Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization
Author: Richard Haight
Publisher: World Scientific
ISBN: 9814322849
Category : Science
Languages : en
Pages : 346
Book Description
As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Publisher: World Scientific
ISBN: 9814322849
Category : Science
Languages : en
Pages : 346
Book Description
As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials
Author: Paula M. Vilarinho
Publisher: Springer Science & Business Media
ISBN: 1402030193
Category : Science
Languages : en
Pages : 503
Book Description
As the characteristic dimensions of electronic devices continue to shrink, the ability to characterize their electronic properties at the nanometer scale has come to be of outstanding importance. In this sense, Scanning Probe Microscopy (SPM) is becoming an indispensable tool, playing a key role in nanoscience and nanotechnology. SPM is opening new opportunities to measure semiconductor electronic properties with unprecedented spatial resolution. SPM is being successfully applied for nanoscale characterization of ferroelectric thin films. In the area of functional molecular materials it is being used as a probe to contact molecular structures in order to characterize their electrical properties, as a manipulator to assemble nanoparticles and nanotubes into simple devices, and as a tool to pattern molecular nanostructures. This book provides in-depth information on new and emerging applications of SPM to the field of materials science, namely in the areas of characterisation, device application and nanofabrication of functional materials. Starting with the general properties of functional materials the authors present an updated overview of the fundamentals of Scanning Probe Techniques and the application of SPM techniques to the characterization of specified functional materials such as piezoelectric and ferroelectric and to the fabrication of some nano electronic devices. Its uniqueness is in the combination of the fundamental nanoscale research with the progress in fabrication of realistic nanodevices. By bringing together the contribution of leading researchers from the materials science and SPM communities, relevant information is conveyed that allows researchers to learn more about the actual developments in SPM applied to functional materials. This book will contribute to the continuous education and development in the field of nanotechnology.
Publisher: Springer Science & Business Media
ISBN: 1402030193
Category : Science
Languages : en
Pages : 503
Book Description
As the characteristic dimensions of electronic devices continue to shrink, the ability to characterize their electronic properties at the nanometer scale has come to be of outstanding importance. In this sense, Scanning Probe Microscopy (SPM) is becoming an indispensable tool, playing a key role in nanoscience and nanotechnology. SPM is opening new opportunities to measure semiconductor electronic properties with unprecedented spatial resolution. SPM is being successfully applied for nanoscale characterization of ferroelectric thin films. In the area of functional molecular materials it is being used as a probe to contact molecular structures in order to characterize their electrical properties, as a manipulator to assemble nanoparticles and nanotubes into simple devices, and as a tool to pattern molecular nanostructures. This book provides in-depth information on new and emerging applications of SPM to the field of materials science, namely in the areas of characterisation, device application and nanofabrication of functional materials. Starting with the general properties of functional materials the authors present an updated overview of the fundamentals of Scanning Probe Techniques and the application of SPM techniques to the characterization of specified functional materials such as piezoelectric and ferroelectric and to the fabrication of some nano electronic devices. Its uniqueness is in the combination of the fundamental nanoscale research with the progress in fabrication of realistic nanodevices. By bringing together the contribution of leading researchers from the materials science and SPM communities, relevant information is conveyed that allows researchers to learn more about the actual developments in SPM applied to functional materials. This book will contribute to the continuous education and development in the field of nanotechnology.
Semiconductor Nanostructures
Author: Dieter Bimberg
Publisher: Springer Science & Business Media
ISBN: 3540778993
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.
Publisher: Springer Science & Business Media
ISBN: 3540778993
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.
Roadmap of Scanning Probe Microscopy
Author: Seizo Morita
Publisher: Springer Science & Business Media
ISBN: 3540343156
Category : Technology & Engineering
Languages : en
Pages : 207
Book Description
Scanning tunneling microscopy has achieved remarkable progress and become the key technology for surface science. This book predicts the future development for all of scanning probe microscopy (SPM). Such forecasts may help to determine the course ultimately taken and may accelerate research and development on nanotechnology and nanoscience, as well as all in SPM-related fields in the future.
Publisher: Springer Science & Business Media
ISBN: 3540343156
Category : Technology & Engineering
Languages : en
Pages : 207
Book Description
Scanning tunneling microscopy has achieved remarkable progress and become the key technology for surface science. This book predicts the future development for all of scanning probe microscopy (SPM). Such forecasts may help to determine the course ultimately taken and may accelerate research and development on nanotechnology and nanoscience, as well as all in SPM-related fields in the future.
