Relationships Between Ferroelectric 90[degree] Domain Formation and Electrical Properties of Chemically Prepared Pb(Zr, Ti)O[sub 3] Thin Films PDF Download
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For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90[degree] domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90[degree] domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90[degree] domains is severely limited. Thus, formation of these 90[degree] domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm[sup 2]) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm[sup 2]) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90[degree] domain relationships appear similar to those in the bulk. The effect of grain size on 90[degree] domain formation and electrical properties are discussed.
![Relationships Between Ferroelectric 90[degree] Domain Formation and Electrical Properties of Chemically Prepared Pb(Zr, Ti)O[sub 3] Thin Films PDF](https://books.google.com/books/content/images/frontcover/wjfhjwEACAAJ?fife=w80-h100)
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For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90[degree] domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90[degree] domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90[degree] domains is severely limited. Thus, formation of these 90[degree] domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm[sup 2]) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm[sup 2]) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90[degree] domain relationships appear similar to those in the bulk. The effect of grain size on 90[degree] domain formation and electrical properties are discussed.
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Languages : en
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Author:
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Languages : en
Pages : 20
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For PZT films deposited on Pt coated substrates, remanent polarization is a monotonic function of thermal expansion of the substrate, a result of 90° domain formation occurring as the film is cooled through the transformation temperature. PZT film stress in the vicinity of the Curie point controls 90° domain assemblages within the film. PZT films under tension at the transformation temperature area-domain oriented; whereas, films under compression at the transformation temperature are c-domain oriented. From XRD electrical switching of 90° domains is severely limited. Thus, formation of these 90° domains in vicinity of the Curie point is dominant in determination of PZT film dielectric properties. Chemically prepared PZT thin films with random crystallite orientation, but preferential a-domain orientation, have low remanent polarization (24 [mu]C/cm2) and high dielectric constant (1000). Conversely, PZT films of similar crystalline orientation, but of preferential c-domain orientation, have large remanent polarizations (37 [mu]C/cm2) and low dielectric constants (700). This is consistent with single-crystal properties of tetragonally distorted, simple perovksite ferroelectrics. Further, for our films that grain size - 90° domain relationships appear similar to those in the bulk. The effect of grain size on 90° domain formation and electrical properties are discussed.
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Alexander Tagantsev
Publisher: Springer Science & Business Media
ISBN: 1441914226
Category : Science
Languages : en
Pages : 828
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Book Description
At present, the marketplace for professionals, researchers, and graduate students in solid-state physics and materials science lacks a book that presents a comprehensive discussion of ferroelectrics and related materials in a form that is suitable for experimentalists and engineers. This book proposes to present a wide coverage of domain-related issues concerning these materials. This coverage includes selected theoretical topics (which are covered in the existing literature) in addition to a plethora of experimental data which occupies over half of the book. The book presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observations of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. "Domains in Ferroic Crystals and Thin Films" covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In other textbooks on solid state physics, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In contrast, "Domains in Ferroic Crystals and Thin Films" concentrates on domain-related phenomena in nonmagnetic ferroics. These materials are still inadequately represented in solid state physics textbooks and monographs.
Author: R. Ramesh
Publisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
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Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Author: Tony Schenk
Publisher: BoD – Books on Demand
ISBN: 3743127296
Category : Technology & Engineering
Languages : en
Pages : 194
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Book Description
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Author: A. S. Sidorkin
Publisher: Cambridge Int Science Publishing
ISBN: 1904602142
Category : Mathematics
Languages : en
Pages : 247
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Book Description
The book examines domain structuring due to the loss of the initial phase stability in materials of finite size. It also covers aspects such as the behaviour of domain boundaries during their interaction with lattice defects, their structure in real ferroelectrically ordered materials, the effect of the lattice potential relief on their movement, and the flexural and translational components of their dynamics in ferroelectric crystals. The contribution of the domain boundaries to the dielectric properties of ferroelectrics and elastic properties of ferroelectric elastomers is evaluated.
Author: Seshu B. Desu
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 456
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
