Author: Ying Fu
Publisher: Springer
ISBN: 1461551412
Category : Technology & Engineering
Languages : en
Pages : 271
Book Description
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Physical Models of Semiconductor Quantum Devices
Author: Ying Fu
Publisher: Springer
ISBN: 1461551412
Category : Technology & Engineering
Languages : en
Pages : 271
Book Description
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Publisher: Springer
ISBN: 1461551412
Category : Technology & Engineering
Languages : en
Pages : 271
Book Description
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Physical Models of Semiconductor Quantum Devices
Author: Ying Fu
Publisher: Springer Science & Business Media
ISBN: 9400771746
Category : Science
Languages : en
Pages : 416
Book Description
The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
Publisher: Springer Science & Business Media
ISBN: 9400771746
Category : Science
Languages : en
Pages : 416
Book Description
The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
Physical Models for Quantum Dots
Author: Jean-Pierre Leburton
Publisher: CRC Press
ISBN: 1000348199
Category : Technology & Engineering
Languages : en
Pages : 991
Book Description
Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.
Publisher: CRC Press
ISBN: 1000348199
Category : Technology & Engineering
Languages : en
Pages : 991
Book Description
Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.
Physical Models of Semiconductor Quantum Devices
Author: Ying Fu
Publisher: Springer
ISBN: 9781461551423
Category : Technology & Engineering
Languages : en
Pages : 263
Book Description
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Publisher: Springer
ISBN: 9781461551423
Category : Technology & Engineering
Languages : en
Pages : 263
Book Description
This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.
Physical Models for Quantum Wires, Nanotubes, and Nanoribbons
Author: Jean-Pierre Leburton
Publisher: CRC Press
ISBN: 100046119X
Category : Science
Languages : en
Pages : 570
Book Description
A compilation of articles that span more than 30 years of research on developing comprehensive physical models. Address the effect of quantum confinement on lattice vibrations, carriers scattering rates, and charge transport and present practical examples of solutions to the Boltzmann equation. Topics on quantum transport and spin effects in unidimensional molecular structures such as carbon nanotubes and graphene nanoribbons.
Publisher: CRC Press
ISBN: 100046119X
Category : Science
Languages : en
Pages : 570
Book Description
A compilation of articles that span more than 30 years of research on developing comprehensive physical models. Address the effect of quantum confinement on lattice vibrations, carriers scattering rates, and charge transport and present practical examples of solutions to the Boltzmann equation. Topics on quantum transport and spin effects in unidimensional molecular structures such as carbon nanotubes and graphene nanoribbons.
Advanced Physical Models for Silicon Device Simulation
Author: Andreas Schenk
Publisher: Springer Science & Business Media
ISBN: 9783211830529
Category : Technology & Engineering
Languages : en
Pages : 384
Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Publisher: Springer Science & Business Media
ISBN: 9783211830529
Category : Technology & Engineering
Languages : en
Pages : 384
Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Introduction to Semiconductor Device Modelling
Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Semiconductor Quantum Optics
Author: Mackillo Kira
Publisher: Cambridge University Press
ISBN: 1139502514
Category : Science
Languages : en
Pages : 658
Book Description
The emerging field of semiconductor quantum optics combines semiconductor physics and quantum optics, with the aim of developing quantum devices with unprecedented performance. In this book researchers and graduate students alike will reach a new level of understanding to begin conducting state-of-the-art investigations. The book combines theoretical methods from quantum optics and solid-state physics to give a consistent microscopic description of light-matter- and many-body-interaction effects in low-dimensional semiconductor nanostructures. It develops the systematic theory needed to treat semiconductor quantum-optical effects, such as strong light-matter coupling, light-matter entanglement, squeezing, as well as quantum-optical semiconductor spectroscopy. Detailed derivations of key equations help readers learn the techniques and nearly 300 exercises help test their understanding of the materials covered. The book is accompanied by a website hosted by the authors, containing further discussions on topical issues, latest trends and publications on the field. The link can be found at www.cambridge.org/9780521875097.
Publisher: Cambridge University Press
ISBN: 1139502514
Category : Science
Languages : en
Pages : 658
Book Description
The emerging field of semiconductor quantum optics combines semiconductor physics and quantum optics, with the aim of developing quantum devices with unprecedented performance. In this book researchers and graduate students alike will reach a new level of understanding to begin conducting state-of-the-art investigations. The book combines theoretical methods from quantum optics and solid-state physics to give a consistent microscopic description of light-matter- and many-body-interaction effects in low-dimensional semiconductor nanostructures. It develops the systematic theory needed to treat semiconductor quantum-optical effects, such as strong light-matter coupling, light-matter entanglement, squeezing, as well as quantum-optical semiconductor spectroscopy. Detailed derivations of key equations help readers learn the techniques and nearly 300 exercises help test their understanding of the materials covered. The book is accompanied by a website hosted by the authors, containing further discussions on topical issues, latest trends and publications on the field. The link can be found at www.cambridge.org/9780521875097.
Computational Electronics
Author: Dragica Vasileska
Publisher: CRC Press
ISBN: 1420064843
Category : Technology & Engineering
Languages : en
Pages : 782
Book Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Publisher: CRC Press
ISBN: 1420064843
Category : Technology & Engineering
Languages : en
Pages : 782
Book Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Physics of Semiconductor Devices
Author: Massimo Rudan
Publisher: Springer
ISBN: 1493911511
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
Publisher: Springer
ISBN: 1493911511
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.