Proceedings of 16th World Nano Conference 2017
Author: ConferenceSeries
Publisher: ConferenceSeries
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 97
Book Description
June 05-06, 2017 Milan, Italy Key Topics : Nanoscience and Technology, Nano Medicine, Nano Electronics, Molecular Nanotechnology, Nano Toxicology, Nano Topography, Nano Fluidics, Nano Weapons, Nano Biotechnology, Nanotechnology in Water treatment, Nano Composites, Nanoscale, Advanced Nanomaterials, Nanotech for Energy and Environment, Nano Computational Modelling, Nano Materials Synthesis and Characterisation, Nanobiomaterials, Molecular Mimics, Nanotechnology Safety, Nanophotonics, Nanotechnology and Cosmetics, Nanotechnology in Tissue Engineering, Nanotechnology in Agriculture and Food Industry,
Publisher: ConferenceSeries
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 97
Book Description
June 05-06, 2017 Milan, Italy Key Topics : Nanoscience and Technology, Nano Medicine, Nano Electronics, Molecular Nanotechnology, Nano Toxicology, Nano Topography, Nano Fluidics, Nano Weapons, Nano Biotechnology, Nanotechnology in Water treatment, Nano Composites, Nanoscale, Advanced Nanomaterials, Nanotech for Energy and Environment, Nano Computational Modelling, Nano Materials Synthesis and Characterisation, Nanobiomaterials, Molecular Mimics, Nanotechnology Safety, Nanophotonics, Nanotechnology and Cosmetics, Nanotechnology in Tissue Engineering, Nanotechnology in Agriculture and Food Industry,
Microprobe Characterization of Optoelectronic Materials
Author: Juan Jimenez
Publisher: CRC Press
ISBN: 1040283829
Category : Technology & Engineering
Languages : en
Pages : 731
Book Description
Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.
Publisher: CRC Press
ISBN: 1040283829
Category : Technology & Engineering
Languages : en
Pages : 731
Book Description
Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.
Electronic Quantum Transport in Mesoscopic Semiconductor Structures
Author: Thomas Ihn
Publisher: Springer Science & Business Media
ISBN: 0387400966
Category : Science
Languages : en
Pages : 267
Book Description
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
Publisher: Springer Science & Business Media
ISBN: 0387400966
Category : Science
Languages : en
Pages : 267
Book Description
Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.
Characterization of Nanophase Materials
Author: Zhong Lin Wang
Publisher: Wiley-VCH
ISBN:
Category : Science
Languages : en
Pages : 444
Book Description
Engineering of nanophase materials and devices is of vital interest in electronics, semiconductors and optics, catalysis, ceramics and magnetism. Research associated with nanoparticles has widely spread and diffused into every field of scientific research, forming a trend of nanocrystal engineered materials. The unique properties of nanophase materials are entirely determined by their atomic scale structures, particularly the structures of interfaces and surfaces. Development of nanotechnology involves several steps, of which characterization of nanoparticles is indespensable to understand the behavior and properties of nanoparticles, aiming at implementing nanotechnolgy, controlling their behavior and designing new nanomaterials systems with super performance. The book will focus on structural and property characterization of nanocrystals and their assemblies, with an emphasis on basic physical approach, detailed techniques, data interpretation and applications. Intended readers of this comprehensive reference work are advanced graduate students and researchers in the field, who are specialized in materials chemistry, materials physics and materials science.
Publisher: Wiley-VCH
ISBN:
Category : Science
Languages : en
Pages : 444
Book Description
Engineering of nanophase materials and devices is of vital interest in electronics, semiconductors and optics, catalysis, ceramics and magnetism. Research associated with nanoparticles has widely spread and diffused into every field of scientific research, forming a trend of nanocrystal engineered materials. The unique properties of nanophase materials are entirely determined by their atomic scale structures, particularly the structures of interfaces and surfaces. Development of nanotechnology involves several steps, of which characterization of nanoparticles is indespensable to understand the behavior and properties of nanoparticles, aiming at implementing nanotechnolgy, controlling their behavior and designing new nanomaterials systems with super performance. The book will focus on structural and property characterization of nanocrystals and their assemblies, with an emphasis on basic physical approach, detailed techniques, data interpretation and applications. Intended readers of this comprehensive reference work are advanced graduate students and researchers in the field, who are specialized in materials chemistry, materials physics and materials science.
