalmers Institute of Technology, and the University of Penn sylvania, the lectures were presented by a distinguished panel of scientists who have made major contributions in the field. The relatively large number of lecturers was, in part, made possible by the close coordination of the Advanced Study Institute with the Second International Conference on Electron Tunneling in Solids, which was held at Riso on June 29, 30 and July 1, 1967, under the sponsorship of the U. S. Army Research Office Durham. We are indebted to I. Giaever, E. O. Kane, J. Rowell, and J. R. Schrieffer for advice and assistance in planning the lecture program of the Institute.
Author: E. H. Rhoderick
Publisher: Oxford University Press, USA
ISBN: 9780198593355
Category : Electric contacts
Languages : en
Pages : 252
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Book Description
This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Christoph Johannes Urban
Publisher: Forschungszentrum Jülich
ISBN: 389336644X
Category :
Languages : en
Pages : 169
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Book Description
Author: Lev I. Berger
Publisher: CRC Press
ISBN: 0429612125
Category : Science
Languages : en
Pages : 485
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Book Description
Semiconductor Materials presents physico-chemical, electronic, electrical, elastic, mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and ternary inorganic semiconductors and their solid solutions. It also discusses the properties of organic semiconductors. Descriptions are given of the most commonly used semiconductor devices-charge-coupled devices, field-effect transistors, unijunction transistors, thyristors, Zener and avalanche diodes, and photodiodes and lasers. The current trend of transitioning from silicon technology to gallium arsenide technology in field-effect-based electronic devices is a special feature that is also covered. More than 300 figures and 100 tables highlight discussions in the text, and more than 2,000 references guide you to further sources on specific topics. Semiconductor Materials is a relatively compact book containing vast information on semiconductor material properties. Readers can compare results of the property measurements that have been reported by different authors and critically compare the data using the reference information contained in the book. Engineers who design and improve semiconductor devices, researchers in physics and chemistry, and students of materials science and electronics will find this a valuable guide.
Author: Gabor A. Somorjai
Publisher: John Wiley & Sons
ISBN: 047050823X
Category : Science
Languages : en
Pages : 804
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Book Description
Now updated-the current state of development of modern surface science Since the publication of the first edition of this book, molecular surface chemistry and catalysis science have developed rapidly and expanded into fields where atomic scale and molecular information were previously not available. This revised edition of Introduction to Surface Chemistry and Catalysis reflects this increase of information in virtually every chapter. It emphasizes the modern concepts of surface chemistry and catalysis uncovered by breakthroughs in molecular-level studies of surfaces over the past three decades while serving as a reference source for data and concepts related to properties of surfaces and interfaces. The book opens with a brief history of the evolution of surface chemistry and reviews the nature of various surfaces and interfaces encountered in everyday life. New research in two crucial areas-nanomaterials and polymer and biopolymer interfaces-is emphasized, while important applications in tribology and catalysis, producing chemicals and fuels with high turnover and selectivity, are addressed. The basic concepts surrounding various properties of surfaces such as structure, thermodynamics, dynamics, electrical properties, and surface chemical bonds are presented. The techniques of atomic and molecular scale studies of surfaces are listed with references to up-to-date review papers. For advanced readers, this book covers recent developments in in-situ surface analysis such as high- pressure scanning tunneling microscopy, ambient pressure X-ray photoelectron spectroscopy, and sum frequency generation vibrational spectroscopy (SFG). Tables listing surface structures and data summarizing the kinetics of catalytic reactions over metal surfaces are also included. New to this edition: A discussion of new physical and chemical properties of nanoparticles Ways to utilize new surface science techniques to study properties of polymers, reaction intermediates, and mobility of atoms and molecules at surfaces Molecular-level studies on the origin of the selectivity for several catalytic reactions A microscopic understanding of mechanical properties of surfaces Updated tables of experimental data A new chapter on "soft" surfaces, polymers, and biointerfaces Introduction to Surface Chemistry and Catalysis serves as a textbook for undergraduate and graduate students taking advanced courses in physics, chemistry, engineering, and materials science, as well as researchers in surface science, catalysis science, and their applications.
Author:
Publisher:
ISBN:
Category : Photoelectricity
Languages : en
Pages : 500
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Book Description
Author: A. V. Narlikar
Publisher: Oxford University Press
ISBN: 0198738161
Category : Science
Languages : en
Pages : 641
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Book Description
This handbook is about a remarkable set of materials that are technically referred to as mesoscopic superconductors, which for all practical purposes are tiny or small in their dimensions, ranging from a few micrometers down to a nanometer. At this level of smallness, the superconducting properties are dramatically changed, showing the dominance of quantum effects. Ground breaking research studies of small superconductors have emerged, and in a world obsessed with miniaturization of electronic device technology, small superconductors acquire even greater relevance and timeliness for the development of exciting novel quantum devices. The chapters, contributed by noted researchers and frontrunners in the field from 15 countries, are presented in three parts, namely progress in basic studies, materials specific research, and advances in nanodevices. The contents of the handbook should be of immediate interest to advanced level university students and researchers particularly in physics, materials science, nanoscience and engineering departments. Various reviews and overviews appearing in the book should answer the queries and curiosities of non-specialists interested in nanoscale superconductivity. At the start, the book carries an extended introduction for readers new to the field. The book should also appeal to scientists and engineers from electronic industries interested in knowing the current status of the theory, manufacture, and future of mesoscopic superconductors. In doing so, this volume offers the opportunity to engage with cutting edge research in one of the most exciting fields of physics today and tomorrow.
