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Author: Korytov-M
Publisher: Omn.Univ.Europ.
ISBN: 9786131545009
Category : Literary Criticism
Languages : en
Pages : 196
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Book Description
The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measurements were elaborated. The experimental part of this work is dedicated to the characterization of GaN quantum dots (QDs) grown on AlGaN templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape depends on the GaN layer thickness, whereas the buried QD shape and volume are influenced by the QD capping. Moreover, a phase separation occurs in the AlGaN barriers. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are also proposed.
Author: Korytov-M
Publisher: Omn.Univ.Europ.
ISBN: 9786131545009
Category : Literary Criticism
Languages : en
Pages : 196
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Book Description
The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measurements were elaborated. The experimental part of this work is dedicated to the characterization of GaN quantum dots (QDs) grown on AlGaN templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape depends on the GaN layer thickness, whereas the buried QD shape and volume are influenced by the QD capping. Moreover, a phase separation occurs in the AlGaN barriers. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are also proposed.
Author: Maxim Korytov
Publisher:
ISBN:
Category :
Languages : en
Pages : 180
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Book Description
The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.
Author: Nicholas Matthews Boyall
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: M.O. Manasreh
Publisher: Elsevier
ISBN: 0080534449
Category : Science
Languages : en
Pages : 463
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Book Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author: Samantha Bennett
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Optoelectronic devices fabricated from nitride semiconductors include blue and green light emitting diodes (LEDs) and laser diodes (LDs). To design efficient devices, the structure and composition of the constituent materials must be well-characterised. Traditional microscopy techniques used to examine nitride semiconductors include transmission electron microscopy (TEM), and atomic force microscopy (AFM). This thesis describes the study of nitride semiconductor materials using these traditional methods, as well as atom probe tomography (APT), a technique more usually applied to metals that provides three-dimensional (3D) compositional information at the atomic scale. By using both APT and correlative microscopy techniques, a more complete understanding of the material can be gained, which can potentially lead to higher-efficiency, longer-lasting devices. Defects, such as threading dislocations (TDs), can harm device performance. An AFM-based technique was used to show that TDs affect the local electrical properties of nitride materials. To investigate any compositional changes around the TD, APT studies of TDs were attempted, and evidence for oxygen enrichment near the TD was observed. The dopant level in nitride devices also affects their optoelectronic properties, and the combination of APT and TEM was used to show that Mg dopants were preferentially incorporated into pyramidal inversion domains, with a Mg content two orders of magnitude above the background level. Much debate has been focused on the microstructural origin of charge carrier localisation in InGaN. Alloy inhomogeneities have often been suggested to provide this localisation, yet APT has revealed InGaN quantum wells to be a statistically random alloy. Electron beam irradiation in the TEM caused damage to the InGaN, however, and a statistically significant deviation from a random alloy distribution was then observed by APT. The alloy homogeneity of InAlN was also studied, and this alloy system provided a unique opportunity to study gallium implantation damage to the APT sample caused during sample preparation by the focused ion beam (FIB). The combination of APT with traditional microscopy techniques made it possible to achieve a thorough understanding of a wide variety of nitride semiconductor materials.
Author: Edward T. Yu
Publisher: CRC Press
ISBN: 1000723771
Category : Technology & Engineering
Languages : en
Pages : 718
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Book Description
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
Author: Ayse Erol
Publisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
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Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author: 張文明
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Hadis Morkoç
Publisher: Springer Science & Business Media
ISBN: 3642585620
Category : Technology & Engineering
Languages : en
Pages : 511
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Book Description
This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.
Author: Fabrizio Roccaforte
Publisher: John Wiley & Sons
ISBN: 3527825258
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