Coaxial-tip Piezoresistive Cantilever Probes for High-resolution Scanning Gate Microscopy
Author: Nahid Harjee
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 209
Book Description
Scanning probe techniques provide a wealth of information about the nanoscale properties of materials and devices. In scanning gate microscopy (SGM), the current through a sample is recorded as a sharp, conductive tip that modifies the local electrostatic potential is scanned above the surface. SGM has been used to map current flow, carrier density and potential barriers. Existing, unshielded SGM probes have significant stray capacitance, resulting in poor lateral resolution when they are used to image nanostructures. Thus, there is a need for a probe that minimizes stray capacitance to produce highly-localized electric fields. This probe must also self-sense topography for tip-sample alignment, as the conventional laser-based detection methods can disturb photosensitive samples. In this thesis, we present a new scanning probe that integrates a coaxial tip on a piezoresistive cantilever. The coaxial tip is comprised of a heavily-doped silicon inner conductor and an aluminum outer shield, separated by a silicon dioxide insulator. By shielding the inner conductor up to the tip apex, this tip configuration minimizes stray capacitance to produce narrow electrostatic potential profiles. A piezoresistor is embedded at the root of the cantilever and enables electrical measurement of deflection at the free end. Scanning gate microscopy is commonly performed at room temperature (room-T) and low temperature (low-T). We discuss the design of piezoresistive cantilevers for atomic force microscopy (AFM) under both temperature regimes. We introduce a numerical optimizer that we used to identify 12 cantilever designs for use at room-T and low-T for hard, semiconductor samples and soft, biological samples. We show the results of finite-element analysis used to predict the electrostatic potential profiles produced by unshielded and coaxial tips. We investigate how the full-width at half-maximum (FWHM) of the coaxial tip perturbation varies with lift height and tip geometry. We discuss the development of a 7-mask process to fabricate scanning probes with both a coaxial tip and a piezoresistor. We compare two methods to create sub-micron tip apertures with focused ion beam milling, and provide a recipe that can repeatably produce openings with a radius of 30 nm. We describe the characterization of the piezoresistive cantilevers at room-T on a commercial AFM and at low-T on a home-built cryogenic scanning system. Finally, we provide images of the potential profile from the coaxial tip, obtained using a quantum point contact at low-T. In a measurement bandwidth from 1 Hz to 10 kHz, our scanning probes achieve a vertical displacement resolution of 2.8 A at 293 K and 82 A at 2 K, where the low temperature performance is limited by amplifier noise. When the coaxial tip is 100 nm above a sample, the FWHM of the electrostatic potential profile it produces at the surface is less than 240 nm, representing a 2.3x improvement in the lateral resolution of SGM over unshielded tips.
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 209
Book Description
Scanning probe techniques provide a wealth of information about the nanoscale properties of materials and devices. In scanning gate microscopy (SGM), the current through a sample is recorded as a sharp, conductive tip that modifies the local electrostatic potential is scanned above the surface. SGM has been used to map current flow, carrier density and potential barriers. Existing, unshielded SGM probes have significant stray capacitance, resulting in poor lateral resolution when they are used to image nanostructures. Thus, there is a need for a probe that minimizes stray capacitance to produce highly-localized electric fields. This probe must also self-sense topography for tip-sample alignment, as the conventional laser-based detection methods can disturb photosensitive samples. In this thesis, we present a new scanning probe that integrates a coaxial tip on a piezoresistive cantilever. The coaxial tip is comprised of a heavily-doped silicon inner conductor and an aluminum outer shield, separated by a silicon dioxide insulator. By shielding the inner conductor up to the tip apex, this tip configuration minimizes stray capacitance to produce narrow electrostatic potential profiles. A piezoresistor is embedded at the root of the cantilever and enables electrical measurement of deflection at the free end. Scanning gate microscopy is commonly performed at room temperature (room-T) and low temperature (low-T). We discuss the design of piezoresistive cantilevers for atomic force microscopy (AFM) under both temperature regimes. We introduce a numerical optimizer that we used to identify 12 cantilever designs for use at room-T and low-T for hard, semiconductor samples and soft, biological samples. We show the results of finite-element analysis used to predict the electrostatic potential profiles produced by unshielded and coaxial tips. We investigate how the full-width at half-maximum (FWHM) of the coaxial tip perturbation varies with lift height and tip geometry. We discuss the development of a 7-mask process to fabricate scanning probes with both a coaxial tip and a piezoresistor. We compare two methods to create sub-micron tip apertures with focused ion beam milling, and provide a recipe that can repeatably produce openings with a radius of 30 nm. We describe the characterization of the piezoresistive cantilevers at room-T on a commercial AFM and at low-T on a home-built cryogenic scanning system. Finally, we provide images of the potential profile from the coaxial tip, obtained using a quantum point contact at low-T. In a measurement bandwidth from 1 Hz to 10 kHz, our scanning probes achieve a vertical displacement resolution of 2.8 A at 293 K and 82 A at 2 K, where the low temperature performance is limited by amplifier noise. When the coaxial tip is 100 nm above a sample, the FWHM of the electrostatic potential profile it produces at the surface is less than 240 nm, representing a 2.3x improvement in the lateral resolution of SGM over unshielded tips.