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Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217760
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217760
Category : Technology & Engineering
Languages : en
Pages : 396
Get Book Here
Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 176
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Book Description
Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
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Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6ยท1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Author: T. C. McGill
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 450
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Book Description
Author: Bhupendra N Dev
Publisher: World Scientific
ISBN: 9814485217
Category : Technology & Engineering
Languages : en
Pages : 199
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Book Description
This book contains articles in several areas involving a dominant role of surfaces and interfaces. It is divided into four sections. The first section deals with theoretical and experimental aspects of the structure and morphology of clean surfaces and adsorbed layers on surfaces. The next section concerns growth on surfaces leading to semiconductor devices with quantum well, quantum wire and quantum dot structures; also deals with spin transport in 2DEG. Section 3 is on layered synthetic microstructures (LSMs). Analysis of interface roughness and layer composition of LSMs by X-ray techniques, fabrication of hard X-ray telescopes with LSMs, and diffusion across interfaces of LSMs are discussed here. The last section contains articles dealing with semiconductor surfaces exposed to ion beams and ion-irradiated semiconductor multilayers.
Author: Ping Jiang
Publisher: World Scientific
ISBN: 9814554065
Category :
Languages : en
Pages : 2151
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Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Author: Institute of Physics Conference
Publisher: CRC Press
ISBN: 1000157105
Category : Science
Languages : en
Pages : 1352
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Book Description
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1146
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Book Description
Author: Norman G. Einspruch
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 408
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Book Description
Author: M.S. Shur
Publisher: CRC Press
ISBN: 1000112314
Category : Science
Languages : en
Pages : 1087
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Book Description
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
