Quantum Dot Gate Nonvolatile Memory PDF Download
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Author: Ravi Shankar R. Velampati
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: Ravi Shankar R. Velampati
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Hassen Abdu
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
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Book Description
Conventional Flash memory devices face a scaling issue that will impede memory scaling beyond the 50nm node: a reliability issue involving the tunneling oxide thickness and charge retention. A possible solution is to replace the continuous floating gate, where charge is stored, with a segmented charge storage film, so that leakage through defects in the tunneling oxide would be localized. We first explored using quantum dots as possible floating gate replacements. After conducting simulations, we established the need for the smallest possible segmented structures. This led us to the use of molecular films as floating gates in non-volatile flash memories. As an example, a single organic molecule of 3,4,9,10 -parylene tetracarboxylic dianhydride (PTCDA) occupies lnm2 in area and is capable of storing and retaining a single charge. If a defect is present in the tunneling oxide below the floating gate, only a few molecules of PTCDA would be affected due to poor lateral conduction between PTCDA molecules. We can, therefore, project that such molecular thin films of PTCDA are likely to meet demanding size and packing density requirements of advancing flash memory technology.
Author: Nathan Butterfield
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Fuad Al-Amoody
Publisher: LAP Lambert Academic Publishing
ISBN: 9783848448302
Category :
Languages : en
Pages : 128
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Book Description
This book presents devices which are fabricated using high energy gap ZnyCd1-ySe cladded ZnxCd1-xSe quantum dots (y>x). These QDs are pseudomorphic (nearly lattice-matched core and the shell of the dot)in nature which makes them have less stress and dislocation. The QD devices are unique as they utilize the pseudomorphic structure of these QDs. One of the devices mentioned in this book is a floating quantum dot gate nonvolatile memory where cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe). The cladded dots are grown using a novel improved methodology of photo-assisted microwave plasma metalorganic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The composition of quantum dot cladding, which relates to the value of y in ZnyCd1-ySe, is engineered by the intensity of ultraviolet light which controls the incorporation of zinc in ZnCdSe. The quantum dot quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots, as well as, two diverse types of devices are presented in this book. Also the fabrication of the QDs and the devices will be talked about in detail.
Author: Mukesh Gogna
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Author: Writam Banerjee
Publisher: CRC Press
ISBN: 1351203258
Category : Science
Languages : en
Pages : 453
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Book Description
In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.
Author: Mukesh Gogna
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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In this dissertation, the floating gate type quantum dot gate nonvolatile memory device has been investigated. The electrical characterization and simulation of the fabricated quantum dot nonvolatile memory (QD-NVM) devices is presented. The electrical characterization includes program, erase, and read operations and the memory retention and endurance measurements. In addition, QD synthesis and their incorporation as the floating gate (along with material characterization) is presented in fabricated QD-NVM devices. The synthesis of the germanium oxide cladding on the germanium quantum dots is one of the key interests in this research. Owing to the electrical and physical isolation of the quantum dots due to germanium oxide cladding, it provides a larger threshold voltage shift due to tight packing and higher density of quantum dots. GeOx cladding on the QDs enhances the data retention by avoiding the lateral dot-to-dot conduction, thereby reducing charge leakage. A threshold voltage of 1.5 V was observed in the first GeOx-Ge QD-NVM device when pulsed with a 20 Âμs stress pulse. The experimental data indicates that there is about a 0.1 V shift in the threshold voltage of that device over a period of one year. Similarly, 1.6 V of threshold voltage shift was observed in the second device and the retention data indicates negligible shift in the threshold voltage over a period of one year. Similar results were observed in the II-VI based QD-NVM devices.
Author: Supriya Karmakar
Publisher: Springer Science & Business Media
ISBN: 8132216350
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
Author: Writam Banerjee
Publisher: CRC Press
ISBN: 1040119107
Category : Technology & Engineering
Languages : en
Pages : 683
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Book Description
In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
Author: Faquir C Jain
Publisher: World Scientific
ISBN: 9811242836
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Published as part of the well-established book series, Selected Topics in Electronics and Systems, this compendium features 18 peer reviewed articles focusing on high-performance materials and emerging devices for implementation in high-speed electronic systems.Wide-ranging topics span from novel materials and devices, biosensors and bio-nano-systems, artificial intelligence, robotics and emerging technologies, to applications in each of these fields.Systems for implementing data with security tokens; single chemical sensor for multi-analyte mixture detection; RF energy harvesters; additively manufactured RF devices for 5G, IoT, RFID and smart city applications are also prominently included.Written by eminent researchers, recent developments also highlight equivalent circuits models at room temperature and 4.2 K; quantum dot nonvolatile memories, 3D-confined quantum dot channel (QDC) and spatial wavefunction switched (SWS) FETs for high-speed multi-bit logic and novel system applications.
