Radiation damage and defects in semiconductors : proceedings of the international conference PDF Download
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Author: E. W. J. Mitchell
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Languages : en
Pages : 0
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Author: E. W. J. Mitchell
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: E.W.J. Mitchell
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Category :
Languages : en
Pages :
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Category :
Languages : en
Pages : 458
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Category :
Languages : en
Pages : 458
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Author: J. E. Whitehouse
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Languages : en
Pages : 468
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The report presents the proceedings of International Conference on Defects in Semiconductors, consisting of 54 articles showing recent research results on the production and properties of lattice defects in semiconductors. As in the previous meetings of this bi-annual series, emphasis was on electron and neutron damage in silicon, gallium arsenide and germanium, closely followed by ion implantation defect studies. Interest in the other III-V and II-VI compounds has increased. Reported use of special techniques includes electron microscopy, channeling, local vibrational modes, electron spin resonance and Mossbauer effect. (Author).
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Category :
Languages : en
Pages : 458
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Author: International Conferenceon the Physics of Semiconductors
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Category : Semiconductors
Languages : en
Pages : 426
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Category : Science
Languages : en
Pages : 480
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Languages : en
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Author: International Union of Pure and Applied Physics
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Category : Semiconductors
Languages : en
Pages :
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