Recent Developments in Thin Film Research: Epitaxial Growth and Nanostructures, Electron Microscopy and X-Ray Diffraction PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Recent Developments in Thin Film Research: Epitaxial Growth and Nanostructures, Electron Microscopy and X-Ray Diffraction PDF full book. Access full book title Recent Developments in Thin Film Research: Epitaxial Growth and Nanostructures, Electron Microscopy and X-Ray Diffraction by G. Ritter. Download full books in PDF and EPUB format.
Author: G. Ritter
Publisher: Elsevier Science
ISBN: 9780444205131
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book Here
Book Description
The ICAM'97 symposium on "Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures" was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997. . More than 60 participants representing 10 countries met to discuss the recent developments related to the study of crystalline structure of thin films: first stages of growth, morphology, strains and their relaxation. The aim of this symposium was to discuss the applications of both electron microscopy and X-ray diffraction in thin film studies. X-ray diffraction is a non-destructive method giving very accurate information in reciprocal space for the determination of crystalline data. Many of the contributions were concerned with following such growth processes such as epitaxy of metals and semiconducting materials, measuring the average strain and the structure and the morphology of the films. The electron microscopy investigations allow the study of microstructures and crystalline defects. The main handicap is the necessity for the destruction of the specimens. Electron microscopy is useful for studying the randomly distributed failures in periodicity of crystalline structures.
Author: G. Ritter
Publisher: Elsevier Science
ISBN: 9780444205131
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book Here
Book Description
The ICAM'97 symposium on "Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures" was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997. . More than 60 participants representing 10 countries met to discuss the recent developments related to the study of crystalline structure of thin films: first stages of growth, morphology, strains and their relaxation. The aim of this symposium was to discuss the applications of both electron microscopy and X-ray diffraction in thin film studies. X-ray diffraction is a non-destructive method giving very accurate information in reciprocal space for the determination of crystalline data. Many of the contributions were concerned with following such growth processes such as epitaxy of metals and semiconducting materials, measuring the average strain and the structure and the morphology of the films. The electron microscopy investigations allow the study of microstructures and crystalline defects. The main handicap is the necessity for the destruction of the specimens. Electron microscopy is useful for studying the randomly distributed failures in periodicity of crystalline structures.
Author: Ernst Bauer
Publisher: Springer
ISBN: 1493909355
Category : Technology & Engineering
Languages : en
Pages : 513
Get Book Here
Book Description
This book, written by a pioneer in surface physics and thin film research and the inventor of Low Energy Electron Microscopy (LEEM), Spin-Polarized Low Energy Electron Microscopy (SPLEEM) and Spectroscopic Photo Emission and Low Energy Electron Microscopy (SPELEEM), covers these and other techniques for the imaging of surfaces with low energy (slow) electrons. These techniques also include Photoemission Electron Microscopy (PEEM), X-ray Photoemission Electron Microscopy (XPEEM), and their combination with microdiffraction and microspectroscopy, all of which use cathode lenses and slow electrons. Of particular interest are the fundamentals and applications of LEEM, PEEM, and XPEEM because of their widespread use. Numerous illustrations illuminate the fundamental aspects of the electron optics, the experimental setup, and particularly the application results with these instruments. Surface Microscopy with Low Energy Electrons will give the reader a unified picture of the imaging, diffraction, and spectroscopy methods that are possible using low energy electron microscopes.
Author: J Matthews
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
Get Book Here
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Author: David G. Rickerby
Publisher: Springer Science & Business Media
ISBN: 9780792359395
Category : Science
Languages : en
Pages : 522
Get Book Here
Book Description
This book presents a coherent synopsis of a rapidly evolving field. Subjects covered include diffraction contrast and defect analysis by conventional TEM lattice imaging, phase contrast and resolution limits in high resolution electron microscopy. Specialised electron diffraction techniques are also covered, as is the application of parallel electron energy loss spectroscopy and scanning transmission EM for subnanometer analysis. Materials analyzed include thin films, interfaces and non-conventional materials. WDS and EDS are treated, with an emphasis on phi(rhoZeta) techniques for the analysis of thin layers and surface films. Theoretical and practical aspects of ESEM are discussed in relation to applications in crystal growth, biomaterials and polymers. Recent developments in SPM are also described. A comprehensive survey of the state of the art in electron and SPM, future research directions and prospective applications in materials engineering.
Author: Gertjan Koster
Publisher: Elsevier
ISBN: 0857094955
Category : Technology & Engineering
Languages : en
Pages : 295
Get Book Here
Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
Author: R.F.C. Farrow
Publisher: Springer Science & Business Media
ISBN: 1468491458
Category : Technology & Engineering
Languages : en
Pages : 548
Get Book Here
Book Description
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Author:
Publisher: Academic Press
ISBN: 0080542905
Category : Technology & Engineering
Languages : en
Pages : 331
Get Book Here
Book Description
Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 1402086156
Category : Technology & Engineering
Languages : en
Pages : 504
Get Book Here
Book Description
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author: Zexian Cao
Publisher: Elsevier
ISBN: 0857093290
Category : Technology & Engineering
Languages : en
Pages : 433
Get Book Here
Book Description
Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films. Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films. With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic. Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films Focusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin films An essential reference for engineers in electronics, energy materials and mechanical engineering
Author: Miroslav Kotrla
Publisher: Springer Science & Business Media
ISBN: 9781402006746
Category : Science
Languages : en
Pages : 624
Get Book Here
Book Description
Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
